Terahertz time-domain spectra of aromatic carboxylic acids incorporated in nano-sized pores of mesoporous silicate.

Terahertz time-domain spectroscopy (THz-TDS) is used to study the intra- and intermolecular vibrational modes of aromatic carboxylic acids, for example, o-phthalic acid, benzoic acid, and salicylic acid, which form either intra- or intermolecular hydrogen bond(s) in different ways. Incorporating the target molecules in nano-sized spaces in mesoporous silicate (SBA-16) is found to be effective for the separate detection of intramolecular hydrogen bonding modes and intermolecular modes. The results are supported by an analysis of the differences in the peak shifts, which depend on temperature, caused by the different nature of the THz absorption. Raman spectra revealed that incorporating the molecules in the nano-sized pores of SBA-16 slightly changes the molecular structures. In the future, THz-TDS using nanoporous materials will be used to analyze the intra- and intermolecular vibrational modes of molecules with larger hydrogen bonding networks such as proteins or DNA.     

meso-Alkyl-substituted meso-meso linked diporphyrins and meso-alkyl-substituted meso-meso, beta-beta, beta-beta triply linked diporphyrins

[reaction: see text] AgPF6-promoted oxidation of 5,10,15-trialkyl zinc(II) porphyrins led to formation of meso-meso linked diporphyrins, which were further oxidized with Sc(OTf)3 and DDQ to give meso-meso, beta-beta, beta-beta triply linked diporphyrins that exhibited a stronger aggregation propensity than corresponding meso-aryl diporphyrins.     

Reaction of poly(vinyl chloride) with magnesium and grignard reagents

Reaction of poly(vinyl chloride) with magnesium under various conditions was attempted, but poly(vinyl chloride) did not react with magnesium. The reactions of poly(vinyl chloride) with benzylmagnesium chloride and allylmagnesium chloride as Grignard reagents were carried out in tetrahydrofuran at reflux temperature. It was found that the chlorine atoms in the poly(vinyl chloride) were replaced by benzyl and allyl groups by the coupling reaction, and a small amount of Grignard reagent of poly(vinyl chloride) was formed by the magnesium–halogen exchange reaction. The extent of the substitution increased with increasing reaction time and concentration of the Grignard reagent.     

Core-level photoemission of the Si(1 1 1)– -Ag surface using synchrotron radiation

The evolution of Si 2p core-level photoemission during a structural conversion from the Si (1 1 1)– -Ag to the Si(1 1 1)– -Ag superstructures induced by Ag adatoms adsorption at 140 K was studied using synchrotron radiation. The component from the top-layer Si-trimer atoms on the former surface was found to split into two components in the latter surface. The result is discussed in terms of a relaxation in some of the Si trimers induced by Ag adatoms sitting on the nearby Ag triangles of the -Ag substrate. The intensity ratio between the split components is a key to exclude some structure models proposed so far for the phases.     

Infinitely many shape invariant discrete quantum mechanical systems and new exceptional orthogonal polynomials related to the Wilson and Askey–Wilson polynomials

Two sets of infinitely many exceptional orthogonal polynomials related to the Wilson and Askey–Wilson polynomials are presented. They are derived as the eigenfunctions of shape invariant and thus exactly solvable quantum mechanical Hamiltonians, which are deformations of those for the Wilson and Askey–Wilson polynomials in terms of a degree ?   (?=1,2,…$?=1,2,\dots$) eigenpolynomial. These polynomials are exceptional in the sense that they start from degree ??1$??1$ and thus not constrained by any generalisation of Bochner's theorem.     

Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surface

The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five () periodic bands have been observed in thicker films. Taking the () periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1×1) structure. Of the () periodic bands observed in thick films, four of them are well explained by the folding of the (1×1) bands into a () periodicity. Regarding the other band, the three () periodic bands would originate from the electronic states related to the inner Si layers that form a () structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.     

High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes

Green light-emitting diodes (LEDs) were fabricated employing a ZnCdSe/ZnSSe triple quantum-well (TQW) active region surrounded by ZnMgSSe cladding layers grown on an n-type (100) GaAs substrate by molecular beam epitaxy (MBE). A 3.5 mW pure green emission was observed for the surface-emitting LED device at a peak wavelength of 513.3 nm (2.415 eV) with a spectral half-width of 11.7 nm (55 meV) under a 20 mA (4.6 V) direct current at room temperature (25°C). These correspond to an external quantum efficiency of 7.2%, a power conversion efficiency of 3.8%, a luminous current efficiency of 66 lm/A, and a luminous efficiency of 14 lm/W.