Strain modification of AlGaN layers using swift heavy ions

Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×10¹² ions/cm². The samples used in this study are 50 nm Al_0.2Ga_0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E ^1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E ^1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.     

Incomplete fusion reactions: Analysis of excitation functions and recoil range distributions in 16O + 51V

Incomplete fusion reactions were investigated by measuring the excitation functions of nine evaporation residues in ¹⁶O + ⁵¹V reaction in the beam energy 4-6 MeV/amu, using the well-known recoil catcher technique and gamma-ray spectrometry. The experimental data were compared with that obtained from Monte Carlo simulation calculations using the PACE2 code. The results indicate the presence of incomplete fusion process in the production of two alpha emission products. This was further confirmed by the measurement of recoil range distribution of these isotopes at 96 MeV beam energy. Calculations of the average angular momentum associated with these products revealed the peripheral nature of these ICF reactions. Received: 20 June 2001 / Accepted: 11 September 2001     

Dielectric and optical properties of polymer-liquid crystal composite

Dielectric properties of polymer-liquid crystal mixture, having constituent polymer, poly-butyl methacrylate (PBMA) and liquid crystal, cholesteryl nonanoate, are reported as a function of frequency and temperature. The measurement has been done in a temperature range of 300-375 K and frequency range of 100 Hz-10 MHz. The dielectric permittivity and dielectric loss shows significant changes with the addition of polymer molecules in liquid crystal. The significant feature of composite formation is that the pure liquid crystal and polymer do not show dielectric relaxation in the frequency range covered, while the composite shows relaxation peak at a particular frequency. The optical transmittance of pure liquid crystal and composite has also been measured and compared.     

Conductivity and dielectric properties of sol–gel derived porous zirconia

The 8-mol percentage Y₂O₃-stabilized Porous Zirconia was prepared using sol–gel method. Zirconium oxalate gel was prepared by the addition of appropriate amount of oxalic acid solution into the 1 M aqueous solution of zirconium-oxy chloride. A cubic phase zirconia powder was obtained by calcination and milling of the zirconium oxalate gel. Crystallization temperature was found about 450 °C from the Differential thermal analysis. The phase analysis by X-ray diffraction shows the presence of cubic phase. Pellets sintered at 1,350 °C were highly porous, and the electrical conductivity was found with lower value due to the porosity, and the hardness was about 8.0 GPa. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006.