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31.
The data on the excitation functions of24Mg+28Si elastic and inelastic (2+ ?0+, 2+ ?2+, 4+ ?0+ and 4+ ?2+) scattering fromE c.m.=48.97 to 57.21 MeV have been subjected to a statistical analysis consisting of the calculations of deviation function, cross-correlation function, summed excitation function, cross-channel correlation coefficients, coherence widths, and the distribution of cross sections. Based on the outcome of the analysis resonant structures atE c.m.=49.23, 50.02, 50.51, 52.10, 52.53, 53.27 and 54.14 MeV have been confirmed and three new structures of the same nature have been identified atE c.m.=51.42, 54.88 and 55.60 MeV.  相似文献   
32.
The data on the excitation functions of20Ne(16O,12C)24Mg,20Ne(16O,12C)24Mg*(1.37, 2+),20Ne(16O,12C)24Mg*(4.12, 4++4.24, 2+) +20Ne(16O,12C*(4.44, 2+))24Mg,20Ne(16O,12C)24Mg*(6.01, 4++6.43, 0+),20Ne(16O,20Ne)16O,20Ne(16O,20Ne*(1.63, 2+))16O, and20Ne(16O,20Ne*(4.25, 4+))16O reactions atθ lab=13° fromE c.m.=22.8 to 38.6 MeV have been subjected to a statistical analysis comprising of the calculations of the distribution of cross sections, deviation functions, cross-correlation functions, summed excitation functions, cross-channel correlation coefficients and coherence widths. The analysis confirms the existence of nonstatistical structures atE c.m.=24.6, 27.8, 31.7 and 35.5 MeV, and identifies a new structure of the same nature atE c.m. =25.6 MeV.  相似文献   
33.
We develop a lattice mean field theory for ferromagnetic ordering in diluted magnetic semiconductors by taking into account the spatial fluctuations associated with random disorder in the magnetic impurity locations and the finite mean free path associated with low carrier mobilities. Assuming a carrier-mediated indirect RKKY exchange interaction among the magnetic impurities, we find substantial deviation from the extensively used continuum Zener model Weiss mean field predictions. Our theory allows accurate analytic predictions for Tc and provides simple explanations for a number of observed anomalies, including the non-Brillouin function magnetization curves, the suppressed low-temperature magnetization saturation, and the dependence of Tc on conductivity.  相似文献   
34.
35.
We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}.  相似文献   
36.
Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreement is obtained (for carrier density n>10(12) cm(-2)) with existing experimental data. The conductivity scales linearly with n/n(i) in the theory. We explain the experimentally observed asymmetry between electron and hole conductivities, and the high-density saturation of conductivity for the highest mobility samples. We argue that the experimentally observed saturation of conductivity at low density arises from the charged impurity induced inhomogeneity in the graphene carrier density which becomes severe for n less, similarn(i) approximately 10(12) cm(-2).  相似文献   
37.
We propose to use the recently predicted two-dimensional "weak-pairing" px + ipy superfluid state of fermionic cold atoms as a platform for topological quantum computation. In the core of a vortex, this state supports a zero-energy Majorana mode, which moves to finite energy in the corresponding topologically trivial "strong-pairing" state. By braiding vortices in the "weak-pairing" state, unitary quantum gates can be applied to the Hilbert space of Majorana zero modes. For readout of the topological qubits, we propose realistic schemes suitable for atomic superfluids.  相似文献   
38.
We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.  相似文献   
39.
We present an analysis of the xF3(x,Q2) structure function and Gross-Llewellyn Smith(GLS) sum rule taking into account the nuclear effects and higher twist correction. This analysis is based on the results presented in[N.M. Nath, et al., Indian J. Phys. 90 (2016) 117]. The corrections due to nuclear effects predicted in several earlier analysis are incorporated to our results of xF3(x,Q2) structure function and GLS sum rule for free nucleon, corrected upto next-next-to-leading order (NNLO) perturbative order and calculate the nuclear structure function as well as sum rule for nuclei. In addition, by means of a simple model we have extracted the higher twist contributions to the non-singlet structure function xF3(x,Q2) and GLS sum rule in NNLO perturbative orders and then incorporated them to our results. Our NNLO results along with nuclear effect and higher twist corrections are observed to be compatible with corresponding experimental data and other phenomenological analysis.  相似文献   
40.
R. Sarma 《Physics letters. A》2010,374(30):3076-3079
Within a simplified model, we explore how bound electron-hole pair (exciton) states and optical transitions between them are affected by the geometry of a helically shaped one-dimensional semiconductor. Among the illustrated geometrical effects are variable enhancement of the binding energy for different excitons and the appearance of new excitonic states with spatially separated electron and hole positioned on different turns of the helix.  相似文献   
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