On the ν-dimensional one-component classical plasma: The thermodynamic limit problem revisited

We prove theH-stability property and the existence of the thermodynamic limit of the free energy density of the two-dimensional, one-component classical plasma. We give lower and upper bounds on the free energy density in any dimensionv and draw some consequences.     

Changes in Objective Acoustic Measurements and Subjective Voice Complaints in Call Center Customer-Service Advisors During One Working Day

SUMMARY: The aim of this study was to investigate how different acoustic parameters, extracted both from speech pressure waveforms and glottal flows, can be used in measuring vocal loading in modern working environments and how these parameters reflect the possible changes in the vocal function during a working day. In addition, correlations between objective acoustic parameters and subjective voice symptoms were addressed. The subjects were 24 female and 8 male customer-service advisors, who mainly use telephone during their working hours. Speech samples were recorded from continuous speech four times during a working day and voice symptom questionnaires were completed simultaneously. Among the various objective parameters, only F0 resulted in a statistically significant increase for both genders. No correlations between the changes in objective and subjective parameters appeared. However, the results encourage researchers within the field of occupational voice use to apply versatile measurement techniques in studying occupational voice loading.     

Linear and nonlinear optical properties in a semiconductor quantum well under intense laser radiation: Effects of applied electromagnetic fields

In this work we are studying the intense laser effects on the electron-related linear and nonlinear optical properties in GaAs–Ga_1?xAl_xAs quantum wells under applied electric and magnetic fields. The calculated quantities include linear optical absorption coefficient and relative change of the refractive index, as well as their corresponding third-order nonlinear corrections. The nonlinear optical rectification and the second and third harmonic generation coefficients are also reported. The DC applied electric field is oriented along the hererostructure growth direction whereas the magnetic field is taken in-plane. The calculations make use of the density matrix formalism to express the different orders of the dielectric susceptibility. Additionally, the model includes the effective mass and parabolic band approximations. The intense laser effects upon the system enter through the Floquet method that modifies the confinement potential associated to the heterostructure. The results correspond to several configurations of the dimensions of the quantum well, the applied electric and magnetic fields, and the incident intense laser radiation. They suggest that the nonlinear optical absorption and optical rectification are nonmonotone functions of the dimensions of the heterostructure and of the external perturbations considered in this work.     

On totalization of the Kurzweil-Henstock integral in the multidimensional space

In this paper a full totalization is presented of the Kurzweil-Henstock integral in the multidimensional space. A residual function of the total Kurzweil-Henstock primitive is defined.     

Packing dimension and Ahlfors regularity of porous sets in metric spaces

Let X be a metric measure space with an s-regular measure μ. We prove that if A ì X{A\subset X} is r{\varrho} -porous, then dim_p(A) ￡ s-cr^s{{\rm {dim}_p}(A)\le s-c\varrho^s} where dim_p is the packing dimension and c is a positive constant which depends on s and the structure constants of μ. This is an analogue of a well known asymptotically sharp result in Euclidean spaces. We illustrate by an example that the corresponding result is not valid if μ is a doubling measure. However, in the doubling case we find a fixed N ì X{N\subset X} with μ(N) = 0 such that dim_p(A) ￡ dim_p(X)-c(log\tfrac1r)^-1r^t{{\rm {dim}_p}(A)\le{\rm {dim}_p}(X)-c(\log \tfrac1\varrho)^{-1}\varrho^t} for all r{\varrho} -porous sets A ì X\ N{A \subset X{\setminus} N} . Here c and t are constants which depend on the structure constant of μ. Finally, we characterize uniformly porous sets in complete s-regular metric spaces in terms of regular sets by verifying that A is uniformly porous if and only if there is t < s and a t-regular set F such that A ì F{A\subset F} .     

Cauchy’s residue theorem for a class of real valued functions

Let [a, b] be an interval in ℝ Rand let F be a real valued function defined at the endpoints of [a, b] and with a certain number of discontinuities within [a, b]. Assuming F to be differentiable on a set [a, b] | E to the derivative f, where E is a subset of [a, b] at whose points F can take values ±∞ or not be defined at all, we adopt the convention that F and f are equal to 0 at all points of E and show that KH-vt ∝ _a ^b f = F(b) − F(a), where KH-vt denotes the total value of the Kurzweil-Henstock integral. The paper ends with a few examples that illustrate the theory.     

Intersubband transitions in quantum wells under intense laser field

An intense laser field effect on the intersubband transitions in quantum wells is theoretically investigated within the framework of the effective-mass approximation. Results obtained show that intersubbband optical transitions and energy levels in quantum wells can be significantly modified and controlled by an intense laser field. PACS 71.55.Eq; 73.21.Fg; 78.67.De     

Growth of silicon thin film by LPE on porous silicon bilayers

The fabrication of solar cells based on the transfer of a thin silicon film on a foreign substrate is an attractive way to realise cheap and efficient photovoltaic devices. The aim of this work is to realise a thin mono-crystalline silicon film on a double porous silicon layer in order to detach and transfer it on mullite. The first step is the fabrication of a double porous silicon layer by electrochemical anodisation using two different current densities. The low current leads to a low porosity layer and during annealing, the recrystallisation of this layer allows epitaxial growth. The second current leads to a high porosity which permits the transfer on to a low cost substrate. Liquid Phase Epitaxy (LPE) performed with indium (or In+Ga) in the temperature range of 950–1050°C leads to almost homogeneous layers. Growth rate is about 0.35 μm min⁻¹. Crystallinity of the grown epilayer is similar on porous silicon and on single crystal silicon. In this paper, we focus on the realisation of porous silicon sacrificial layer and subsequent LPE growth. This revised version was published online in July 2006 with corrections to the Cover Date.