Characterization of best uniform coapproximation

This paper deals with Kolmogorov criterion for best uniform coapproximation and strongly unique best uniform coapproximation. Some relations between best uniform approximation and best uniform coapproximation are obtained. Some equalities and best uniform coapproximation are connected.     

Effect of bismuth on liquid-phase epitaxy (LPE) grown GaAs layer using Ga–As–Bi melt

GaAs epitaxial layers of high structural quality have been realised from Ga–As–Bi melt using liquid-phase epitaxy (LPE). LPE grown GaAs epitaxial layer using bismuth solvent on GaAs substrate has been found to be of good structural perfection as compared to layers using gallium solvent. The temperature-dependent PL spectra of GaAs layer, grown from Ga+Bi mixed solvent has shown that the use of bismuth does not change the band energy. ECV depth profile of heavily zinc-doped epitaxial layer shows uniform doping in the GaAs layer grown using gallium solvent as compared to the layer grown using bismuth solvent.     

Development and investigation of the flexible hydrogen sensor based on ZnO-decorated Sb2O3 nanobelts

Hydrogen is regarded as the next-gen fuel for vehicles to avoid the emission of toxic gases, which needs a continuous monitoring of the concentration level. In the design of the H₂ sensor, especially of flexible type, a sensing layer will be blended, which affects the sensing performance of the device. Based on this concern, the present investigation is carried out to understand the effect of the bending angle toward the sensing performance of bare and ZnO (n-type)-decorated Sb₂O₃ (p-type) nanobelt–based sensors for hydrogen gas. The sensing element was prepared by the thermal chemical vapor deposition followed by the drop-casting method. Furthermore, the role of the zinc precursor (molar concentration—1 M–3 M) on the preparation of ZnO-decorated Sb₂O₃ nanobelts was studied. Various techniques were used to confirm the formation of ZnO-decorated nanobelts such as X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDAX), and Fourier transform infrared spectroscopy (FTIR). From these analyses, 1 M concentration of the zinc precursor shows uniform distribution of nanoparticles over the surface of Sb₂O₃ nanobelts. However, agglomeration was observed when the concentration of the zinc precursor increases from 1 M to 3 M. Later, the prepared nanobelts were deposited on the OverHead Projector (OHP) sheet by the doctor blade method for sensing hydrogen gas at 100 °C at a concentration of 1000–3000 ppm. In addition to it, the effect of the substrate bending angle (0°, 45°, 60°, and 90°) was analyzed at a fixed concentration of H₂ gas (1000 ppm). From this study, it is clear that the highest sensing response was achieved for 1 M decorated nanobelts compared with bare as well as other concentrations because of uniform distribution of nanoparticles on the surface of nanobelts. Moreover, the prepared sample demonstrates better sensing performance with the bending of substrates, which suggests that the prepared sensor could be used for flexible electronic devices. The prepared nanobelts show a good H₂ gas–sensing response even with bending of the substrates. The work suggests that the prepared sensor is applicable for flexible electronic devices.     

Facile synthesis of lactones and dihydronaphthalenes from methyl 2-isobutenyl (or 2-isopentenyl)cinnamates as the common intermediates

We prepared three different types of compounds, two α-alkylidene-γ-butyrolactones and 3,4-dihydronaphthalene-2-carboxylic acid from methyl 2-isobutenylcinnamates or methyl 2-isopentenylcinnamates as the common intermediates, which were derived from the acetates of Baylis-Hillman adducts.     

Thermal decomposition kinetics of Co(II), Ni(II), Cu(II) and Zn(II) complexes of dihydrazinium ethylenediamine-tetraacetate

Hydrazinium ethylenediaminetetraacetatometalate complexes of the type, N₂H₅ [M(Hedta)·H₂O] were subjected to systematic TG/DTG analysis. The decomposition process consists of three stages. Kinetic parameters were evaluated for each of these stages using the Coats-Redfern equation.     

Exact solution of Marangoni convection in a binary fluid with throughflow and Soret effect

The onset of Marangoni convection in a non-reactive binary fluid layer in the presence of throughflow and Soret effect is determined. The bottom boundary of the fluid layer is assumed to be either conducting or insulating to temperature and solute concentration perturbations while the top boundary is free and insulating. The linear stability analysis is followed and an exact solution is obtained for the corresponding eigenvalue problem by assuming that stationary convection is exhibited at the neutral state. The contribution from the Soret effect is seen only when the throughflow is weak, but however for a wider range of upward throughflow when the bottom boundary is conducting. The instability gets advanced/delayed when the Soret parameter assumes negative/positive values. The results agree well with the existing results in the literature for some particular cases.     

Atom Michelson interferometer on a chip using a Bose-Einstein condensate

An atom Michelson interferometer is implemented on an "atom chip." The chip uses lithographically patterned conductors and external magnetic fields to produce and guide a Bose-Einstein condensate. Splitting, reflecting, and recombining of condensate atoms are achieved by a standing-wave light field having a wave vector aligned along the atom waveguide. A differential phase shift between the two arms of the interferometer is introduced by either a magnetic-field gradient or with an initial condensate velocity. Interference contrast is still observable at 20% with an atom propagation time of 10 ms.     

Probabilistic electron density distribution in CdTe at RT and 200K

The bonding between the atoms in the II‐VI compound semiconductors has always been a subject of rigorous research because of their tremendous applications in a variety of fields. The bonding and ionic character in CdTe at 300 and 200 K have been determined quantitatively as well as qualitatively using single crystal X‐ray data sets and MEM (Maximum Entropy Method) as the tool for the reconstruction of the electron densities distributed within the unit cell. The ab‐initio band calculation of the total and valence charge densities have been carried out theoretically by means of the local density approximation (LDA) method in support of the experimentally derived MEM maps. The difference density maps show fewer errors between the theoretical and experimental charge density and thus gives credence to the results accordingly. Along the bonding direction [111], the mid‐bond electron densities are found to be 0.233 e/ų and 0.284 e/ų at 300 K and 200 K at distances 1.4026 Å and 1.4036 Å respectively. The densities along [100] and [110] show an increase in the charge concentration at the bond at lower temperatures. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim