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151.
Some estimates of derivatives are sharpened for quasiconformal reflections of a special class of simply connected plane domains. Bibliography: 2 titles.  相似文献   
152.
153.
AC conductivity and dielectric studies on vanadium phosphate glasses doped with lithium have been carried out in the frequency range 0.2-100 kHz and temperature range 290-493 K. The frequency dependence of the conductivity at higher frequencies in glasses obeys a power relationship, σac=s. The obtained values of the power s lie in the range 0.5≤s≤1 for both undoped and doped with low lithium content which confirms the electron hopping between V4+ and V5+ ions. For doped glasses with high lithium content, the values of s≤0.5 which confirm the domination of ionic conductivity. The study of frequency dependence of both dielectric constant and dielectric loss showed a decrease with increasing frequency while they increase with increasing temperature. The results have been explained on the basis of frequency assistance of electron hopping besides the ionic polarization of the glasses. The bulk conductivity increases with increasing temperature whereas decreases with increasing lithium content which means a reduction of the V5+.  相似文献   
154.
A Dirac picture perturbation theory is developed for the time evolution operator in classical dynamics in the spirit of the Schwinger–Feynman–Dyson perturbation expansion and detailed rules are derived for computations. Complexification formalisms are given for the time evolution operator suitable for phase space analyses, and then extended to a two-dimensional setting for a study of the geometrical Berry phase as an example. Finally a direct integration of Hamilton's equations is shown to lead naturally to a path integral expression, as a resolution of the identity, as applied to arbitrary functions of generalized coordinates and momenta.  相似文献   
155.
 The development of a tool for calculating resonances and bound states in three-body systems described by a single-potential energy surface is reported. The method has been applied to the antiprotonic helium, doubly excited states in helium, the 11Li nuclear halo, the NeICl van der Waals molecule, and the recently found FHD reaction complex. Received November 26, 2001; accepted for publication November 28, 2001  相似文献   
156.
The diffraction efficiency and the recording and relaxation times of dynamic reflection holograms, recorded in CdF2 crystals with bistable centers are studied experimentally in the temperature range 20–100°C. In the model experiments which measured the quality of the wave reflected from the hologram, the dynamic wavefront distortions are demonstrated to be efficiently compensated using a holographic corrector based on these crystals. CdF2 crystals with bistable centers are likely to be useful in solving problems of correction of laser light wavefront and image correction in observation telescopes with nonideal primary mirrors.  相似文献   
157.
The adsorption of hydrogen on a clean Cu10%/Ni90% (110) alloy single crystal was studied using flash desorption spectroscopy (FDS), Auger electron spectroscopy (AES), and work function measurements. Surface compositions were varied from 100% Ni to 35% Ni. The hydrogen chemisorption on a-surface of 100% nickel revealed strong attractive interactions between the hydrogen atoms in accordance with previous work on Ni(100). Three desorption states (β1, β2 and α) appeared in the desorption spectra. The highest temperature (α) state was occupied only after the initial population of the β2-state. As the amount of copper was increased in the nickel substrate, desorption from the higher energy binding α-state was reduced, indicating a decrease in the attractive interactions among hydrogen atoms. The hydrogen coverage at saturation was not affected by the addition of copper to the nickel substrate until the copper concentration was greater than 25% at which a sharp reduction in saturation coverage occurred. This phenomenon was apparently due to the adsorption of hydrogen on Ni atoms followed by occupation of NiNi and CuNi bridged adsorption sites, while occupation of CuCu sites was restricted due to an energy barrier to migration.  相似文献   
158.
Translated fromProblemy Ustoichivosti Stokhasticheskikh Modelei. Trudy Seminara, 1988, pp. 115–120.  相似文献   
159.
160.
Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.  相似文献   
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