Activation volumes of wall-motion and nucleation processes in Co-based ferromagnetic multilayer films

Activation volumes of the wall-motion and nucleation processes in Co-based multilayer films were characterized from time-resolved domain evolution patterns. These activation volumes were both sensitive to the multilayer structure as well as the film preparation condition. The two activation volumes were generally unequal with each other and the inequality directly influenced on magnetization reversal behavior.     

Nonlinear spectral-spatial control and localization of supercontinuum radiation

We present the first observation of spatiospectral control and localization of supercontinuum light through the nonlinear interaction of spectral components in extended periodic structures. We use an array of optical waveguides in a LiNbO3 crystal and employ the interplay between diffraction and nonlinearity to dynamically control the output spectrum of the supercontinuum radiation. This effect presents an efficient scheme for optically tunable spectral filtering of supercontinua.     

Studies on vocal fold injection and changes in pitch associated with alcohol intake

The current study was carried out with particular emphasis on the association between phonetic function tests and alterations in the appearance of the hypopharyngeal and laryngeal mucosa, such as capillary dilatation, edema, and vocal fold injection after alcohol intake. The results demonstrated the occurrence of previously unrecognized pathophysiological changes associated with synchronous phonetic functions in the vocal pathway after alcohol intake. Serum ethanol and aldehyde concentration levels were evaluated hourly for 2.5 h after ingestion of alcohol. When an electronystagmogram showed the typical pattern of alcohol intake, the study was initiated. Occasionally, rhinography was performed on subjects complaining of a stuffy nose after alcohol intake.     

Phase-Only Encryption and Single Path Decryption System Using Phase-Encoded Exclusive-OR Rules in Fourier Domain

A phase-only encryption scheme using phase-encoded exclusive-OR (XOR) rules in a Fourier plane and a single path decryption system are presented. To generate phase-only encrypted data, a zero-padded original image, multiplied by a random phase image, is Fourier transformed and its real-valued data is encrypted with key data by using phase-encoded XOR rules. Since the original information is encrypted on the Fourier plane, the proposed encryption is more tolerant to loss of key information by scratching or cutting than previous XOR encryption in a space domain. A decryption is simply performed based on 2-f setup with spatial filter by Fourier transform for multiplication phase-only encrypted data with phase-only key data. Due to single path architecture without a reference wave, the proposed system is resistant to mechanical vibrations and fluctuation. Numerical simulations have confirmed the validity of the proposed encryption scheme and simple decryption architecture.     

Universal classes of magnetic-field- and electric-current-induced magnetic domain-wall dynamics in one and two dimensional regimes

Magnetic domain-wall (DW), interface between different magnetic domains, has received great attention due to its opportunities toward memory and logic devices as well as its abundant physical properties as a driven interface. Since recent advances of fabrication techniques allow us to scale down the devices, we are facing lower dimensional properties that should be elucidated undoubtedly. Here, we review recent progresses on DW dynamics in ferromagnetic nanowires and our recent experimental observation on the dimensionality transition of the DW dynamics driven by magnetic field and/or current. Our results show that the DW dynamics shows a transition from two to one dimensional behavior as the wire width decreases. In addition, we also demonstrate that the magnetic-field- and electric-current-driven DW dynamics in metallic ferromagnetic nanowires belong to the same universal class.     

Forming process of unipolar resistance switching in Ta2O5−x thin films

We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, E_F, required to initiate unipolar resistance switching (URS) in Ta₂O_5?x thin films. We measured the dependence of E_F by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s^?1 to 5 MV s^?1). Our results showed that the URS-E_F was not influenced by the Ta₂O_5?x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta₂O_5?x thin films should be governed by thermally assisted dielectric breakdown in our measurement range.     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.