Phase determination in holographic Moiré in presence of nonsinusoidal waveforms and random noise

This paper proposes a subspace parameter estimation method which besides allowing for accommodating multiple PZTs in an optical interferometer permits for extracting in real time values of phase shifts between data frames at each pixel point. The technique enables to freely choose values of phase shifts between 0 and π. A generalized phase measurement algorithm allows for computing multiple phase information present in the interferometer. The method facilitates the use of spherical beams, addresses errors arising from the miscalibration of the phase shifting devices, and is capable of handling nonsinusoidal waveforms in an effective manner. Numerical simulations demonstrate that phase distributions can be measured with high accuracy even in the presence of noise.     

On the repetitive operation of a self-switched transversely excited atmosphere CO<Subscript>2</Subscript> laser

The repetition rate capability of self-switched transversely excited atmosphere (TEA) CO₂ laser was studied for different gas flow configurations. For an optimized gas flow configuration, repetitive operation was achieved at a much smaller gas replenishment factor between two successive pulses when compared with repetitive systems energized by conventional pulsers.     

High-resolution frequency estimation technique for recovering phase distribution in interferometers

An integral approach to phase measurement is presented. First, the use of a high-resolution technique for the pixelwise detection of phase steps is proposed. Next, the robustness of the algorithm that is developed is improved by incorporation of a denoising procedure during spectral estimation. The pixelwise knowledge of phase steps is then applied to the Vandermonde system of equations for retrieval of phase values at each pixel point. Conceptually, our proposal involves the design of an annihilating filter that has zeros at the frequencies associated with the polynomial that describes the fringe intensity. The parametric estimation of this annihilating filter yields the desired spectral information embedded in the signal, which in our case represents the phase steps. The proposed method offers the advantage of extracting the interference phase of nonsinusoidal waveforms in the presence of miscalibration error of the piezoelectric transducer. In addition, in contrast to previously reported methods, this method does not require the application of selective phase steps between data frames for nonsinusoidal waveforms.     

Static Conformally Flat Spherically Symmetric Space-Time in Einstein-Cartan Theory of Gravitation

The exact solution of Einstein-Cartan field equations for static, conformally flat spherically symmetric space-time is derived and it is proved to be Petrov-type D.     

Nano-graphitic clustering and break down of phonon selection rule in diamond-like carbon films

Diamond-like carbon films are deposited on silicon substrates at different substrate bias using ECR-CVD technique. Raman spectroscopic studies show the presence of broad G and D peaks. In contrast to the position of D peak, the G peak shows a systematic red-shift with increase in the bias voltage. From the analysis it is found that an increase in bias voltage decreases the sp² cluster diameter. Furthermore, two additional Raman peaks at around 690 and 880 cm^?1 are also observed. These peaks, forbidden in the first order Raman scattering, arise due to the breakdown of phonon selection rule in graphitic nanoclusters.     

Structural,optical and electrical properties of post annealed Mg doped ZnO films for optoelectronics applications

Mg _x Zn_1-x O films with 0.15 mole composition of Magnesium were successfully deposited by the spin coating sol–gel method. Zinc acetate dihydrate and Magnesium acetate were used as starting precursors to prepare the solution in ethanol solvent. The MgZnO films were deposited on microscopic glass substrates and post annealed at three different temperatures. X-ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and UV–VIS Spectrophotometer were used to characterize the deposited films for studying structural and optical properties. Energy dispersive analysis by X-ray (EDAX) was used to determine incorporation of Mg content in ZnO films. XRD spectrum reveals that, the deposited Mg doped ZnO films were polycrystalline in nature. The intensity of c-axis in the XRD spectrum goes on decreasing as Mg composition slightly increasing corresponding to increase in annealing temperature. EDAX spectra clearly showed the incorporation of Mg into the ZnO films. Semiconductor characterization system was used for the I–V characterization of MgZnO films. I–V characteristics show decrease in current as increase in the biased voltage. Optical band gap of MgZnO films was found to be increased from 3.2 to 3.38 eV as estimated from the absorption coefficients.     

Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition

In this work, the evolution of Silicon Nanostructures with progressive annealing has been studied. Hot Wire CVD (HWCVD) process was used to deposit a Si_xN_y/a-Si structure on an n-type 〈100〉$〈100〉$ Silicon substrate with the Nitride acting as the buffer layer. The depositions were carried out at a low substrate temperature (250 °C) which is precisely why HWCVD was chosen over other processes for this work. The as-deposited sample was then annealed at 800 °C and 900 °C respectively. AFM studies revealed promising results hinting at the presence of Silicon Nanostructures. With progressive annealing the Nanostructures began to evolve, eventually turning into sharp Nanopillars upon annealing at 900 °C. In this paper, a growth model has been proposed which attempts to validate the experimental results. Though a lot of work is currently underway in this field, study of Silicon Nanostructures grown by HWCVD technique is relatively new.     

Electric field induced non-linear multisubband electron mobility in V-shaped asymmetric double quantum well structure

ABSTRACT

We study the effect of the external electric field F_ext on the low-temperature electron mobility μ in an asymmetrically doped Al_xGa_1-xAs based V-shaped double quantum well (VDQW) structure. We show that nonlinearity of µ occurs under double subband occupancy on account of intersubband effects. The field F_ext alters the VDQW potential leading to transfer of subband wave functions between the wells, which affects the scattering potentials and hence μ. In the VDQW structure, due to the alloy channel layer, the alloy disorder (Al-) scattering happens to be significant along with the ionised impurity (Imp-) scattering. The non-linear behaviour of μ is because of μ^Imp, while the overall magnitude of μ is mostly due to μ^Al. The increase of difference in the doping concentrations of the outer barriers increases the nonlinearity of μ. The oscillatory character of μ is amended by varying the width of the well and barrier and also the height of the VDQW. Our results can be used to study VDQW based nanoscale field effect transistor structures.     

Effect of argon ion activity on the properties of Y2O3 thin films deposited by low pressure PACVD

Yttrium oxide thin films are deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition process using an indegeneously developed Y(thd)₃ {(2,2,6,6-tetramethyl-3,5-heptanedionate)yttrium} precursor. Depositions were carried out at two different argon gas flow rates keeping precursor and oxygen gas flow rate constant. The deposited coatings are characterized by X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (GIXRD) and infrared spectroscopy. Optical properties of the films are studied by spectroscopic ellipsometry. Hardness and elastic modulus of the films are measured by load depth sensing nanoindentation technique. Stability of the film and its adhesion with the substrate is inferred from the nanoscratch test.It is shown here that, the change in the argon gas flow rates changes the ionization of the gas in the microwave ECR plasma and imposes a drastic change in the characteristics like composition, structure as well as mechanical properties of the deposited film.