Gyrocenter shift of low-temperature plasmas and the retrograde motion of cathode spots in arc discharges

The gyrocenter shift phenomenon explained the mechanism of radial electric field formation at the high confinement mode transition in fusion devices. This Letter reports that the theory of gyrocenter shift is also applicable to low temperature high collisional plasmas such as arc discharges by the generalization of the theory resulting from a short mean free path compared with the gyroradius. The retrograde motion of cathode spots in the arc discharge is investigated through a model with the expanded formula of gyrocenter shift. It is found that a reversed electric field is formed in front of the cathode spots when they are under a magnetic field, and this reversed electric field generates a rotation of cathode spots opposite to the Amperian direction. The ion drift velocity profiles calculated from the model are in agreement with the experimental results as functions of magnetic flux density and gas pressure.     

Cone-shaped structures of GeO2 fabricated by a thermal evaporation process

We have synthesized cone-like GeO₂ structures via thermal heating of Ge powders. We have investigated the effects of substrate temperature on the sample morphology, revealing that cone-shaped structures are preferentially obtained at higher temperature. The cone-shaped structures, which gradually become thinner to form a sharp tip, appear to be a single-crystalline, hexagonal structure of GeO₂. Room-temperature photoluminescence measurement revealed two emission peaks, at about 2.78 and 3.04 eV.     

Magnetic and noise properties of as-deposited and annealed soft underlayer

We studied the magnetic and noise properties with various soft underlayer (SUL) types. For an as-deposited SUL, the results of spectrum, oscilloscope waveform and MFM indicated that the SUL types with IrMn pinning layer have more noise level than that of SUL types without IrMn pinning layer. And, after magnetic filed annealing along radial direction of disk, the exchange bias field increased and the noise level of type B (exchange bias type) decreased. These results reveal that incomplete or partial coupling may be generated at the interface between IrMn and ferromagnetic layer in as-deposited SUL. This incomplete coupling may result in complex or multidomain patterns in ferromagnetic layer.     

Temperature dependent responsivity of quantum dot infrared photodetectors

Temperature dependent behavior of the responsivity of InAs/GaAs quantum dot infrared photodetectors was investigated with detailed measurement of the current gain. The current gain varied about two orders of magnitude with 100 K temperature change. Meanwhile, the change in quantum efficiency is within a factor of 10. The dramatic change of the current gain is explained by the repulsive coulomb potential of the extra carriers in the QDs. With the measured current gain, the extra carrier number in QDs was calculated. More than one electron per QD could be captured as the dark current increases at 150 K. The extra electrons in the QDs elevated the Fermi level and changed the quantum efficiency of the QDIPs. The temperature dependence of the responsivity was qualitatively explained with the extra electrons.     

Low dose 60Co gamma-irradiation effects on electronic carrier transport and DC characteristics of AlGaN/GaN high-electron-mobility transistors

The impact of internal irradiation with secondary Compton electrons, generated by gamma-photons, on the characteristics of III-N/GaN-based devices was explored. N-channel AlGaN/GaN high-electron-mobility transistors (HEMTs) were exposed to gamma-radiation from a ⁶⁰Co source for doses up to 600?Gy. Temperature-dependent electron beam-induced current (EBIC) was employed to measure minority carrier transport properties. For low doses below ～250?Gy, the minority carrier diffusion length in AlGaN/GaN HEMTs is shown to increase by about 40%. This increase is likely due to longer minority carrier lifetime induced by internal Compton electron irradiation. An associated decrease in activation energy, extracted from temperature-dependent EBIC, was also found. The obtained increase in transconductance and decrease in gate leakage current indicate an improvement in performance of the devices after low doses of irradiation. For high doses of gamma-irradiation, above ～300?Gy, the performance of HEMTs showed a deterioration. The deterioration results from the onset of increased carrier scattering due to additional radiation-induced defects, as is translated in a decrease of minority carrier diffusion length.     

Synergistic effect of hydrogen peroxide production and sonochemiluminescence under dual frequency ultrasound irradiation

The synergistic effect of H(2)O(2) production and sonochemiluminescence (SCL) was studied under both orthogonal and opposite dual irradiation at the frequencies of 28, 584 and 970 kHz and at various acoustic powers. The largest reduction in H(2)O(2) production was observed under opposite dual irradiation at a 28/28 kHz frequency without considering the acoustic power levels. The largest enhancement was observed under dual irradiation at a frequency of 28/970 kHz. This enhancement might be due to the increased number of bubbles that underwent violent collapse by low frequency ultrasound (28 kHz). These results were also confirmed by observing the SCL. Under dual irradiation at relatively high frequencies (i.e., 584 and 970 kHz), the synergistic effect was high at low acoustic power levels. However, the effect tended to decrease (to the equivalent of the calculation from the result of each single irradiation) with increasing acoustic power. Unlike dual irradiation coupled with a frequency of 28 kHz, the inhibition effect was not observed under dual irradiation at relatively high frequencies. With respect to H(2)O(2) production, the production rate constants of H(2)O(2) followed the order of 584/584>584/970>28/970≈28/584>28/28 kHz, which resulted from the fact that the production efficiency of H(2)O(2) at an irradiation frequency of 584 kHz was considerably higher than that at other frequencies.     

Facile-chelating amine-assisted synthesis of β-In<Subscript>2</Subscript>S<Subscript>3</Subscript> nanostructures from a new single-source precursor derived from <Emphasis Type="Italic">S</Emphasis>-methyl dithiocarbazate

Flake-built 3D β-In₂S₃ nanostructures were synthesized by thermolysis of S-methyl dithiocarbazate–indium(III) complex precursor in hexamethylenediamine (HMDA). XRD patterns showed that the cubic phase of 3D β-In₂S₃ remained unchanged but the crystallinity was increased after annealing at 400 °C for 20 min. The products were also characterized by SEM, TEM, and EDS. Based on the experimental results, we propose that the growth of 3D nanostructures is controlled by the stability of the intermediate chelate complex made by indium(III) and solvent. The optical properties of the 3D β-In₂S₃ nanostructures were also investigated by UV–Vis and PL spectroscopy, which indicated strong quantum confinement effect.     

Coupling of Brans-Dicke scalar field with Horava-Lifshitz gravity

We look for a Brans-Dicke type generalization of Horava-Lifshitz gravity. It is shown that such a generalization is possible within the detailed balance condition. Classically, the resulting theory reduces in the low energy limit to the usual Brans-Dicke theory with a negative cosmological constant for certain values of parameters. We then consider homogeneous, isotropic cosmology and study the effects of the new terms appearing in the model.     

Growth of InN films and nanorods by H-MOVPE

InN films and nanorods were grown by hydride metalorganic vapor phase epitaxy (H-MOVPE) and the effects of growth temperature, and NH₃/TMIn and HCl/TMIn ratios on morphological dependences were studied. The growth habit of InN varied from thin film to microrod to nanorod to no deposition as the growth conditions were changed about transition from growth to etching conditions. The growth and etch regimes were also predicted by chemical equilibrium calculations of In–C–H–Cl–N-inert system. The optical properties of InN nanorods and columnar structured films were measured by room temperature PL and a maximum intensity was observed at 1.08 eV for both structures.     

Preference of sensory neural coding for 1/f signals

We investigated the influences of different types of temporal correlations in the input signal on the functions and coding properties of neurons in the primary visual cortex (V1). We found that the temporal transfer functions of V1 neurons exhibit higher gain, and the spike responses exhibit higher coding efficiency and information transmission rates, for the 1/f (natural long-term correlation) signals than for 1/f(0) (no correlation) and 1/f(2) (stronger long-term correlation) signals. These results suggest that the intermediate long-term correlation ubiquitous to natural signals may play an important role in shaping and optimizing the machinery of neurons in their adaptation to the natural environment.