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11.
The dendrite growth process of transparent NaBi(WO4)2 with small prandtl and high melting point was studied by using the in-situ observation system. According to the dynamic images and detailed information, there are two kinds of restriction effect on
the dendrite growth, the competition between arms and branches and the convection in the melt. The dendrite growth rate was
time dependent, and the rate of arm growth reached the maximum 5.8 mm/s in the diffusive-advective region and rapidly decreased
in the diffusive-convective region. The growth rate of branch had the same change trends as the arm’s. Based on the EPMA-EDS
data of solidification structure of quenched NaBi(WO4)2 melt, it was found that there were component differences from stoichiometric concentration in the melt near the interface
during the growth process.
Supported by the National Natural Science Foundation of China (Grant No. 50331040) and the Innovation Funds from Shanghai
Institute of Ceramics, Chinese Academy of Sciences (Grant No. SCX0623) 相似文献
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The pentafluorobenzenethiyl radical is an efficient hydrogen abstractor from an activated methylene or methine group and bis(pentafluorophenyl) disulfide is an efficient electron acceptor from the resulting radical intermediate. Thus benzyl-OTBS ether was easily converted into the corresponding pinacol, and 2-phenyl-1,3-dioxanes are converted into the monobenzoates of diols. 相似文献
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本文在Q-正则Loewner空间中用环模不等式刻划了拟对称映射.另外,在 Q-维Ahlfors-David正则空间中建立了拟对称映射作用下的Grotzsch-Teichmuller型 模不等式,它是通过伸张系数的积分平均来表示. 相似文献
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Hiroshi Sakurai Fumitake Itoh Katsuyoshi Takano Hiromi Oike 《Journal of Physics and Chemistry of Solids》2004,65(12):2083-2088
A novel technique of measuring a magnetic Compton profile using the grazing angle geometry against a sample surface (Grazing Incidence Magnetic Compton Profile) has been successively developed. Measurements of a magnetic moment and a magnetic Compton profile are possible for a Fe 200 nm film on a thick glass substrate. The estimated thinnest limit for measurements is 100 nm for a Fe film. 相似文献
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H. Kobayashi T. Sakurai Y. Yamashita T. Kubota O. Maida M. Takahashi 《Applied Surface Science》2006,252(21):7700-7712
X-ray photoelectron spectroscopy (XPS) measurements under bias can observe low density interface states for metal-oxide-semiconductor (MOS) diodes with low densities. This method can give energy distribution of interface states for ultrathin insulating layers for which electrical measurements cannot be performed due to a high density leakage current. During the XPS measurements, a bias voltage is applied to the rear semiconductor surface with respect to the ∼3 nm-thick front platinum layer connected to the ground, and the bias voltage changes the occupation of interface states. Charges accumulated in the interface states shift semiconductor core levels at the interface, and thus the analysis of the bias-induced shifts of the semiconductor core levels measured as a function of the bias voltage gives energy distribution of interface states. In the case of Si-based MOS diodes, the energy distribution and density of interface states strongly depend on the atomic density of silicon dioxide (SiO2) layers and the interfacial roughness, respectively. All the observed interface state spectra possess peaked-structures, indicating that they are due to defect states. An interface state peak near the Si midgap is attributable to isolated Si dangling bonds at the interface, while those above and below the midgap to Si dangling bonds interacting weakly with Si or oxygen atoms in the SiO2 layers. A method of the elimination of interface states and defect states in Si using cyanide solutions has been developed. The cyanide method simply involves the immersion of Si in KCN solutions. Due to the high Si-CN bond energy of ∼4.5 eV, the bonds are not ruptured at 800 °C and upon irradiation. The cyanide treatment results in the improvement of the electrical characteristics of MOS diodes and solar cells. 相似文献
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