Addition of dihalocarbenes to 3H-1,5-benzodiazepines. Synthesis of 2H-bisazirino[1,2-a:2′,1′-d][1,5]benzodiazepines

Addition of dihalocarbenes, generated from haloforms using a phase transfer catalyst, to 3H-1,5-benzodi-azepines gave 2H-Bisazirino[1,2-a:2′,1′-d][1,5]benzodiazepines, a new ring system.     

Electro-optic response of cubic liquid crystal compounds in Kerr cell geometry

We present the results of our investigations on the electro-optic response of the cubic phase liquid crystal compounds 1,2-bis-[4-n-octyloxy-benzoyl]-hydrazine (BABH8) and 4'-n-hexadecyloxy-3'-nitrobiphenyl-4-carboxylic acid (ANBC16) in Kerr cell geometry. The AC electric field response in the BABH8 cubic phase was found to be as small as that of the isotropic phase, even though there was a response in the adjacent smectic C (SmC) phase. The response in the SmC phase means that the BABH8 molecule itself has an electric field coupling ability, but this ability is strongly inactivated in the cubic phase. This inactivity to the AC fields was also found in the cubic phase of ANBC16. This behaviour could be explained by the small structural unit size of the cubic phase.     

Hydrogen Peroxide Formation by Electric Discharge with Fine Bubbles

Pulsed discharge plasma is typical oxidation technology for disposing organic compounds in aqueous solutions. When this electrical discharge plasma was applied in water, it may produce hydrogen peroxide (H₂O₂) without any catalyst or chemical agent. In order to increase H₂O₂ production by electrical discharge plasma in water, fine bubbles were introduced into the electrical discharge plasma in this experiment. Bipolar pulsed voltages were applied to cylindrical electrodes in the water while Ar or O₂ bubbles were introduced, generating a pulsed discharge plasma. The introduction of the bubbles seemed to enhance the dissociation of water molecules and increased H₂O₂ formation, especially with O₂ bubbling. Dissolved oxygen in the water contributed to H₂O₂ formation by pulsed discharge plasma with the bubbles, while dissociation of water molecules was the cause of H₂O₂ formation by pulsed discharge plasma without bubbles. More H₂O₂ was formed by pulsed discharge plasma with O₂ bubbles, because the amount of dissolved oxygen in the water increased upon bubbling with O₂.     

Superconducting characteristics and microstructure of polycrystalline Zn-doped In2O3 films

In order to investigate the relation among the superconducting transition T_c, carrier density n, resistivity ρ and the microstructure in the polycrystalline (In₂O₃)_1?x–(ZnO)_x films, we prepared specimen films by post annealing of amorphous films with x = 0.025 at various annealing temperature T_a and for annealing time t_a = 1 h and 4 h. As for microstructures, we have investigated the distribution of elements by scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). We have found followings: (1) The annealed films clearly show the superconductivity of which T_c depends on T_a, t_a and n. This indicates that the superconductivity is determined by the combination of crystallinity and carrier density. (2) The data on STEM–EELS spectra mapping of indium plasmon indicate that droplets of the pure indium phase exist inside a film, where the distribution of these droplets dispersed. Therefore, it seems that droplets do not form an electrical conducting path, that is, it is possible that observed superconductivity is due to intrinsic characteristic of polycrystalline (In₂O₃)_1?x–(ZnO)_x films.     

Investigation of void formation beneath thin AlN layers by decomposition of sapphire substrates for self-separation of thick AlN layers grown by HVPE

Void formation at the interface between thick AlN layers and (0 0 0 1) sapphire substrates was investigated to form a predefined separation point of the thick AlN layers for the preparation of freestanding AlN substrates by hydride vapor phase epitaxy (HVPE). By heating 50–200 nm thick intermediate AlN layers above 1400 °C in a gas flow containing H₂ and NH₃, voids were formed beneath the AlN layers by the decomposition reaction of sapphire with hydrogen diffusing to the interface. The volume of the sapphire decomposed at the interface increased as the temperature and time of the heat treatment was increased and as the thickness of the AlN layer decreased. Thick AlN layers subsequently grown at 1450 °C after the formation of voids beneath the intermediate AlN layer with a thickness of 100 nm or above self-separated from the sapphire substrates during post-growth cooling with the aid of voids. The 79 μm thick freestanding AlN substrate obtained using a 200 nm thick intermediate AlN layer had a flat surface with no pits, high optical transparency at wavelengths above 208.1 nm, and a dislocation density of 1.5×10⁸ cm⁻².     

A new method for the synthesis of novel 1,2,4-triazolo[3,4-f][1,2,4]triazines

Novel compounds 8-(quinoxalin-2-yl)-1,2,4-triazolo[3,4-f][1,2,4]triazines 3a,b were obtained by a new annulation method in the 1,2,4-triazine synthesis.     

Synthesis and reduction ability of borane complexes of 2-aminopyridine derivative having a chiral center at the amino nitrogen

A novel method for synthesis of a chiral amine borane is described and selective reductions of carbonyl compounds with the amine borane are investigated.     

Accurate and rapid estimation on spectral interferences in routine analysis by ICP-AES: use of mutual interference coefficients

A practical method to estimate spectral interferences and to select optimum analytical lines in ICP-AES is suggested. Depending on the matrix composition and the amounts of the analyte, the analytical lines suffering from little interferences and the limit of determination can be determined from calculation using spectral interference coefficients. For this calculation, the spectral interference coefficients, which are defined as apparent mass of the analyte equivalent to the spectral interference from unit mass of the interferent, are obtained experimentally for 639 emission lines of 68 elements. There is a good correlation between the coefficients obtained on two spectrometers having different resolutions.