Size and temperature effects on band gaps in periodic fluid-filled micropipes

A new model is proposed for determining the band gaps of flexural wave propagation in periodic fluid-filled micropipes with circular and square thin-wall cross-sectional shapes, which incorporates temperature, microstructure, and surface energy effects. The band gaps depend on the thin-wall cross-sectional shape, the microstructure and surface elastic material constants, the pipe wall thickness, the unit cell length, the volume fraction, the fluid velocity in the pipe, the temperature change,and the thermal expansion coefficient. A systematic parametric study is conducted to quantitatively illustrate these factors. The numerical results show that the band gap frequencies of the current non-classical model with both circular and square thin-wall cross-sectional shapes are always higher than those of the classical model. In addition,the band gap size and frequency decrease with the increase of the unit cell length according to all the cases. Moreover, the large band gaps can be obtained by tailoring these factors.     

新型手性氨基酸烯砜的合成

以苯亚磺酸钠和3-氯-2-甲基-1丙烯为原料,经偶联、氯化、溴化,之后再与氨基酸胺化反应合成得到了两个新型手性氨基酸烯砜化合物。所获得化合物的结构经HR-MS,1H,13C和/或DEPT NMR验证。     

Ultrahigh Vacuum Atomic Layer Epitaxy of Ternary II-VI Semiconductor Compounds

A concise discussion concerning the UHV ALE growth of ternary II-VI compounds is presented in this paper. Simultaneous reflection mass spectrometry (REMS) and reflection high energy electron diffraction (RHEED) measurements of the surface kinetic and structural parameters, respectively, governing the UHV ALE growth of Cd_1-xZn_xTe and Cd_1-xMn_xTe heteroepitaxial films are reported. In addition, a Monte-Carlo-based method for simulation of the UHV ALE process of CdTe (the model-compound for this growth technique) has been used for investigation of the Cd cation's fluxes reflected from the growing epilayer surface in different phases of the ALE process. The Cd⁺ ion-related REMS signals measured during CdTe growth have been compared with the simulation results.     

Analysis of the Interfacial Energy of GaAs‐Si Heterostructures

Numerical calculations of GaAs/Si interfacial energy based on Ackland's semiempirical four‐parameter model for tetravalent semiconductor have been performed. The calculated interfacial energy varies with Si substrate misorientation, showing minima at angles that correspond to the (011), (133), (112) and (113) planes of Si. These planes are preferable for GaAs heteroepitaxy on Si substrates.