Magnetic calorimeter for registration of small energy release

A scheme of magnetic calorimeter for registration of rare events characterized by small energy release (cosmic rays, WIMPs, solitary X-ray quanta) is proposed. The calorimeter is brought to operation by adiabatic demagnetization, and its magnetic response is measured by a quantum interferometer (SQUID, A. Barone and G. Paterno, Physics and applications of Josephson Effect). Special consideration is given to the specific features of calorimeter operation in the ferromagnetic transition region. The trigger registration of ultrasmall energy release by a ferromagnetic system in the metastable state is described.     

New estimates for the Laplacian,the div–curl,and related Hodge systems

We establish new estimates for the Laplacian, the div–curl system, and more general Hodge systems in arbitrary dimension, with an application to minimizers of the Ginzburg–Landau energy. To cite this article: J. Bourgain, H. Brezis, C. R. Acad. Sci. Paris, Ser. I 338 (2004).     

AGS能量下π~－π~－的Bose—Einstein关联

全同粒子间的玻色－爱因斯坦关联可以用来研究相对论性核碰撞中次级粒子源分布及有关的物理问题．本文用强子级联模型（ＨＣＭ）模拟２８Ｓｉ（１４．６ＡＧＣＶ／ｃ）＋Ａｕ反应，得到π－粒子的ｆｒｅｅｚｅ－ｏｕｔ状态，进而计算了π－π－关联函数，取得与实验一致的结果．还计算了ｆｒｅｅｚｅ—ｏｕｔπ－源的均方根线度，并讨论了它与拟合方法抽取的源参数间的关系．     

Peripheral spectrum of positive quasi-compact operators onC 0(X)

LetX be a locally compact space, andT, a quasi-compact positive operator onC ₀(X), with positive spectral radius,r. Then the peripheral spectrum ofT is a finite set of poles containingr, and the residue of the resolvent ofT at each peripheral pole is of finite rank. Using the concept of closed absorbing set, we develop an iterative process that gives the order,p, ofr, some special bases of the algebraic eigenspaces ker(T-r) ^p and ker(T ^*-r) ^p , and finally the dimension of the algebraic eigenspace associated to each peripheral pole.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

Synthesis of macrocyclic tetraamides derived from α-amino acids and their investigations using ESI-MS technique

Chiral α,ω-diesters react under high-pressure conditions (10 kbar) with α,ω-diamines to give chiral cyclic tetraamides of C₂-symmetry. The complexation properties of tetraamides towards alkali metal cations (Li⁺, Na⁺, K⁺, Rb⁺ and Cs⁺) were estimated on the basis of ESI-MS spectra.     

Synthesis and characterization of surface-cyanofunctionalized poly (N-isopropylacrylamide) latexes

 A series of P[N-isopropylacrylamide (NIPAM)] latexes with different contents of cyano groups were successfully prepared by either seeded or shot-growth polymerizations of an aqueous solution containing acrylonitrile (AN) onto a seed P[NIPAM] latex, respectively, and further characterized by FT-IR, ¹H-NMR, elemental analysis, as well as by quasielastic light scattering (QELS) and scanning electron microscopy (SEM). All prepared surface-cyanofunctionalized P[NIPAM] latexes exhibited the same range of lower critical solution temperature (LCST) as a pure P[NIPAM] latex. The shot polymerization process proved more efficient at yielding cyano derivatized latexes than the seeded polymerization technique. The amount of incorporated cyano groups onto the particles was determined with a good correlation both by ¹H-NMR and elemental analysis. The higher the amount of initially introduced AN monomer in the reaction mixture, the more cyano groups were incorporated onto the particles. The surface of the particles with high content of cyano groups appeared quite rough by SEM in comparison with that of the pure P[NIPAM] particles. Received: 25 February 1998 Accepted: 23 June 1998