Magnetic Properties of Co-Doped TiO2 Films Grown on TiN Buffered Silicon Substrates

Co-doped TiO2 thin films are grown on TiN buffered silicon substrates by the pulsed laser deposition method and then hydrogenated. Transmission electron microscopy and high-angle annular dark-field scanning transmission electron microscopy measurements have shown that the TiN buffer layer can suffer a 400℃ deposition temperature and prevent the growth of silicon dioxide on silicon. After that, the room temperature ferromagnetism behaviors are observed in the hydrogenated samples, which are measured by the alternating gradient magnetometer. X- ray photoelectron spectroscopy and x-ray absorption fine structure measurements have revealed the existence of cobalt clusters. According to the material analysis, the magnetic behavior after hydrogenation is suggested to be induced by the enhancement of cobalt dusters.     

恒热流加热开口腔自然对流的可视化实验和数值模拟

本文采用激光全息干涉和激光片光照射烟可视化方法获得了恒热流加热的二维开口腔自然对流问题的温度场和流场,并进行了数值分析.实验结果与数值模拟结果吻合.数值计算表明方腔内流体的流通量与Ra*和深高比B有关,当Ra*＞104时随深高比B增加流通量增加;B×Nu与深高比B呈线性关系.利用B×Nu与深高比B的线性关系,通过引入当量导热系数λc,本文还给出了加热壁面的平均温度的简单计算方法.     

受风灾影响后的农作物冠层反射信息测量与分析

受到台风“布拉万”的影响,吉林中部地区大范围处于灌浆期的玉米倒伏。为了确定倒伏后玉米冠层对反射信息的影响,从不同角度对其高光谱反射信息进行了测量与分析;与此同时,对偏振反射信息也进行了测量,将反射与偏振信息结合起来分析了受风灾影响后农作物冠层反射特征的变化。结果表明,风灾过后倒伏玉米的反射信息在可见光波段降低,而在近红外波段范围增大,与正常直立生长的玉米反射信息比较,具有非常明显的各项异性特征;同时,倒伏玉米的反射光中包含丰富的偏振信息,利用偏振信息可以为区分倒伏区域提供依据。这为利用遥感技术确定受灾范围与计算损失产量提供了依据。     

氢气流量对混合物理化学气相沉积法制备MgB_2超薄膜的影响

用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition简称为HPCVD)制备了MgB2超薄膜.在背景气体压强、B2H6的流量和成膜时间等条件一定的情况下,当氢气的流量从200到400sccm范围内变化时,观察了其对成膜的影响.结果显示,随氢气流量增大,膜表面粗糙度增大,同时膜面的连接性变好,伴随着样品的超导转变温度得到提高.对于平均厚度是10nm和15nm的样品,氢气流量分别是200sccm和300sccm时,Tc分别是26K和33K与28K和37K.     

伏安特性实验中电压表的改进应用

改进了传统电压表的面板设计,使电压表不仅能测两端的电压,还能测量自身的电流.于是在测量元件的伏安特性实验中,使用该电压表可以不考虑被测器件电阻的大小,均采用电流表外接的接线方式,即让电压表分流.再利用电压表的电流测量功能,测出自身分流电流的大小,从而可以准确得出被测器件的电流与两端的电压.     

电化学方法制备Si阵列微孔的工艺研究

对用电化学方法制备Si大孔阵列管坑工艺进行了初步探索。 通过对Si在KOH溶液中各向异性湿法蚀刻和在HF酸溶液中的电化学蚀刻过程中各种参数的摸索, 确定在室温下制备大孔阵列的最佳配比浓度, 蚀刻出符合要求的管坑阵列, 为进一步制备结构化闪烁屏奠定了实验基础。 The 3 D structures in silicon are increasingly coming to use in many fields. For example, the high resolution X ray digital imaging detector can be made by coupling CCD and the scintillating screen which is made by the array trenches filled with CsI(Tl). In the present work, we explored the technology of etching micro array on the n type silicon with high resistance. By studying the relative parameters of anisotropic etching of KOH and electro chemical etching of HF, the optimized concentration of HF was determined and the micro pore array trenches with 200 μm in depth were realized. The results establish an experimental base for further fabrication of the scintillating screen.     

Systematics on fission fragment mass distribution of neutron induced 235U fission

Based on the neutron induced fission fragment mass distribution data up to neutron energy 20 MeV measured with the double kinetic energy method (KEM) and the radio active method (RAM), the systematics of fission fragment mass distribution was investigated by using 5 Gaussian model and the systematics parameters were obtained by fitting the experimental data. With the systematics, the yields of any mass A and at any energy in the region from 0 to 20 MeV of neutron energy can be calculated. The calculated results could well reproduce the experimental data measured with KEM, but show some systematical deviation from the data measured by RAM, which reflects some systematical deviations between the two kinds of measured data.The error of systematics yield was calculated in an exact error transformation way, including from the error of the experimental yield data to the error of the discrete parameters, then to the systematics parameters,and at last to the yield calculated with systematics.     

Effect of Different Substrate Temperature on Sb-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition on Sapphire Substrates

Sb-doped ZnO thin films are deposited on c-plane sapphire substrates by pulsed laser deposition. Hall results indicate that the conductivity of the Sb-doped ZnO thin films is strongly dependent on the substrate temperature. The sample deposited at the temperature of 550°C exhibits p-type conductivity. It gives a resistivity of 15.25Ω＆#12539;cm, with a Hall mobility of 1.79cm2V-1s-1 and a carrier concentration of 2.290×1017cm-3 at room temperature. The x-ray diffraction indicates that the Sb-doped ZnO thin films deposited in the range of 450-650°C are high c-axis oriented. Low-temperature photoluminescence spectra indicate that the sample deposited at 550°C shows the strong acceptor-bound exciton （A0X） emission.     

阵形畸变对拖曳双线阵左右舷分辨性能的影响

分析了阵形畸变对拖曳双线阵左右舷分辨性能的影响。首先由双线阵指向性函数及左右舷抑制比公式,推导并定义了双线阵声呐实现左右舷分辨的两个关键参量——特征方位和特征频率。然后在引入阵形畸变量的基础上,利用阵形畸变时的左右舷抑制比公式,进一步推导得到特征方位及特征频率关于阵形畸变量的解析关系式。理论分析、仿真结果以及海上试验数据都表明,阵形畸变会改变特征方位和特征频率,造成拖曳双线阵左右舷分辨性能下降甚至再次产生左右舷模糊。     

国内首次超导高频系统束流调试及高功率试验

2004—2007年BEPC高频系统从常温腔改建到超导腔, 逐渐解决了改频的物理问题和超导技术的工程难题, 实现了与国际先进技术接轨, 并按期保质完成了工程、调束任务. 高频系统是BEPCⅡ工程首个吸收国外超导技术、自主完成集成和调试成功的大型装置; 2006年7月国内首次超导高频大功率试验成功; 2006年11月完成系统联调, 按期投入BEPCⅡ首轮调束; 同年12月首次投入同步辐射运行; 2007年2至5月, 东、西两套超导高频系统在1MV以上的加速电压均已实现正/负电子1.89GeV注入积累和110/114mA对撞; 在同步辐射运行中, 逐渐达到2.5GeV/250mA、束流功率100kW, 接近国外同类机器水平; 束流试验证明两套高频系统的