Decisive factors for realizing atomic-column resolution using STEM and EELS

We demonstrate atomic-column imaging by scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). The silicon atomic-columns of a beta-Si3N4 (0 0 1) specimen are clearly resolved. The atomic-site dependence and the energy-loss dependence of the spatial resolution are elucidated on the basis of the experimental results and multislice calculations. We describe two decisive factors for realizing atomic-column imaging in terms of localization in elastic and inelastic scattering. One is the channeling of the incident probe due to dynamical diffraction, which has atomic-site dependence. The other is the localization in inelastic scattering; in addition to the energy-loss dependence of delocalization, we point out its dependence on the offset energy from the ionization energy, i.e., an additional localization factor concerning the Bethe surface. The present atomic-column observation of the Si-L core-loss image indicates that the local approximation, which can be interpreted intuitively, is achievable under appropriate experimental conditions, such as high-energy-loss, a small convergence angle and a large collection angle (e.g., 400 eV, 15 and 30 mrad, respectively).     

C-V characterization of Schottky- and MIS-gate SiGe/Si HEMT structures

Electrical properties of Schottky- and metal-insulator-semiconductor (MIS)-gate SiGe/Si high electron mobility transistors (HEMTs) were investigated with capacitance-voltage (C-V) measurements. The MIS-gate HEMT structure was fabricated using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). The Cat-CVD SiN thin film (5 nm) was found to be an effective gate insulator with good gate controllability and dielectric properties. We previously investigated device characteristics of sub-100-nm-gate-length Schottky- and MIS-gate HEMTs, and reported that the MIS-gate device had larger maximum drain current density and transconductance (g_m) than the Schottky-gate device. The radio frequency (RF) measurement of the MIS-gate device, however, showed a relatively lower current gain cutoff frequency f_T compared with that of the Schottky-gate device. In this study, C-V characterization of the MIS-gate HEMT structure demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel.     

Atomic-layer resolved magnetic and electronic structure analysis of ni thin film on a Cu(001) surface by diffraction spectroscopy

Up until now there has been no direct method for detecting the electronic and magnetic structure of each atomic layer at the surface, which is an essential analysis technique for nanotechnology. For this purpose, we have developed a new method, diffraction spectroscopy, based on the photon energy dependence of the angular distribution of Auger electron emission. We have applied this method to analyze the magnetic structure of a Ni ultrathin film on a Cu(001) surface around the spin reorientation transition. Atomic-layer resolved x-ray absorption and magnetic circular dichroism spectra were obtained. Surface and interior core-level shifts and magnetic moments are determined for each atomic layer individually.     

Neuroprotective effects of edaravone-administration on 6-OHDA-treated dopaminergic neurons

Background

A recent human clinical trial of an Alzheimer's disease (AD) vaccine using amyloid beta (Aβ) 1–42 plus QS-21 adjuvant produced some positive results, but was halted due to meningoencephalitis in some participants. The development of a vaccine with mutant Aβ peptides that avoids the use of an adjuvant may result in an effective and safer human vaccine.

Results

All peptides tested showed high antibody responses, were long-lasting, and demonstrated good memory response. Epitope mapping indicated that peptide mutation did not lead to epitope switching. Mutant peptides induced different inflammation responses as evidenced by cytokine profiles. Ig isotyping indicated that adjuvant-free vaccination with peptides drove an adequate Th2 response. All anti-sera from vaccinated mice cross-reacted with human Aβ in APP/PS1 transgenic mouse brain tissue.

Conclusion

Our study demonstrated that an adjuvant-free vaccine with different Aβ peptides can be an effective and safe vaccination approach against AD. This study represents the first report of adjuvant-free vaccines utilizing Aβ peptides carrying diverse mutations in the T-cell epitope. These largely positive results provide encouragement for the future of the development of human vaccinations for AD.     

Comparison of measured and calculated in-air secondary neutrons in passive carbon-ion radiotherapy

Undesired radiation exposure in normal tissues around a treatment volume in proton and carbon-ion radiotherapies is less than that in the conventional radiotherapies due to physical and/or biological properties of charged particles. Such exposure is always considered in a treatment planning, however, undesired exposure in normal tissues far from the treatment volume cannot be considered in the treatment planning, because it is caused by secondary radiation as well as leakage primary particles. Though this exposure is considerably lower than that near the treatment volume, it may be not negligible to estimate the risk of secondary cancer especially for the young patients. In particular, the assessment of the secondary neutrons that inevitably produced within the patient and beam line devices is very important due to the potency of their biological effect. The distributions of the absorbed dose and the biological effectiveness in phantom/patient are required to assess the risk, and Monte Carlo calculation plays a key role due to a difficulty of the measurements. In this study, comparison of measured and calculated in-air neutrons at the patient position in the Heavy Ion Medical Accelerator in Chiba (HIMAC) treatment room are performed to verify the accuracy of the Monte Carlo code, PHITS. Our calculations underestimated epithermal neutrons measured by Bonner sphere system. This discrepancy may be caused by an insufficiency of the calculational geometry modeling, consequently an underestimation of neutrons scattered and moderated by the beam line devices. However, it is unlikely that the underestimation significantly contribute to the dose estimation in phantom. On the other hand, the calculation reproduced the measured ambient dose equivalents well because they were dominated by neutrons above 0.1 MeV. This result showed that the PHITS code has a potential ability to evaluate the neutron exposure of the patient in passive carbon-ion radiotherapy.     

Microcrystalline silicon–germanium thin films prepared by the chemical transport process using hydrogen radicals

We propose microcrystalline silicon–germanium (μc-SiGe) as a bottom cell material of triple-junction solar cells in order to improve the conversion efficiency of thin film solar cells. The μc-SiGe thin films were prepared by the chemical transport process using Si and Ge targets exposed to hydrogen radicals. We successfully produced highly photosensitive μc-SiGe films with relatively low Ge composition by increasing the gas pressure, and observed the photovoltaic effect in pin solar cell structures. However, it was difficult to produce μc-SiGe films with higher Ge composition. We found that a small amount of argon introduction into the chemical transport process enables us to increase Ge composition at the high pressure. Moreover, the argon introduction seems effective to maintain the electrical properties in relatively high Ge composition. The results suggest that the μc-SiGe thin films prepared by the chemical transport process are one of the candidates for new photovoltaic materials.