光电仪器结构设计中的经济性研究

针对光电仪器行业对降低光电仪器成本日趋渐高的呼声,提出了运用价值工程理论对光电仪器结构设计中的经济性进行研究的思路。从产品结构设计成本、材料成本、产品制造成本、生产周期这四个方面对光电仪器结构设计中的经济性进行了分析研究。研究结果表明,光电仪器结构设计经济性分析有助降低光电仪器产品的生产成本、缩短生产周期、提升产品价值,从而获得较好的社会效益和经济效益。     

Monte Carlo Simulation of Optical Properties of Wake Bubbles

Based on Mie scattering theory and the theory of multiple light scattering, the light scattering properties of air bubbles in a wake are analysed by Monte Carlo simulation. The results show that backscattering is enhanced obviously due to the existence of bubbles, especially with the increase of bubble density, and that it is feasible to use the Monte Carlo method to study the properties of light scattering by air bubbles.     

Enhanced Efficiency of Polymer： Fullerene Bulk Heterojunction Solar Cells with the Insertion of Thin TiO2 Layer near the LiF/A1 Electrode

The insertion layer of TiO2 between polymer-fullerene blend and LiF/AI electrode is used to enhance the shortcircuit current Isc and fill factor （FF）. The solar cell based on the blend of poly[2-methoxy-5-（2＇-ethylhexyloxy）- 1,4-phenylenevinylene] （MEH-PPV） and C60 with the modifying layer of TiO2 （about 20nm） shows the open- circuit Voc of about 0.62 V, short circuit current Isc of about 2.35 mA/cm^2, filling factor FF of about 0.284, and the power conversion efficiency （PCE） of about 2.4% under monochromatic light （50Onto） photoexcitation of about 17mW/cm^2. Compared to ceils without the TiO2 layer, the power conversion efficiency increases by about 17.5%. Similar effect is also obtained in cells with the undoped MEH-PPV structure of ITO/PEDOT：PASS/MEH- PPV/（TiO2）LiF/AI. The improved solar cell performance can be attributed to enhanced carrier extraction efficiency at the active layer/electrode interfaces when TiO2 is inserted.     

Electronic Structures of Wurtzite GaN with Ga and N Vacancies

The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band structures can be significantly modified by the Ga and N vacancies in the GaN samples. Generally, the width of the valence band is reduced and the band gap is enlarged. The defect-induced bands can be introduced in the band gap of GMV due to the Ga and N vacancies. Moreover, the GaN with high density of N vacancies becomes an indirect gap semiconductor. Three defect bands due to Ga vacancy defects are created within the band gap and near the top of the valence band. In contrast, the N vacancies introduce four defect bands within the band gap. One is in the vicinity of the top of the valence band, and the others are near the bottom of the conduction band. The physical origin of the defect bands and modification of the band structures due to the Ga and N vacancies are analysed in depth.     

Noise Behaviour of a THz Superconducting Hot-Electron Bolometer Mixer

A quasi-optical superconducting NbN hot-electron bolometer （HEB） mixer is measured in the frequency range of 0.5-2.5 THz for understanding of the frequency dependence of noise temperature of THz coherent detectors. It has been found that noise temperature increasing with frequency is mainly due to the coupling loss between the quasioptical planar antenna and the superconducting HEB bridge when taking account of non-uniform distribution of high-frequency current. With the coupling loss corrected, the superconducting HEB mixer demonstrates a noise temperature nearly independent of frequency.     

便携式近红外漫反射中药质量监控仪的研制

介绍了便携式近红外漫反射中药质量监控仪的设计思想、基本结构、测试条件和使用方法。该光谱仪具有体积小、重量轻、成本低等特点,现场监控中药质量是非常便利的。     

非晶Si/SiO2超晶格的制备及其光谱研究

用磁控溅射方法在玻璃基底上制备了非晶Si/SiO₂超晶格.利用透射电子显微镜 (TEM) 和X射线衍射技术对其结构进行了分析,结果表明,超晶格中Si层大部分区域为非晶相,局域微区呈现有序结构,其厚度由1.8—3.2nm变化,SiO₂层厚度为4.0nm.并采用多种光谱测量技术,如吸收光谱、光致发光光谱和Raman光谱技术,对该结构的光学性质进行了系统研究.结果表明,随纳米Si层厚度的减小,光学吸收边以及光致荧光峰发生明显蓝移,Raman峰发生展宽,即观测到明显的量 关键词：     

4HeH+核间距的实验测定

用MeV量级⁴HeH⁺在超薄无衬碳膜中的库仑爆炸,获得高频离子源产生⁴HeH⁺核间距的实测值为0.094±0.003nm.发现⁴HeH⁺与H⁺₂,H⁺₃不一样,其核间距大小和离子源种类及离子源参数有密切关系,并从⁴HeH⁺的形成机理与形成条件,解 关键词：     

外磁场中单畴反铁磁颗粒的宏观量子效应

用瞬子方法研究了外加磁场对单畴双轴反铁磁颗粒宏观量子效应的影响. 当外磁场沿易磁化方向时,简并基态中的一个能量抬高,变为亚稳态,其隧穿衰变率随外磁场增大;当外磁场沿中间磁化方向时,能级的隧穿劈裂随外磁场的变化而振荡.从而提出一种观察单畴反铁磁颗粒中宏观量子相干和隧穿现象的实验方法.     

螺线管场下强流相对论电子束焦斑尺寸的限制

 分析了螺线管场下影响强流相对论电子束聚焦的主要因素,并给出了各影响因素所限制的最小焦斑。计算结果表明,当发射度和能散度的值分别控制在0.397mm× rad和1%以内, 单个螺线管磁轴的偏心不大于0.54mrad,初始注入束偏心不大于1mrad时,对于20MeV、3kA的电子束和15MeV、2.5kA的电子束,最终打靶束焦斑均可小于1.5mm。