三(三甲基硅烷)亚磷酸酯添加剂改善高镍三元正极材料的高电压循环性能

研究了三(三甲基硅烷)亚磷酸酯(TMSP)添加剂对高镍三元正极材料Li Ni_(0.83)Mn_(0.05)Co_(0.12)O_2(LNMC811)高电压循环性能的影响。结合电化学表征、理论计算、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线光电子能谱(XPS)、X射线衍射(XRD)等方法研究发现,在高电位(4.5 Vvs Li/Li~+)下,TMSP添加剂能够在LNMC811正极表面被氧化分解,生成一层富含导锂离子性能好的硅酸盐和电化学稳定的无机碳酸锂,且电解液主要分解产物(有机碳酸锂和氟化锂)含量较少的正极固体电解质界面(CEI)膜;分析表明覆盖在正极表面的薄而均匀的CEI膜,能够很好的降低充放电过程的极化电压,隔离电解液和正极的接触,减少电解液的分解,抑制金属离子的溶出,稳定正极晶体结构,使LNMC811材料能够在4.5 V(vs Li/Li~+)高电压循环时仍然保持良好的循环性能和倍率性能。     

新型DPA类似物的合成及其对结核杆菌H37 Rv的抑菌性能

以D-阿拉伯构型的双环\[3.1.0\]己基胺和脂质醛为原料,通过还原胺化合成了6个新的癸异戊烯磷酰基-β-D-阿拉伯呋喃糖（DPA）类似物,其结构经¹H NMR、 ¹³C NMR和HR-MS(ESI)表征。利用MTT法检测了化合物对结核杆菌H37Rv的抑菌性能。结果显示化合物在1 mg·mL^-1时没有明显抑菌活性。     

In situ Deposition of ‘Naked’ Gold Nanoparticles Supported on Silica Spheres as Recyclable Catalysts in Styrene Epoxidation

Tlie rational designs of particle size, morphology and surface states of the Au nanoparticles(AuNPs) are crucial for Au nanocatalyst. We herein report a method to synthesize the silica microspheres supported AuNPs(ca.1 nm) and their application in controlling the reaction conversion and selectivity in styrene epoxidation. Surfactant-ftee AuNPs deposited on silica microspheres were in situ fabricated with aid of the Ag nanoparticles (AgNPs) as sacrificial template by galvanic replacement reaction, leading to AuNPs/SiO2 catalyst directly without any post-treatment to expose crystal facets.A high conversion of 46.7% and selectivity of 91.7% to styrene oxide was achieved with H2O2 as oxidant in ethanol. The solid catalyst could be reused at least 10 reaction cycles without significant decrease in activity and selectivity. This study not only supplies an active, recoverable catalyst for styrene oxidation with green oxidant and solvent, but also demonstrates that the silica microspheres functionalized with thiol groups have a superior ability in stabilizing noble metal nanoparticles even without any surfactant.     

微通道介电泳颗粒流动中的焦耳热分析

微通道中的介电泳颗粒流动是芯片实验室装置的最重要应用之一.生物和医学领域的实际应用中,为获得足够的介电泳颗粒控制能力,在高电导率的电解溶液上施加强电场,而这将引起溶液温度的明显升高.本文建立了介电泳颗粒流动中的电场分布和焦耳热效应的理论模型.对介电泳微通道中电解溶液中的电场与温度场进行了计算,分析了介电泳作用下产生的焦耳热对微通道内温度场的影响.     

Total Routhian Surface Calculations on Hf Isotopes

The two-dimensional total routhian surface calculations have been carried out to stud）, the triaxial superdeformed structure of a neutron-rich nucleus ^173 Hf firstly. In particular the effects of the rotational frequency ω and pairing-energy gap parameter A are discussed in detail in the course of shaping its triaxial superdeformation; additionally the neutron-shell correction energy is analyzed with emphasis in the confirmed triaxial superdeformed nucleus ^173Hf. Finally, more systematical results have been investigated for some confirmed superdeformed nuclei experimentally and a few predicted triaxial superdeformed nuclei theoretically with quadropole deformation ε2 ≈0.4 and triaxial deformation γ≈20° or 30° in the Z = 72 region.     

Generation of Entanglement for Coherent Excitonic States in Coupled Quantum Dots in a Microcavity

We investigate the generation of entanglement of coherent excitonic states in coupled quantum dots placed in a cavity by meaning of the state preparation fidelity [Nature （London） 404 （2002） 256; Phys. Rev. A 65 （2002） 012107; J. Uffink, Phys. Rev. Lett. 88 （2002） 230406.] The effect of the number of excitons and the coherent intensity ｜α｜ of the cavity field on the entanglement is also studied.     

Formation Mechanisms of Electrical Conductivity and Optical Properties of ZnO:N Film Produced by Annealing Treatment

The effects of annealing on the chemical states of N dopant, electrical, and optical properties of N-doped ZnO film grown by molecular beam epitaxy (MBE) are investigated. Both the as-grown ZnO:N film and the film annealed in N₂ are of n-type conductivity, whereas the conductivity converts into p-type conductivity for the film annealed in O₂. We suggest that the transformation of conductivity is ascribed to the change in ratio of the N molecular number on O site (N₂)_O to the N atom number on O site (N_O) in ZnO:N films under the various annealed atmosphere. For the ZnO:N film annealed in N₂, the percentage content of (N₂)_O is larger than that of N_O, i.e.the ratio >1, resulting in the n-type conductivity. However, in the case of the ZnO:N film annealed in O₂, the percentage content of (N₂)_O is fewer than that of N_O, i.e., the ratio <1, giving rise to the p-type conductivity. There is an obvious difference between low-temperature (80K) PL spectra of ZnO:N film annealed in N₂ and that of ZnO:N film annealed in O₂. An emission band located at 3.358eV is observed in the spectra of the ZnO:N film after annealed in N₂, this emission band is due to donor-bound exciton (D⁰X). After annealed in O₂, the PL of the donor-bound exciton disappeared, an emission band located at 3.348eV is observed, this emission band is assigned to acceptor-bound exciton (A⁰X).     

Synchronization and Pattern Dynamics of Coupled Chaotic Maps on Complex Networks

The synchronization and pattern dynamics of coupled logistic maps on a certain type of complex network, constructed by adding random shortcuts to a regular ring, is investigated. For parameters where an isolated map is fully chaotic, the defect turbulence, which is dominant in the regular network, can be tamed into ordered periodic patterns or synchronized chaotic states when random shortcuts are added, and the patterns formed on the complex network can be grouped into two or three branches depending on the coupling strength.     

蓝宝石衬底上GaN/AlxGa1-xN超晶格插入层对AlxGa1-xN外延薄膜应变及缺陷密度的影响

室温300K下,由于Al_xGa_1-xN的带隙宽度可以从GaN的3.42eV到AlN的6.2eV之间变化,所以Al_xGa_1-xN是紫外光探测器和深紫外LED所必需的外延材料.高质量高铝组分Al_xGa_1-xN材料生长的一大困难就是Al_xGa_1-xN与常用的蓝宝石衬底之间大的晶格失配和热失配.因而采用MOCVD在GaN/蓝宝石上生长的Al_xGa_1-xN薄膜由于受张应力作用非常容易发生龟裂.GaN/Al_xGa_1-xN超晶格插入层技术是释放应力和减少Al_xGa_1-xN薄膜中缺陷的有效方法.研究了GaN/Al_xGa_1-xN超晶格插入层对GaN/蓝宝石上Al_xGa_1-xN外延薄膜应变状态和缺陷密度的影响.通过拉曼散射探测声子频率从而得到材料中的残余应力是一种简便常用的方法,Al_xGa_1-xN外延薄膜的应变状态可通过拉曼光谱测量得到.Al_xGa_1-xN外延薄膜的缺陷密度通过测量X射线衍射得到.对于具有相同阱垒厚度的超晶格,例如4nm/4nm,5nm/5nm,8nm/8nm的GaN/Al_0.3Ga_0.7N超晶格,研究发现随着超晶格周期厚度的增加Al_xGa_1-xN外延薄膜缺陷密度降低,Al_xGa_1-xN外延薄膜处于张应变状态,且5nm/5nmGaN/Al_0.3Ga_0.7N超晶格插入层Al_xGa_1-xN外延薄膜的张应变最小.在保持5nm阱宽不变的情况下,将垒宽增大到8nm,即十个周期的5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层使Al_xGa_1-xN外延层应变状态由张应变变为压应变.由X射线衍射结果计算了Al_xGa_1-xN外延薄膜的刃型位错和螺型位错密度,结果表明超晶格插入层对螺型位错和刃型位错都有一定的抑制效果.透射电镜图像表明超晶格插入层使位错发生合并、转向或是使位错终止,且5nm/8nmGaN/Al_0.3Ga_0.7N超晶格插入层导致Al_xGa_1-xN外延薄膜中的刃型位错倾斜30°左右,释放一部分压应变.     

以BAlq为主体的高效高色纯度的红色有机电致磷光器件

以铱配合物红色磷光体Ir(piq)₂(acac)为掺杂剂,制备了基于BAlq材料的红色电致磷光器件,其结构为ITO/NPB(30nm)/Ir(piq)₂(acac):BAlq(25nm)/BCP(13nm)/Alq₃(35nm)/LiF(1nm)/Al(1000nm),当掺杂浓度为8%的时候,器件发光的色坐标为(x=0.67,y=0.32),基本满足了全色显示对红色发光的要求。在电压为16V时,器件达到最高亮度9380cd/m²。在电流密度为5.45mA/cm²时,外量子效率达到最大5.7%。由于磷光体Ir(piq)₂(acac)的磷光寿命较短,所以器件在高电流密度下,仍然保持较高的外量子效率。电流密度为100mA/cm²时,外量子效率仍然维持在4.7%。进一步研究表明在器件中短程的Dexter能量传递以及红光染料对空穴的直接捕获两种机制同时存在。