Reaction field model with free volume for the NMR chemical shift of129Xe dissolved in organic solvents

The temperature dependence of the NMR chemical shift of¹²⁹Xe dissolved in liquid alkanes is examined in the context of the reaction field model. An essential feature of the theory is the inclusion of the temperature dependence of the density of thesolvent. The theory of free volume for liquids is incorporated into the reaction field model to account for this temperature dependence. Comparison of the theory with previously reported measurements indicates the sensitivity of the¹²⁹Xe chemical shift to the free volume of liquids. Incorporation of free volume improves the agreement between measurement and theory for branched alkane solvents, and resolves the origin of the 62 ppm intercept in the plot of reaction field as a function of¹²⁹Xe chemical shift for the n-alkanes.     

On exact order estimates of N-widths of classes of functions analytic in a simply connected domain

In the spaces E _q(Ω), 1 < q < ∞, introduced by Smirnov, we obtain exact order estimates of projective and spectral n-widths of the classes W ^r E _p(Ω) and W ^r E _p(Ω)Ф in the case where p and q are not equal. We also indicate extremal subspaces and operators for the approximative values under consideration.     

Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing

Two types of excitons, localized at opposite interfaces and characterized by different magnitudes of the exchange interactions at the same radiation energies, are simultaneously in type-II GaAs/AlAs superlattices. It is shown that the additional long-wavelength luminescence line in superlattices grown with growth interruptions after the GaAs layers is due to the recombination of an exciton localized at an inverted interface in regions where the quantum-well width is increased by one monolayer. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 10, 701–706 (25 November 1996)     

SrZrO3-based proton conducting materials with La additions

The behaviour of La-containing strontium zirconate based ceramics is revised. La additions contribute to improve the sinterability of these materials, but transport properties are also affected. Sr_1−xLa_xZrO_3+δ show some unusual changes in transport properties when samples are exposed to H₂-containing atmospheres and then reoxidized. Nevertheless, the transport properties of (Sr,La)(Zr,Y)O_3−δ, are still mainly dependent on Y additions, at least for cases when the fraction of Y exceeds the fraction of La. In addition, lanthanum causes significant changes in lattice parameters. A combination of conductivity measurements in different atmospheres, ion blocking experiments, and emf measurements has been used to demonstrate that electron hole conductivity increases with temperature, and the protonic contribution drops. The transport properties at temperatures lower than about 800 °C might be affected by structural changes. Paper presented at the 2nd Euroconference on Solid State Ionics, Funchal, Madeira, Portugal, Sept. 10–16, 1995     

Turbulence modelling of the shear layers in the trailing edge region of a modern rear-loaded airfoil at incidence

After carefull analysis in a turbulent zero-pressure gradient flow, various simple algebraic turbulence models were applied to the almost separated flow on the upperside of an airfoil at incidence. The Johnson-King and Horton non-equilibrium (or rate equation) models give clearly improved results.     

Modeling the pressure dependence of DC bias voltage in asymmetric,capacitive RF sheaths

A semianalytical model for capacitively coupled radio frequency (RF) sheaths of asymmetric (unequal electrode area) systems has been developed. It can be applied in the high-frequency (ω > ω _pi) regime at different pressures. An analytical approximation to the pressure-dependent ion density profile is used. The time-varying electric field and potential within the sheath are obtained by solving Poisson's equation. The current balance and zero net DC current conditions are applied to solve for the RF sheath parameters and DC bias voltage. The DC voltage ratio between the powered and grounded electrode sheaths increases as the pressure decreases, which results in a larger DC bias voltage at lower pressures