Manufacturing cell formation using similarity coefficients and a parallel genetic TSP algorithm: Formulation and comparison

Many algorithms have been proposed to form manufacturing cells from component routings. However, many of these do not have the capability of solving large problems. We propose a procedure using similarity coefficients and a parallel genetic implementation of a TSP algorithm that is capable of solving large problems of up to 1000 parts and 1000 machines. In addition, we also compare our procedure with many existing procedures using nine well-known problems from the literature.

The results show that the proposed procedure compares well with the existing procedures and should be useful to practitioners and researchers.     

A note on the complex semi‐definite matrix Procrustes problem

This note outlines an algorithm for solving the complex ‘matrix Procrustes problem’. This is a least‐squares approximation over the cone of positive semi‐definite Hermitian matrices, which has a number of applications in the areas of Optimization, Signal Processing and Control. The work generalizes the method of Allwright (SIAM J. Control Optim. 1988; 26 (3):537–556), who obtained a numerical solution to the real‐valued version of the problem. It is shown that, subject to an appropriate rank assumption, the complex problem can be formulated in a real setting using a matrix‐dilation technique, for which the method of Allwright is applicable. However, this transformation results in an over‐parametrization of the problem and, therefore, convergence to the optimal solution is slow. Here, an alternative algorithm is developed for solving the complex problem, which exploits fully the special structure of the dilated matrix. The advantages of the modified algorithm are demonstrated via a numerical example. Copyright © 2007 John Wiley & Sons, Ltd.     

The (1+1) Dimensional Dirac Equation With Pseudoscalar Potentials: Path Integral Treatment

The supersymetric path integrals in solving the problem of relativistic spinning particle interacting with pseudoscalar potentials is examined. The relative propagator is presented by means of path integral, where the spin degrees of freedom are described by odd Grassmannian variables and the gauge invariant part of the effective action has a form similar to the standard pseudoclassical action given by Berezin and Marinov. After integrating over fermionic variables (Grassmannian variables), the problem is reduced to a nonrelativistic one with an effective supersymetric potential. Some explicit examples are considered, where we have extracted the energy spectrum of the electron and the wave functions. PACS numbers: 03.65. Ca-Formalism, 03.65. Db-Functional analytical methods, 03.65. Pm-Relativistic wave equations.     

Conditional distributions of record values and characterizations of distributions

We consider some regression relations for record values X(n), n > 0, generated by a sequence of independent random variables X₁, X₂, X₃,... with a common continuous cumulative distribution function F(x). New characterizations of distributions based on regression properties of record values are obtained. Bibliography: 7 titles. __________ Translated from Zapiski Nauchnykh Seminarov POMI, Vol. 339, 2006, pp. 5–14.     

On a certain nonlocal problem for a hyperbolic equation

The author proves the existence and uniqueness of a generalized solution of a nonlocal problem with an integral condition for a hyperbolic equation with n spatial variables. This work is a continuation of the studies started in [3–5], where the solvability problem of nonlocal problems with an integral condition was studied for hyperbolic equations on the plane. __________ Translated from Sovremennaya Matematika i Ee Prilozheniya (Contemporary Mathematics and Its Applications), Vol. 33, Suzdal Conference-2004, Part 1, 2005.     

Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors

The energy levels of neutral anion (V_A) and cation (V_C) vacancies and antisite defects are calculated for the anion C_A and cation A_C sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be E_av ^abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of V_A, V_C and antisite C_A, A_C defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 17–22, May, 2007.