Simultaneous best approximation by three polynomials

Let [a, b] be any interval and let p₀, p₁, p_k be any three polynomials of degrees 0, 1, k, respectively, where k 2. A set of necessary and sufficient conditions for the existence of an f in C[a, b] such that p_i is the best approximation to f from the space of all polynomials of degree less than or equal to i, for all i = 0, 1, k, is given.     

Ag-induced atomic structures on the Si(110) surface

We report the results of STM investigation of the initial stage of Ag adsorption on an Si(110) surface. At 0.21 ML Ag coverage, the size and orientation of the unit cell correspond to the parameters of a 16 × 2 unit cell of clean Si(110) surface. With increasing of the Ag coverage up to 0.42 ML, the type of surface reconstruction changes to a 4 × 1-Si(110)-Ag structure. The text was submitted by the authors in English.     

Synthesis and fungicidal activity of S-amino derivatives of O-alkyldithiocarbonic acids

S-Amino derivatives of O-alkyldithiocarbonic acid were prepared by oxidative condensation of certain alkaloids with sodium xanthates. Some of the compounds synthesized exhibit fungicidal activity.     

Halogenation of N-substituted para-quinone monoimine and para-quinone monooxime esters: VI. Regular trends in chlorination and bromination of N-arylsulfonyl-1,4-benzoquinone monoimines alkyl-substituted in the quinoid ring

Reactions of halogens with N-arylsulfonyl-1,4-benzoquinone monoimines occur with the formation of a halogenonium ion that either transforms into a carbocation where the first halogen atom adds to the carbon in the ortho-position relative to the carbonyl carbon, or the halogenonium ion adds directly the second halogen atom.     

The flow of a variable viscosity fluid between parallel plates with shear heating

A model for the flow of a fluid through a channel with parallel plates is investigated. The channel is narrow, so that the lubrication approximation may be applied. The channel walls are maintained at a constant temperature. Shear heating effects are included and the fluid viscosity decreases exponentially with temperature. When the flow is driven solely by shear stress or imposed velocity at the top, analytical progress is possible. When pressure gradient also drives the flow the problem is solved numerically.     

An improved approach for hydrogen analysis in metal samples using single laser-induced gas plasma and target plasma at helium atmospheric pressure

We report in this paper the results of an experimental study on hydrogen analysis of solid samples in high pressure helium ambient gas employing the basic scheme of laser induced breakdown spectroscopy (LIBS). It is shown that the metastable excited state of helium atom can be utilized to induce delayed excitation of the ablated hydrogen atoms, and thereby avoid the Stark broadening effect as well as overcoming the undesirable mismatch effect, which are responsible for inefficient excitation respectively. It is further demonstrated that for samples of high boiling-point materials such as zircaloy, successful hydrogen analysis can be achieved by a newly introduced double excitation technique employing single laser realized in a modified configuration of the conventional LIBS method. PACS 51-52     

Spatially resolved Raman spectroscopy evaluation of residual stresses in 3C-SiC layer deposited on Si substrates with different crystallographic orientations

Raman scattering studies were performed on hot-wall chemical vapor deposited (heteroepitaxial) silicon carbide (SiC) films grown on Si substrates with orientations of (1 0 0), (1 1 1), (1 1 0) and (2 1 1), respectively. Raman spectra suggested that good quality cubic SiC single crystals could be obtained on the Si substrate, independent of its crystallographic orientation. Average residual stresses in the epitaxially grown 3C-SiC films were measured with the laser waist focused on the epilayer surface. Tensile and compressive residual stresses were found to be stored within the SiC film and in the Si substrate, respectively. The residual stress exhibited a marked dependence on the orientation of the substrate. The measured stresses were comparable to the thermal stress deduced from elastic deformation theory, which demonstrates that the large lattice mismatch between cubic SiC and Si is effectively relieved by initial carbonization. The confocal configuration of the optical probe enabled a stress evaluation along the cross-section of the sample, which showed maximum tensile stress magnitude at the SiC/Si interface from the SiC side, decreasing away from the interface in varied rate for different crystallographic orientations. Defocusing experiments were used to precisely characterize the geometry of the laser probe in 3C-SiC single crystal. Based on this knowledge, a theoretical convolution of the in-depth stress distribution could be obtained, which showed a satisfactory agreement with stress values obtained by experiments performed on the 3C-SiC surface.