Electronic structure and optical absorption spectra of CdSe covered with ZnSe and ZnS epilayers

Using the first-principles methods we compute the electronic structure and the absorption spectra for a wurtzite CdSe (0001) slab covered with zincblende ZnSe and ZnS epilayers. For each structure we compute the DOS and the imaginary part of the dielectric function. We find that the semiconductor passivation shifts the ‘near Fermi-level’ states of the bare CdSe slab down to lower energy levels. The migration suggests the decrease of surface effects and energy loss. We observe the substantial reduction of the abnormal peaks in the absorption spectra of the bare CdSe slab, which seems to be a consequence of the DOS migration. This is consistent with the experimental results that a proper passivation enhance the luminescence efficiency. We also study the case that the epilayer surface is terminated with PH₃ and find the PH₃ passivation also reduces the surface state to some extent.     

Supercapacitive electrochemical performance of graphene-containing carbon aerogel prepared using polyethyleneimine-modified graphene oxide

Graphene-containing carbon aerogel was prepared by a sol–gel polymerization of resorcinol-formaldehyde (RF) method using polyethyleneimine (PEI)-modified chemically exfoliated grapheme oxide, and its electrochemical performance as an electrode for supercapacitor was examined. The effect of PEI in the preparation of RFGO (resorcinol-formaldehyde and graphene oxide) solution on the physicochemical and electrochemical properties of graphene-containing carbon aerogel (CAPG) was investigated. For comparison, graphene-containing carbon aerogel was prepared using PEI-free graphene oxide (CAG). Graphene-free carbon aerogel (CA) was also prepared. CAPG showed the highest BET surface area (792 m²/g) and the largest pore volume (1.64 cm³/g) with well-developed porous structure. Various electrochemical measurements revealed that CAPG showed high specific capacitance (205 F/g), low equivalent series resistance (0.55 Ω), and superior capacitive behavior. The PEI-modified graphene oxide played an important role in enhancing physicochemical properties and supercapacitive electrochemical performance of CAPG.     

Toughening poly(lactic acid) (PLA) through in situ reactive blending with liquid polybutadiene rubber (LPB)

Abstract

Liquid polybutadiene rubber (LPB) was blended with poly(lactic acid) (PLA) through reactive and non-reactive routes to enhance the toughness of the PLA. The reactively blended PLA (PBR10) was prepared by melt blending the PLA with the LPB in the presence of dicumyl peroxide (DCP), a radical initiator, while the PB10 was just melt blended without the DCP. Fourier transform infrared (FTIR) spectra and wide-angle X-ray diffraction (WAXD) patterns were used to study the molecular structure of the blends. Properties were investigated through universal testing machine (UTM), differential scanning calorimetry (DSC), thermogravimetric analysis (TGA), scanning electron microscope (SEM) analysis, and rheological measurements. The results indicated that the radical crosslinking by the DCP could increase the compatibility between the PLA and LPB and disperse the rubber particles at the nanoscale in the PLA matrix. As a result, the toughness and melt viscosity of the PLA was significantly enhanced through the reactive blending, which is promising for the practical application of the modified PLA in the area of packaging.     

Ultrawidely tunable single-mode fiber acousto-optic filter

A single-mode fiber (SMF) acousto-optic tunable filter (AOTF) with a tuning range of more than 300 nm is demonstrated. The SMF used in the experiment has a ring of symmetric holes within the cladding, which causes a larger mode-index difference between the first and the second higher-order antisymmetric modes than those of a conventional SMF. As a result, the difference in beatlengths between the core mode and the higher-order modes is highly increased, which makes it possible for the SMF AOTF to exhibit a single resonance peak in the transmission spectrum over the wavelength range of 1.3-1.6 μm for given acoustic frequencies of 3.1-3.8 MHz.     

Efficient high-power frequency doubling of distributed Bragg reflector tapered laser radiation in a periodically poled MgO-doped lithium niobate planar waveguide

We report on efficient single-pass, high-power second-harmonic generation in a periodically poled MgO-doped LiNbO3 planar waveguide using a distributed Bragg reflector tapered diode laser as a pump source. A coupling efficiency into the planar waveguide of 73% was realized, and 1.07 W of visible laser light at 532 nm was generated. Corresponding optical and electro-optical conversion efficiencies of 26% and 8.4%, respectively, were achieved. Good agreement between the experimental data and the theoretical predictions was observed.     

Graphene nanosheets: Ultrasound assisted synthesis and characterization

A facile sonochemical route for the synthesis of graphene nanosheets via reduction of graphene oxide (GO) has been reported. The synthesized graphene sheets are characterized using UV–vis spectra, Fourier transform infra-red (FT-IR) spectra, transmission electron microscope, X-ray photoelectron spectra (XPS) and Raman spectroscopic techniques. The UV–vis spectroscopy results showed that the absorption peak was red shifted due to the reduction of GO into graphene. FT-IR and XPS spectra revealed the removal of oxygenated functional groups in graphene after the reduction process. Raman spectra confirmed the restoration of new sp² carbon domains in graphene sheets after the reduction. The sonochemical approach for the synthesis of graphene nanosheets is relatively fast, cost-effective and efficient as compared to other methods.     

Molecular dynamics simulation study on graphene-nanoribbon-resonators tuned by adjusting axial strain

A tunable graphene-nanoribbon (GNR)-resonator was investigated via classical molecular dynamics simulations. Resonance frequencies increased with increasing externally applied gate-force and axial-strain, and could be tuned above several hundred GHz. Tunable resonance frequencies achieved from the gate force were higher than those achieved from the axial-strain. The operating frequencies of GNR-resonators without axial-strain or with small axial-strains were most widely tuned by the gate, and almost linearly increased with increasing mean deflection. As the axial strain increased, the tunable ranges of the GNR-resonators were exponentially decreased, although the operating frequencies increased. GNR-resonators without axial-strain could be applied to wide-range-tuners, whereas GNR-resonators with high axial-strain could be applied to high-frequency-fine-tuners.     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.