离子辅助沉积中离子束流密度的作用

测量了End-Hall离子源在不同条件下的离子束流密度，在不同离子束流密度下进行了Ar离子辅助沉积ZrO2薄膜的实验，研究了离子束流密度对薄膜折射率、晶相的影响.根据动量传递模型分析了离子束流密度对薄膜折射率的作用;根据热尖峰理论证明了一定条件下离子束流密度不会影响薄膜晶体结构.     

KSrBP2O8:RE(RE=Eu2+,Tb3+,Eu3+)荧光粉的制备与发光性能研究

采用高温固相反应法制备了KSrBP2O8:RE(RE=Eu2+,Tb3+,Eu3+)系列荧光粉。利用X射线衍射仪对样品的物相结构进行了分析,结果表明:稀土离子的掺入没有改变荧光粉的主晶相。利用荧光光谱仪对样品的发光性能进行了测试,发现在近紫外光激发下掺杂Eu2+离子的样品具有宽带发射峰,最强发射位于450 nm左右,对应于Eu2+离子的4f65d1→4f7辐射跃迁。随着Eu2+掺杂量的增加,发射光从蓝光逐渐转变到蓝白光。另外,KSrBP2O8:Tb3+和KSrBP2O8:Eu3+能够在近紫外光激发下分别发射出绿光和红光,其最佳掺杂浓度分别为0.04%和0.08%(摩尔分数)。     

萧山围垦农区家栖小型兽类生态研究

1985年4月至1993年5月，作者采用侠日法对萦山围垦农区家栖小型兽类生态进行了研究.结果表明:构成该地家栖小替群落的主要种类有小家鼠、奥的和揭家鼠等，以小家鼠为优势种，其次是奥晌，不同类型的住房中群落组成存在差异;该地家栖小兽群落可分为两种类型，即草房平房的小家鼠—褐家鼠群落型和楼房平房的小家鼠—奥晌群落型，并且随栖息地的变化，小兽群落由前者逐渐向后者演替;不同群落中的小兽种类数t季节消长规律存在差异.     

萧山围垦农区家栖小型兽类生态研究

1985年4月至1993年5月,作者采用铗日法对萧山围垦农区家栖小型兽类生态进行了研究.结果表明:构成该地家栖小兽群落的主要种类有小家鼠、臭(鼠句)和褐家鼠等,以小家鼠为优势种,其次是奥(鼠句),不同类型的住房中群落组成存在差异;该地家栖小兽群落可分为两种类型,即草房平房的小家鼠——褐家鼠群落型和楼房平房的小家鼠——臭(鼠句)群落型,并且随栖息地的变化,小兽群落由前者逐渐向后者演替,不同群落中的小兽种类数量季节消长规律存在差异.     

无铆连接模具参数对异种金属板料接头成形的影响

为了研究无铆连接模具参数对 304 不锈钢和 AL6061 板料接头成形的影响，基于 DEFORM-2D 建立了有限元模型，分析了凹模深度、凹槽深度和凸模直径三个主要模具参数对接头成形的影响．研究结果表明，凹模深度越大，越有利于下板料变形，反之，则有利于上板料变形．当凹模直径一定时，凹槽深度和凸模直径过小不利于形成互锁，而凹槽深度不宜过大，避免出现充不满现象，凸模直径过大导致接头颈厚值过小．通过正交试验发现，对接头成形的影响程度从大到小依次为凸模直径、凹槽深度和凹模深度，确定了最优模具参数，并通过无铆连接实验验证了正交试验的可靠性．此外，通过剪切实验获得了接头最大剪切失效载荷为 1.8 kN．     

High magnetic field helicon plasma discharge for plasma-wall interaction studies

正Dear Editors,Plasma-Wall Interactions(PWIs)are important for the development of magnetic confinement fusion devices such as International Thermonuclear Experimental Reactor(ITER),as they can release impurities into the plasma,erode the surfaces,or produce retention of fuel in the wall,among     

The chemistry and thermal stability of HfTaO/Si interface by x‐ray photoelectron spectroscopy

The chemistry and thermal stability of HfTaO/Si interface as a function of annealing temperature have been investigated by x‐ray photoelectron spectroscopy. For the as‐deposited sample, the formation of Hf‐silicate bond is observed on Hf 4f core‐level spectra, which contributes to bulk HfO₂ and SiO₂. Besides, the suboxide of tantalum (Ta⁺¹) is formed at the interface at room temperature because of oxygen‐deficient conditions. HfSi₂, Hf_xSi_yO_4, and HfO₂ coexists in interfacial region at 850 °C, meanwhile, an evidence for transforming from the Ta¹⁺ to tantalum oxide (Ta⁵⁺) is verified. The peaks of Hf–O–Si and Hf–O have disappeared, only one peak of Hf silicide remained after the annealing at 950 °C. A stable SiO₂ phase in HfTaO/Si is formed under different annealing conditions. Copyright © 2011 John Wiley & Sons, Ltd.     

The water-soluble indolium-based fluorescence probes for detection of the extreme acidity or extreme alkalinity

In this work, 3,3′-(((1E,1′E)-(H,12H-5,11-methanodibenzo[b,f][1,5]diazocine-2,8-diyl)bis(ethene-2,1-diyl))bis(1,1-dimethyl-1H-benzo[e]indole-3-ium-2,3-diyl))bis(propane-1-sulfonate) (1), 3,3’-(((1E,1′E)-(6H,12H-5,11-methanodibenzo[b,f][1,5]diazocine-2,8-diyl)bis(ethene-2,1-diyl))bis(3,3-dimethyl-3H-indole-1-ium-2,1-diyl))bis(propane-1-sulfonate) (2), 2,2’-((1E,1′E)-(6H,12H-5,11-methanodibenzo[b,f][1,5]diazocine-2,8-diyl)bis(ethene-2,1-diyl))bis(1,3,3-trimethyl-3H-indol-1-ium) iodide (3) and 2,2’-((1E,1′E)-(6H,12H-5,11-methanodibenzo[b,f][1,5]diazocine-2,8-diyl)bis(ethene-2,1-diyl))bis(1,1,3-trimethyl-1H-benzo[e]indol-3-ium) iodide (4) were designed and synthesized by ethylene bridging of the N-substituted indolium salts and the Tröger’s Base (TB) framework. The probes exhibited a longer absorption and emission wavelength and the emission wavelength of them in dichloromethane (DCM) was more than 600 nm, performed a red fluorescence. All of the probes could work on the extreme acidic and the extreme alkaline environments and showed a good liner response in the working pH range. Especially, 2 and 4 were soluble in water and manifested a good pH sensing in a water system. Also, ¹H NMR analysis illustrated how these dyes worked as the pH-sensitive fluorescence probes. In addition, they performed excellent reversibility, high selectivity and good photostability.     

Thin Film Solar Cell Based on ZnSnN2/SnO Heterojunction

In this article, we report the growth of zinc‐tin nitride (ZnSnN₂) thin films as a potential absorber for photovoltaic applications by fabricating a heterojunction of n‐ZnSnN₂/p‐SnO. The performance of the heterojunction has been monitored through selective deposition of top electrode with different materials (Ni/Au or Al). The electron‐transfer process from the ZnSnN₂ layer to the cathode is facilitated by selecting metal electrode with relatively low work function, which also boosts up the electron injection or/and extraction. The diode exhibits a good J–V response in the dark with a rectification ratio of 3 × 10³ at 1.0 V and an ideality factor of 4.2 in particular with Al as the top electrode. Under illumination, the heterostructure solar cell demonstrates a power conversion efficiency of ≈0.37% with an open circuit voltage of 0.25 V and a short circuit current density of 4.16 mA cm^?2. The prime strategies, on how to improve solar cell efficiency concerning band offsets and band alignment engineering are also discussed.