圆窗片表面次级电子倍增效应的数值模拟

基于Monte Carlo模拟算法, 建立了粒子输运模型, 通过对盒形窗内圆窗片表面次级电子倍增现象进行数值仿真, 获得了TE₁₁模非均匀分布电场作用下次级电子倍增的规律. 结果表明: 在微波输入端, 指向窗片表面的磁场力起到了维持次级电子与窗片碰撞的作用, 在电场强度较高的区域倍增剧烈, 有质动力对倍增无贡献; 在微波输出端, 受背离窗片表面磁场力的影响, 在表面静电场较弱的情况下, 次级电子倍增不能发生; 当表面静电场足以维持单面倍增的发生, 随着传输功率的增大, 电子渡越时间增长, 有质动力使得倍增强烈的区域由强电场区逐渐转移到弱电场区域. 对利用外静电场抑制微波输入端次级电子倍增效应的方法进行了数值模拟验证. 关键词： 圆窗片 11模')" href="#">TE₁₁模 次级电子倍增 MonteCarlo模拟     

一种基于声相似律的旋转流体机械噪声声源分离方法

针对管道系统中的流体机械发声问题,提出了一种声源函数与声响应函数的频谱分离方法。该方法以声相似律为基础,分别采用最小均方值多重线性回归方法和高斯滤波获得声源函数和声响应函数。通过算例验证了该方法的有效性,辨识得到的声源函数和声响应函数的相对误差均远小于现有方法。利用该方法分析了自由空间和带管道两种安装条件下轴流风扇的辐射噪声,辨识得到了相应的声源函数、声响应函数和叶尖速度律指数,并对风扇的主要噪声成分进行了分析。     

A facile method for the synthesis of large‐size Ag nanoparticles as efficient SERS substrates

Silver nanoparticles (Ag NPs) enjoy a reputation as an ultrasensitive substrate for surface‐enhanced Raman spectroscopy (SERS). However, large‐scale synthesis of Ag NPs in a controlled manner is a challenging task for a long period of time. Here, we reported a simple seed‐mediated method to synthesize Ag NPs with controllable sizes from 50 to 300 nm, which were characterized by scanning electron microscopy (SEM) and UV–Vis spectroscopy. SERS spectra of Rhodamine 6G (R6G) from the as‐prepared Ag NPs substrates indicate that the enhancement capability of Ag NPs varies with different excitation wavelengths. The Ag NPs with average sizes of ~150, ~175, and ~225 nm show the highest SERS activities for 532, 633, and 785‐nm excitation, respectively. Significantly, 150‐nm Ag NPs exhibit an enhancement factor exceeding 10⁸ for pyridine (Py) molecules in electrochemical SERS (EC‐SERS) measurements. Furthermore, finite‐difference time‐domain (FDTD) calculation is employed to explain the size‐dependent SERS activity. Finally, the potential of the as‐prepared SERS substrates is demonstrated with the detection of malachite green. Copyright © 2016 John Wiley & Sons, Ltd.     

The influence of thermally assisted tunneling on the performance of charge trapping memory

We evaluate the influence of the thermally assisted tunneling (TAT) mechanism on charge trapping memory (CTM) cell performance by numerical simulation, and comprehensively analyse the effects of the temperature, trap depth, distribution of trapped charge, gate voltage and parameters of TAT on erasing/programming speed and retention performance. TAT is an indispensable mechanism in CTM that can increase the detrapping probability of trapped charge. Our results reveal that the TAT effect causes the sensitivity of cell performance to temperature and it could affect the operational speed, especially for the erasing operation. The results show that the retention performance degrades compared with when the TAT mechanism is ignored.     

嫦娥一号干涉成像光谱仪(IIM)2C级数据信息提取

通过分析Chang’E-1卫星所获取的高光谱数据的太阳高度角因素,选取了太阳高度角较高的IIM2C数据进行光谱定标。采用邻域平均法及邻域加权均值法对原始数据进行了杂点、条带修复。由于干涉成像光谱仪CCD阵列增益畸变以及它的自身问题使得干涉影像存在横向响应不均一性,提出采用基于子空间最大特征值法进行校正,结果影像亮度统计其强度表现均一,符合自然图像特征,并采用自编程序进行几何校正。运用国际上较为成熟的经验线性法对Chang’E-1IIM 2C数据进行绝对定标;与此同时,为了修正线性定标的偏置系数及降低数据噪声,首次采用自适应小波变换法对辐射定标后数据进行后处理,确定了IIM2C数据可用波段。通过对比国际标准定标点数据,制订了嫦娥IIM2C数据分析方案,完成了第一幅完整的Chang’E-1IIM 2C月球正面反射率影像。     

RIBLL终端LASCAR闪烁体阵列探测器研制进展

介绍了RIBLL终端LASCAR闪烁体阵列探测器的工作原理和结构特点. 描述了为满足放射性核束实验的要求而对阵列所作的重要改进. 给出了LASCAR构型优化改造的工作设想和实施步骤. The principles and structure characteristics of LASCAR scintillator array detector at RIBLL terminal are described. Special emphases are laid upon the latest progress for the development of LASCAR array detector to meet the requirements of the RIB experiments. The working plan and steps for optimizing configuration of the LASCAR multi unit neutron scintillator array detector are also presented.     

单色仪转角重复精度的相位板衍射准直方法测量

为准确测量上海光源软X射线谱学显微光束线采用的变包含角平面光栅单色仪的转角重复精度,提出了一种新的基于相位板衍射准直技术的测量方法.该方法将半导体激光单模光纤和相位板衍射准直技术结合起来,利用面阵CCD采集图像,通过测量光斑的位移变化确定平面镜和光栅的角度变化.实验表明.该方法可以测量掠入射情况下单色仪联动时的转角重复精度,测量精度可达士0.1",此测量精度优于同等实验条件下的商用ELCOMAT 3000自准直仪的测量精度.     

Photocatalytic degradation of methyl orange by nano-TiO_2 thin films prepared by RF magnetron sputtering

Nano-TiO2 thin films are deposited by radio frequency （RF） magnetron sputtering using TiO2 ceramic target and characterized by X-ray diffractometer, atomic force microscope, and ultraviolet-visible spectrophotometer. The photocatalytic activity is evaluated by light-induced degradation of methyl orange solutions （5, 10, and 20 ppm） using a high pressure mercury lamp as the light source. The film is amorphous, and its energy gap is 3.02 eV. The photocatalytic degradation of methyl orange solution is the first-order reaction and the apparent reaction rate constants are 0.00369, 0.0024, and 0.00151 for the methyl orange solution concentrations of 5, 10, and 20 ppm, respectively.     

Quantum Monte Carlo study on the phase transition for a generalized two-dimensional staggered dimerized Heisenberg model

In order to gain a deeper understanding of the quantum criticality in the explicitly staggered dimerized Heisenberg models,we study a generalized staggered dimer model named the J0-J1-J2 model,which corresponds to the staggered J-J ' model on a square lattice and a honeycomb lattice when J1/J0 equals 1 and 0,respectively.Using the quantum Monte Carlo method,we investigate all the quantum critical points of these models with J1/J0 changing from 0 to 1 as a function of coupling ratio α=J2/J0.We extract all the critical values of the coupling ratio αc for these models,and we also obtain the critical exponents ν,β/ν,and η using different finite-size scaling anstz,.All these exponents are not consistent with the three-dimensional Heisenberg universality class,indicating some unconventional quantum ciritcial points in these models.     

高In组分InGaNAs/GaAs量子阱的生长及发光特性

采用分子束外延技术(MBE)在Ga As衬底上外延生长高In组分(40%)In Ga NAs/Ga As量子阱材料,工作波长覆盖1.3~1.55μm光纤通信波段。利用室温光致发光(PL)光谱研究了N原子并入的生长机制和In Ga NAs/Ga As量子阱的生长特性。结果表明:N组分增加会引入大量非辐射复合中心;随着生长温度从480℃升高到580℃,N摩尔分数从2%迅速下降到0.2%;N并入组分几乎不受In组分和As压的影响,黏附系数接近1;生长温度在410℃、Ⅴ/Ⅲ束流比在25左右时,In_(0.4)Ga_(0.6)N_(0.01)As_(0.99)/Ga As量子阱PL发光强度最大,缺陷和位错最少;高生长速率可以获得较短的表面迁移长度和较好的晶体质量。