随机参数Duffing系统中的随机混沌及其延迟反馈控制

研究了谐和激励下含有界随机参数Duffing系统(简称随机Duffing系统)中的随机混沌及其延迟反馈控制问题.借助Gegenbauer多项式逼近理论，将随机Duffing系统转化为与其等效的确定性非线性系统.这样，随机Duffing系统在谐和激励下的混沌响应及其控制问题就可借等效的确定性非线性系统来研究.分析阐明了随机混沌的主要特点，并采用Wolf算法计算等效确定性非线性系统的最大Lyapunov指数，以判别随机Duffing系统的动力学行为.数值计算表明，恰当选取不同的反馈强度和延迟时间，可分别达到抑制或诱发系统混沌的目的，说明延迟反馈技术对随机混沌控制也是十分有效的. 关键词： 随机Duffing系统 延迟反馈控制 随机混沌 Gegenbauer多项式     

Effects of pulse chirp on supercontinuum produced in dispersion decreasing fibre

The supercontinuum (SC) source plays a key role in wavelength division multiplexing over the optical time division multiplexing (WDM/OTDM) transmission system. The SC produced in dispersion decreasing fibre (DDF) is wider and flatter than that produced in dispersion shifted fibre (DSF). In this paper, a SC producing process in DDF is numerically simulated, the effects of pump pulse chirp on the SC width and flatness are initially studied and the corresponding theoretical explanations are given. Particularly, we have analysed and compared the evolutions of the SC along DDF pumped by different chirp pulses. Several valuable conclusions are obtained.     

一种减少基于SOA的全光时钟提取码型效应的新方法

全光位时钟提取是3R全光再生的关键技术,本文针对利用基于半导体光放大器注入锁模激光器进行位时钟提取时的码型效应,提出一种利用非线性偏振旋转自稳幅效应减少码型效应的新方法,对40Gb/s的半导体光放大器注入锁模激光器位时钟提取,通过数值模拟计算证明,利用非线性偏振旋转可以有效地减少码型效应的影响.     

利用半导体光放大器进行光脉冲消基座的理论研究

提出了一种利用半导体光放大器(SOA)联合可调谐光滤波器进行高阶孤子压缩消基座的新方法.进行了详尽的理论分析和优化.数值计算表明,在一定条件下,这种方法能够在不展宽脉冲的前提下,对基座进行有效地抑制.     

一种新型高双折射光子晶体光纤特性研究

设计了一种高双折射高非线性光子晶体光纤, 采用全矢量有限元法研究了这种光纤的基模模场、双折射、非线性、有效模面积及色散特性. 数值研究发现, 减小孔间距Λ的大小, 在波长1550 nm 处, 该光纤可获得10^-2 数量级的双折射B, 比普通的椭圆保偏光纤高约两个数量级; 同时, 该光纤可获得42 W^-1·km^-1 的高非线性系数γ. 另外,分别在可见光和近红外波段出现了两个零色散波长, 在波长800–2000 nm 之间具有良好的色散平坦特性. 这种设计为获得高双折射高非线性超平坦色散光子晶体光纤提供了一种新的方法, 该光纤在偏振控制、非线性光学和色散控制方面具有广泛的应用前景. 关键词： 光子晶体光纤 高双折射 高非线性 有限元法     

磁控溅射制备W掺杂VO2/FTO复合薄膜及其性能分析

为了获得相变温度低且热致变色性能优越的光学材料, 室温下在F:SnO₂ (FTO)导电玻璃基板表面沉积钨钒金属膜, 再经空气气氛下的热氧化处理, 制备了W掺杂VO₂/FTO复合薄膜, 利用X射线光电子能谱、X射线衍射和扫描电镜对薄膜的结构和表面形貌进行了分析. 结果表明: 高温热氧化处理过程中没有生成W, F, V混合氧化物, W以替换V原子的方式掺杂. 与采用相同工艺和条件制备的纯VO₂/FTO复合薄膜相比, W掺杂VO₂薄膜没有改变晶面取向, 仍具有(110)晶面择优取向, 相变温度下降到35 ℃左右, 热滞回线收窄到4 ℃, 高低温下的近红外光透过率变化量提高到28%. 薄膜的结晶程度明显提高, 表面变得平滑致密, 具有很好的一致性, 对光电薄膜器件的设计开发和工业化生产具有重要意义. 关键词： W掺杂 2')" href="#">VO₂ FTO导电玻璃 磁控溅射     

Nonisothermal Crystallization Behavior of Polypropylene Grafted Silane and Styrene Using γ-Ray Irradiation

Polypropylene grafted silane and styrene (named PP-g-Si/St in this article) was successfully prepared by radical graft polymerization initiated by γ-ray irradiation. The influence of total absorbed dose on the graft ratio of vinyltrimethoxysilane onto PP and the melt flow rate (MFR) of the PP-g-Si/St product were studied. The effect of graft ratios of vinyltrimethoxysilane on the melting point and nonisothermal crystallization kinetics of PP-g-Si/St was investigated by the method of differential scanning calorimetry (DSC). With increasing vinyltrimethoxysilane and styrene (used as viscosity modifier and free radical source) grafted on PP, the melting point of PP-g-Si/St became lower. Several different analysis methods, including those of Avrami, Jeziorny, and Mo and colleagues, were employed to describe the nonisothermal crystallization process of the grafted samples. The results indicate that the peak temperature of crystallization of PP-g-Si/St sample was lower than that of virgin PP. Crystallization kinetics revealed that the rates of nucleation and growth were affected differently by the graft ratio of vinyltrimethoxysilane onto PP. The activation energy was calculated on the basis of the method of Kissinger, and the values were 253.6 and 215.7 kJ/mol for virgin PP and PP-g-Si/St, respectively.     

Terfenol-D/PZT磁电复合材料的磁电相位移动研究

采用粘合法制备了叠层结构的块体Terfenol-D/PZT磁电复合材料,测量了不同频率下的磁电回线,采用新的极坐标下的方式做图.从极坐标下的磁电回线中可以看出,随直流磁场的变化,非谐振频率下的磁电相位发生了轻微移动,移动幅度随频率的增加而增加;而在谐振频率下,伴随着巨磁电效应,磁电相位发生了显著移动,移动幅度达到了近90°.与粉末Terfenol-D/环氧树脂/PZT磁电复合材料对比之后表明,非谐振频率下块体Terfenol-D/PZT的磁电相位移动主要由涡流引起;而谐振频率下大幅度相位移动则主要来源于Terfenol-D的磁致弹性变化.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

一种基于BOTDA与FBG传感的共线温度测试技术

根据大型结构全尺度分布式高精度温度测量要求,组合应用布里渊时域分析(BOTDA)技术和光纤布拉格光栅(FBG)温度传感技术,设计了一种由BOTDA分析仪、FBG解调仪、共线传感探头和光开关组成的温度传感测试系统。实验测试证明,该系统具备大范围分布式温度测量与局部高精度温度测量功能,而且实现了BOTDA测温技术与FBG温度传感技术的有效互补,解决了测量范围和测量精度的矛盾问题,并且具有良好的温度重复性,达到了预期的设计要求。该共线测试技术方案在大规模结构温度监测中具有广阔的应用前景。