烟气中Hg的氧化机理的研究

本文对Ｈｇ与Ｃｌ２在烟气中的氧化反应进行了热力平衡计算和动力学计算。平衡计算的结果表明有ＣＩ元索存在时Ｈｇ的氧化率为１００％，而在相同的条件下动力学计算纺果为Ｈｇ的氧化率在２０％～８０％之间变化，与实验结果吻合。实际的氧化反应是一种超平衡状态，不能达到理想的平衡状态。因此应采用动力学与热力平衡分析相结合的方法研究Ｈｇ在烟气中的反应机理。同时，计算结果显示Ｃｌ含量对Ｈｇ的氧化率的影响很大．     

Stationary turbulent closure via the Hopf functional equation

Exact closed-form solutions are exhibited for the Hopf equation for stationary incompressible 3D Navier-Stokes flow, for the cases of homogeneous forced flow (including a solution with depleted nonlinearity) and inhomogeneous flow with arbitrary boundary conditions. This provides an exact method for computing two- and higher-point moments, given the mean flow.     

Formation of hydrogenated amorphous carbon films from polymer pyrolysis

Free-standing and supported hydrogenated amorphous carbon films (a:C–H) were prepared upon pyrolysis of the polymer formed by ethanolamine (EA) and citric acid (CA), under an ambient atmosphere at 300 °C. EA facilitates the formation of the macroscopic films, while CA is essential for obtaining the a:C–H microstructure, which comprises a mixture of sp² and sp³ carbon. Received: 29 May 2001 / Accepted: 17 August 2001 / Published online: 20 December 2001     

加肋圆柱壳在轴压作用下的屈曲和后屈曲

本文讨论完善和非完善的,纵向加肋和正交加肋圆柱壳在轴压作用下的屈曲和后屈曲性态.依据文[1]提供的圆柱薄壳屈曲的边界层理论及其分析方法,给出了加肋圆柱壳在轴压作用下的屈曲和后屈曲理论分析.本文同时讨论肋骨与壳板材料不同时对加肋圆柱壳屈曲和后屈曲性态的影响.     

Micro-Photoluminescence Investigation of Single Quantum Dot and its Molecule of CdSe/ZnSe

The single and a few coupled quantum dots are important for future quantum information sciences and their investigation is also a big challenge in physics. We investigate here the electronic and exciton states and their interaction with each other via micro photoluminescence. The luminescence for single and a few dots as well as a dot molecule of CdSe/ZnSe are measured with very high resolution, under liquid He temperature and magnetic fields and with different polarization of excitation laser. The observed sharp spectral lines are attributed to the atomlike transitions of exciton, trion, biexciton… in the investigated single QD or QD molecule. Band filling, Zeeman splitting, spin transition and their relaxation are observed and investigated＇from the spectra and compared with those of same material in different dimensions, and compared with the primary calculation as well. In addition, quite a few new phenomena, which can not be understood based on our present model and knowledge, are also observed; and some very interesting problems are left for further investigation.     

带干扰的多险种风险模型

由于保险公司风险经营规模不断扩大,用单一险种的模型来描述风险过程存在局限性,本文讨论了带干扰多险种风险模型,应用鞅论方法,得出伦德伯格不等式和最终破产概率公式。     

V3+:YAG晶体的生长、色心与光谱性能研究

采用石墨电阻加热的温梯法生长了V:YAG晶体,晶体的不同部位呈现两种不同的颜色:浅绿色和黄褐色.通过对比分析不同颜色V:YAG晶体的室温吸收光谱,推断出石墨发热体高温下扩散出来的C可以起到还原作用,提高晶体中V3+tetra离子的浓度,同时诱导了F心的形成.在1300℃下,对不同颜色的V:YAG晶体进行真空退火处理,发现处于八面体格位中的V3+离子在热激发作用下与近邻的四面体格位Al3+离子存在置换反应,由此产生一定浓度的四面体格位V3+离子.同时,F心在退火过程中被完全消除,释放出来的自由电子被高价态的V离子俘获,可以进一步提高晶体中四面体格位V3+离子的浓度.     

聚丙烯孔洞铁电驻极体膜的电极化及其电荷动态特性

根据栅控恒压电晕充电组合反极性电晕补偿充电法的实验结果计算出铁电驻极体的极化强度.结果说明，伴随着薄膜内孔洞气体的Paschen击穿，该铁电体的极化强度随栅压增加而显著上升.利用上述充电方法和热刺激放电(TSD)谱的分析讨论了这类空间电荷型宏观电偶极子，及与其补偿的空间电荷热退极化的电荷动态特性；阐明了这两类俘获电荷的能阱分布，即构成宏观电偶极子的位于孔洞上下介质层内的等值异号空间电荷分别被俘获在深、浅两种能值陷阱内，而位于薄膜表面层的注入空间电荷则被俘获在中等能值陷阱中. 关键词： 反极性电晕补偿充电法 铁电驻极体 充电电流 热刺激放电     

用自适应脉冲微扰引导混沌系统到周期解

用自适应脉冲微扰方法控制的系统的某个系统变量作为驱动,设计了一种自适应控制器方法对两个或多个响应混沌系统进行脉冲微扰,引导这些系统从混沌运动到低周期运动,实现同时控制多个混沌系统到不同的周期态. 当选择相同的自适应控制器输入变量实施脉冲微扰时,还可控制两个或多个混沌系统达到不同的周期态同步. 通过对R?ssler混沌系统的仿真研究证实了方法的有效性. 关键词： 混沌控制 系统参量 自适应控制器 脉冲微扰 周期态同步     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.