荧光光度法直接测定高纯氧化钕中的痕量镨和铈

使用Ｐ－ＥＬＳ５０荧光光谱仪，在盐酸介质中，用同一激发波长激发，分别测定Ｐｒ（Ⅲ）（ｎｍ）和Ｃｅ（Ⅲ）（３５６ｎｍ）发射峰强度。     

On Decomposition Theorems for Hardy Spaces on Domains in ℂn and Applications

Hardy spaces of analytic functions are studied both on strongly pseudoconvex domains in ℂⁿ and on domains of finite type in ℂ². Duality theorems, atomic decompositions, and factorization of functions are treated. Mapping properties of certain Hankel operators are studied.     

Molecular deposition film of porphyrin and phthalocyanine bearing oppositely charged substituents

Ｔｈｅｆｏｒｍａｔｉｏｎｏｆａｎｅｗｔｙｐｅｏｆｓｅｌｆ＿ａｓｓｅｍｂｌｅｄｍｕｌｔｉｌａｙｅｒｆｉｌｍｓ,ｍｏｌｅｃｕｌａｒｄｅｐｏｓｉｔｉｏｎ(ＭＤ)ｆｉｌｍｓ[1,2],ｉｓａｆａｓｔｄｅｖｅｌｏｐｉｎｇａｒｅａｏｆｔｈｉｎｆｉｌｍｒｅｓｅａｒｃｈ.Ｔｈｉｓｎｅｗｍｅｔｈｏｄｏｆｆｉｌｍｐｒｅｐａｒａｔｉｏｎｉｓｂａｓｅｄｏｎｉｏｎｉｃａｔｔｒａｃｔｉｏｎｂｅｔｗｅｅｎｏｐｐｏｓｉｔｅｃｈａｒｇｅｄｃｈｒｏｍｏｐｈｏｒｅｓ.ＩｎｃｏｍｐａｒｉｓｏｎｗｉｔｈｔｈｅｃｌａｓｓｉｃＬａｎｇｍｕｉｒ＿Ｂｌｏ…     

An Estimate of Inequality of Signature and Nullity for Links

ＡｎＥｓｔｉｍａｔｅｏｆＩｎｅｑｕａｌｉｔｙｏｆＳｉｇｎａｔｕｒｅａｎｄＮｕｌｌｉｔｙｆｏｒＬｉｎｋｓ￥ＬｉＱｉｓｈｅｎｇ（李起升）（Ｄｅｐｔ．ＯｆＭａｔｈ．ＨｅｎａｎＵｎｉｖｅｒｓｉｔｙ，Ｋａｉｆｅｎｇ４７５００１）Ａｂｓｔｒａｃｔ：Ａｎｉｎｅｑｕ...     

A Novel Method to Synthesize Polyorganozircosilazane

A new kind of polyorganozircosilazane as Si/Zr/C/N-based ceramic precursor was synthesized from the condensation reaction of hexamethyleyclotrisilazane lithium salts(D3^NLi）and zirconium tetrachloride(ZrCl4).In the presence of N,N,N’,N’-tetramethyl ethylene diamine(TMEDA),polyorganozircosilazane was obtained in high yield.     

Diffractive dissociation reaction np → Λ0K0p for incident neutron momenta between 30 and 70 GeV/c BIS-2 collaboration

We present results of the exclusive diffractive reaction np ⁰K⁰p at 0·08 < |t|< 0·53 GeV²/c² and momenta between 30–70 GeV/c at the Serpukhov neutron beam. Thet-dependence is exp (Bt) withB= 11·4± 2·3 (GeV/c)^–2 and it exhibits the diffractive minimum at ¦t¦ 0·28 GeV²/c² for ⁰K⁰ massesM < 1·8 GeV/c².B decreases with increasingM. Correlation with the beam direction is observed in the rest frame of the ⁰K⁰ system: the cross section rises for the forward-going ⁰. The rise is more pronounced for higherM. The cross section of reaction np ⁰K⁰p for 0<|t|< 0·53 GeV²/c² is 10·3 ± 2·5 ± 2·8 b.