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101.
102.
DNS of the Turbulent Channel Flow of a Dilute Polymer Solution 总被引:1,自引:0,他引:1
A direct numerical simulation of the turbulent channel flow of a dilute polymer solution has been performed in order to compare its turbulence statistics with those obtained in a Newtonian channel flow. The viscoelastic flow has been simulated by solving the whole set of continuity, momentum and constitutive equations for the six independent components of the extra-stress tensor induced by polymer addition. The Finitely Extensible Nonlinear Elastic dumbbell model was adopted in order to simulate a non-linear modulus of elasticity and a finite extendibility of the polymer macromolecules. Simulations were carried out under the narrow channel assumption at a Reynolds number of 169 based on the channel half height and on the friction velocity; they showed a significant reduction in drag, dependent on the influence of the elastic properties of the chains. A qualitative comparison with experiments at a higher Reynolds number has shown that the model here adopted is capable of reproducing all the main features of the polymer solution flow. Analysis of the turbulence statistics suggests that a dilute polymer solution can affect the intensity of the streamwise vortices, leading to an increase in the spacing between low speed streaks and eventually to a turbulent shear stress reduction. 相似文献
103.
V. Gorbenko M. Veillerot A. Grenier G. Audoit W. Hourani E. Martinez R. Cipro M. Martin S. David X. Bao F. Bassani T. Baron J.‐P. Barnes 《固体物理学:研究快报》2015,9(3):202-205
The chemical characterization of novel 3D architectures with nanometre‐scale dimensions is extremely challenging. The chemical composition of InGaAs/AlAs quantum wells selectively grown in SiO2 trenches, 100–300 nm wide, is studied. Combining high lateral resolution 3D ToF‐SIMS analysis and Auger measurements, the chemical composition of individual trenches was obtained confirming the uniformity of these III–V heterostructures. These results correlate well with an average approach using SIMS depth profiling. The effects of ion beam orientation on the surface topography of confined structures were highlighted. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) 相似文献
104.
G. Landwehr F. Fischer T. Baron T. Litz A. Waag K. Schüll H. Lugauer T. Gerhard M. Keim U. Lunz 《physica status solidi b》1997,202(2):645-655
Beryllium chalcogenides are semiconductors with a large bandgap. They have a higher degree of covalent bonding than all of the other II–VI compounds. The bond energies of BeSe and BeS are comparable to those of GaN. Due to their bandgaps and their lattice constants they can be incorporated in quaternary mixed crystals which are lattice matched to GaAs. The hardness of II–VI materials containing beryllium offers new possibilities to enlarge the lifetime of laser diodes, emitting in the green and blue spectral range. First double heterostructure laser diodes with beryllium as a constituent have been produced on p-type GaAs substrates by molecular beam epitaxy. Double barrier tunneling structures of the composition ZnSe–BeTe were realized and investigated in high magnetic fields. Shubnikov-de Haas oscillations were observed in the ZnSe contacts of the devices. 相似文献
105.
F. Bertin Th. Baron D. Mariolle F. Martin A. Chabli M. Dupuy 《physica status solidi (a)》1999,175(1):405-412
The ability of spectroscopic ellipsometry to characterize silicon nanostructures is assessed. Ellipsometric analysis is performed on samples obtained for various deposition times by Low Pressure Chemical Vapor Deposition (LPCVD) onto a thin oxide layer. The aggregate signature is evidenced in the 0.3 to 0.9 μm spectral range. It is correlated to Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and Transmission Electron Microscopy (TEM) observations. As a result, the aggregate mean radius is deduced from their ellipsometric signature allowing a contactless non-destructive analysis. 相似文献
106.
C. Baron A. Deneuville M. Wade F. Jomard J. Chevallier 《physica status solidi (a)》2006,203(3):544-550
Heavily boron doped 1.8 to 2.4 µm thick homoepitaxial diamond films with 1.5 × 1021 cm–3 ≤ [B] ≤ 1.75 × 1021 cm–3 have been deposited directly on their (100) Ib substrates at 830 °C. Their cathodoluminescence spectra probe the controlled thicknesses from 0.28 to 2.8 µm, therefore the bulk of the films as well as their interfaces with their substrates. The bulk of these films exhibit a band with shoulders ascribed to BETO (5.036 eV), FETO (5.094 eV) and BENP (5.184 eV) excitons whose energies are downward shifted by about 180 meV in comparison with monocrystalline diamond with low [B] < 5 × 1018 cm–3. This large shift allows the appearance of narrow peaks around 5.216, 5.271 and 5.357 eV ascribed to BETO, FETO and BENP from interfacial layers with low [B]. From their BETO to FETO ratio, their concentration of boron on isolated substitutional sites is significantly lower than their total low [B] content measured by SIMS. A tentative model is proposed to explain the characteristics of these 40 to 160 quasihomogeneous interfacial layers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
107.
A. Tajani C. Tavares M. Wade C. Baron E. Gheeraert E. Bustarret S. Koizumi D. Araujo 《physica status solidi (a)》2004,201(11):2462-2466
Boron‐ and phosphorus‐doped diamond layers were grown successively by microwave plasma‐assisted chemical vapour deposition on {111}‐oriented boron‐doped Ib substrates. The resulting diodes were studied electrically with and without metallization. Although cathodoluminescence results showed that the material quality of the p‐type {111} layer could still be improved, Electron Beam Induced Current imaging (EBIC) provided evidence for a space charge region. At room temperature, I(V) characteristics yielded a rectification ratio at +/– 25V varying between 104 and 109. In some cases, this figure remained greater than 106 up to 200 °C, despite a marked increase of the reverse current with temperature. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
108.
J. Chevallier Z. Teukam C. Saguy R. Kalish C. Cytermann F. Jomard M. Barb T. Kociniewski J. E. Butler C. Baron A. Deneuville 《physica status solidi (a)》2004,201(11):2444-2450
We show that deuteration of a series of boron‐doped (100) diamond epitaxial layers can lead to a p‐type to n‐type conversion. The n‐type diamond epilayers have electrical conductivities of a few S/cm at 300 K. These values are a factor 103–105 higher than the n‐type conductivities achieved with phosphorus doping. This is a consequence of the shallow donor character of the deuterium‐related donors inducing the conversion (ionization energy of 0.34 eV) and of the high donor concentrations. We also show that these donors are formed in a two‐step process. First, all the acceptors form (B, D) complexes with one deuterium per boron atom. Then, the presence of excess and more mobile deuterium triggers the formation of the shallow donors. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
109.
110.
Finsy V Verelst H Alaerts L De Vos D Jacobs PA Baron GV Denayer JF 《Journal of the American Chemical Society》2008,130(22):7110-7118
Vapor-phase adsorption and separation of the C8 alkylaromatic components p-xylene, m-xylene, o-xylene, and ethylbenzene on the metal-organic framework MIL-47 have been studied. Low coverage Henry adsorption constants and adsorption enthalpies were determined using the pulse chromatographic technique at temperatures between 230 and 290 degrees C. The four C8 alkylaromatic components have comparable Henry constants and adsorption enthalpies. Adsorption isotherms of the pure components were determined using the gravimetric technique at 70, 110, and 150 degrees C. The adsorption capacity and steepness of the isotherms differs among the components and are strongly temperature dependent. Breakthrough experiments with several binary mixtures were performed at 70-150 degrees C and varying total hydrocarbon pressure from 0.0004 to 0.05 bar. Separation of the different isomers could be achieved. In general, it was found that the adsorption selectivity increases with increasing partial pressure or degree of pore filling. The separation at a high degree of pore filling in the vapor phase is a result of differences in packing modes of the C8 alkylaromatic components in the pores of MIL-47. 相似文献