Raman spectroscopic studies of planar gettering effects

Raman scattering spectroscopy is used to study the elastic stress distribution in the epitaxial silicon operating areas in the vicinity of planar getter areas, the latter being created by previous ion implantation of the substrate. Data concerning the effect of the operating element size and the dose of implantation into the getter area are obtained. The results are compared with those of X-ray topographic analysis of the structures.     

Metal deposition onto thiol-covered gold: Platinum on a 4-mercaptopyridine SAM

In this study we describe details of a new technique that allows to deposit metal on top of a self-assembled monolayer (SAM). Monoatomic high platinum islands were formed on a 4-mercaptopyridine SAM on Au(1 1 1) by first immersing the SAM-covered gold electrode in an aqueous solution of K₂PtCl₄ without potential control to allow Pt(II) ions to form a complex with the pyridine nitrogen. The complexed Pt(II) ions were then reduced electrochemically to Pt(0) after transferring the electrode to a Pt(II) ion-free solution. Upon reduction, monoatomic high Pt islands were observed in STM, the total coverage depending on the time for complexation. Ex situ angle-resolved XPS studies reveal that the Pt islands indeed reside on top of the SAM.     

Approximation of classes of periodic functions of several variables

We study classes of periodic functions of several variables with bounded generalized derivative in the metric of the space L_p. We obtain order estimates of deviations of Fourier sums, which are constructed depending on the behavior of functions that define the operator of generalized differentiation. We find estimates of the Kolmogorov widths, which are realized by the Fourier sums that are constructed.Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 44, No. 5, pp. 662–672, May, 1992.     

Oleksandr Ivanovych Stepanets' (On His 60th Birthday)

Ukrainian Mathematical Journal -     

Formation of pits during growth of Si/Ge nanostructures

Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D Ge layer move to Si step edges where stronger bonds with Si atoms are formed. Appropriate growth conditions can suppress or enhance the pit formation effect and consequently a new type of self-organized nanostructures can be formed.     

Best trigonometric and bilinear approximations of classes of functions of several variables

Order-sharp estimates of the best orthogonal trigonometric approximations of the Nikol’skii-Besov classes B _p,θ ^r of periodic functions of several variables in the space L _q are obtained. Also the orders of the best approximations of functions of 2d variables of the form g(x, y) = f(x?y), x, y ∈ $\mathbb{T}$ ^d = Π _j=1 ^d [?π, π], f(x) ∈ B _p,θ ^r , by linear combinations of products of functions of d variables are established.     

Temporal dynamics of upconversion luminescence in Er3+, Yb3+ co-doped crystalline KY(WO4)2 thin films

Crystalline Er³⁺ and Yb³⁺ singly and doubly doped KY(WO₄)₂ thin films were grown by low-temperature liquid-phase epitaxy. Absorption, luminescence, excitation and temporal evolution measurements were carried out for both Er³⁺ and Yb³⁺ transitions from 10 K to room temperature. Green Er³⁺ upconversion luminescence was observed after Yb³⁺ and Er³⁺ excitation. The mechanisms responsible for the upconversion phenomena detected in each case were identified.     

Study of phonon polaritons in GaAs/GaPAs superlattices using methods of IR reflection spectroscopy

We studied phonon-polariton modes in long-period GaAs/GaPAs semiconductor superlattices using the methods of frustrated total internal reflection and IR spectroscopy in the region of residual rays. The excitation of waveguide, real, and virtual surface and volume phonon polariton modes was observed experimentally. Their dispersion relations were calculated and compared with experimental data, and the excitation nature was identified with the aid of the spectra of permittivity and a normal component of the wave vector in heterostructure layers. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 4, pp. 460–466, July–August, 1999.     

Simulation of elasto optical properties of K2SO4 crystals

The electronic optical spectra of the mechanically free and stressed crystals of potassium sulfate, K₂SO₄, in the orthorhombic phase Pnma have been calculated by the Cambridge Serial Total Energy Package (CASTEP) code. On the basis of these calculations, the components of stress elasto optical tensors based on the changes of refractive index n (π_im) and birefringence Δn () (i, k, m=1, 2, …, 6) have been obtained for the indices i, k ,m=1, 2, 3. Absolute magnitudes of the calculated tensor π_im are probably underestimated because the magnitudes of the calculated elastic stiffness tensor c_rm are found to be overestimated about two times. Features of the spectral dependences n(E) and k(E) of refractive and absorption indices of the mechanically free and stressed potassium sulfate crystals have been analyzed.     

Electron attenuation anisotropy at crystal surfaces from LEED

Dynamical theory of electron scattering is used to describe the electron transport in the surface regions of crystals. The angle resolved attenuation length of electrons is derived from the transmitted LEED electron current decay. Electron attenuation length energy dependence and anisotropy in polar angle are found for crystalline Cu(1 1 1) for two high symmetry azimuths. Pronounced anisotropy in polar angle distributions of attenuation lengths is found to be in qualitative agreement with the results obtained from the photoelectron diffraction. Comparison with the attenuation lengths obtained from semiclassical simulations for amorphous copper is given. This comparison demonstrates that simple transfers of the smoothly behaving surface sensitivity from amorphous materials oversimplifies the electron attenuation process and can lead to incorrect results in quantitative analyses of crystalline surfaces.