Identification of nonstationary axisymmetric load distributed along a cylindrical shell

The paper outlines a procedure to identify the space-and time-dependent external nonstationary load acting on a closed circular cylindrical shell of medium thickness. Time-dependent deflections at several points of the shell are used as input data to solve the inverse problem. Examples of numerical identification of various nonstationary loads, including moving ones are presented. The relationship between the external load and the stress-strain state of the shell is described by the Volterra equation of the first kind. The identification problem is solved using Tikhonov's regularization method and Apartsin's h-regularization method __________ Translated from Prikladnaya Mekhanika, Vol. 44, No. 7, pp. 91–100, July 2008.     

Reaction of sodium amide with 1-chloromethylsilatrane

The reaction of 1-chloromethylsilatrane with sodium amide in benzene is accompanied by ring expansion with formation of 1-amino-2-carba-3-oxahomosilatrane.     

Properties of backscattered particles produced by protons of energy above 1 TeV in an iron absorber

Backscattered-particle production is studied by means of a detailed simulation of cascade processes in a dense medium. The energy dependence of the albedo and the spatial and angular distributions of various components of this flux are analyzed.     

Spatial macroscopic structure of a pulsed microsecond discharge in barrier-metal gaps with a nonuniform electric field distribution

Electric and spatial characteristics of a pulse-periodic microsecond barrier discharge are investigated in different geometries—triangular prism, plate, and corrugated electrode—that are in contact with a dielectric plate and form a dihedral angle with it. It is established that, in the space of the dihedral angle, the regions of discharge represent alternating cylindrical layers with the axes lying on the contact line. The first conducting layer is formed at some distance from the contact edge of the electrode. The number of layers and their localization are determined by the angle formed between an electrode and the dielectric plate. A physical model explaining the main features of the structure formation is proposed.     

Electron Metal-Dielectric Phase Transitions in Semiconductors under Pressure

The effect of uniform pressure on the character of metal-dielectric transitions in compensated weakly- and highly doped semiconductors (WHDCS) is considered. The influence of hybridization of resonance quasilocalized impurity states with band continuum states on the transition is shown. Minimum metallic conductivities in p-CdSnAs₂ are determined for Mott and Anderson transitions. Special features of the metal-dielectric transformation in weakly-doped narrow- and high energy-gap semiconductors are discussed for the case of hydrogen-like impurities. Anderson localization in WHDCS is also considered. Phase diagrams are presented.