Mössbauer Study of Ceramic Finds from the Galería de las Ofrendas, Chavín de Huántar

Ceramic finds from the Galería de las Ofrendas at Chavín de Huántar and surface finds from the settlement of Chavín were characterised by combining the results of archaeological typology with archaeometric studies using neutron activation analysis, Mössbauer spectroscopy, X-ray diffraction and thin-section microscopy. Sherds from the pyramid Tello are included in the study as representative of local material. The analyses show that the vessels were made from different raw materials and that different firing procedures were used in their production. Sherds of certain styles largely exhibit similar types of Mössbauer patterns and in many instances also have similar element compositions. This supports the archaeological notion that the vessels were brought to Chavín from the provinces, perhaps on the occasion of a festivity.     

Kinetics of oxygen exchange in strontium titanate

The kinetics of oxygen exchange are of primary importance for the application of titanates as fast resistive oxygen sensors. The sensor’s conductivity is correlated with the oxygen partial pressure pO₂ of the surrounding atmosphere: Due to oxygen surface transfer and subsequent diffusion of oxygen vacancies V _O ^·· , a pO₂ change gives rise to a conductivity change of the sample. While bulk diffusion usually occurs very fast, the surface transfer reaction becomes the rate determining step for thin samples and for low temperatures. We have shown that in the case of acceptor doped SrTiO₃ the kinetics of the surface transfer reaction can be strongly influenced through stoichiometric changes brought about by thin coatings of alkaline earth metal oxides (e.g. SrO). In contrast to the commonly used jump method (conductivity response to a sudden pO₂ change in the time domain), a model is presented which is based on the frequency-domain analysis of amplitude and phase shift of the response signal obtained from a pO₂ modulation in a fast kinetic measurement set-up. This method allows not only for measuring response times in the sub-millisecond range but also for distinguishing between behaviour either controlled by volume diffusion or by surface transfer reaction. Paper presented at the 9th EuroConference on Ionics, Ixia, Rhodes, Greece, Sept. 15 – 21, 2002.     

Luminescence enhancement by hydrogenation of Si:Er,O

Erbium (Er)- and oxygen (O)-doped Cz–Si was additionally doped with hydrogen, using plasma enhanced chemical vapour deposition. Photoluminescence (PL) spectra show a large enhancement especially for samples treated with solid phase epitaxy before hydrogenation and annealing at 900°C later. Secondary ion mass spectroscopy measurements give evidence for an enhanced diffusion of O and Er at this temperature towards the surface. Etching shows that the PL does not stem from the heavily doped surface layer but from a deeper region with lower Er concentration. This conclusion is supported by the appearance of the so-called “cubic” centre with low solubility. Comparing the PL yield of the hydrogenated samples to that of samples with similar Er volume concentration but without hydrogenation still gives a large enhancement. We thus conclude that hydrogen can enhance the solubility of the cubic centre in Si:Er,O.     

Surface free energies of electroless Ni–P based composite coatings

Surface free energy of a solid surface gives a direct measure of intermolecular interactions at interfaces and has a strong influence on adsorption and adhesion behaviour. However few data are available for the surface free energies of electroless Ni–P based composition coatings. In this paper, the electroless Ni–P, Ni–P-surfactant, Ni–Cu–P, Ni–P–PTFE and Ni–Cu–P–PTFE composite coatings were prepared under various coating conditions. The chemical compositions, surface morphology and thickness of the coatings were measured using an energy dispersive X-ray microanalysis (EDX), a scanning electron microscope (SEM) and a digital micrometer respectively. The contact angles of water, diiodomethane and ethylene glycol on the coatings were measured automatically using dataphysics OCA-20 contact angle analyser. The surface free energy of the coatings and their components (e.g. dispersion, polar or acid/base portions) were calculated using various methods. The experimental results showed that the incorporation of surfactant or PTFE particles into Ni–P matrixes has a significant influence on the surface free energy of the coatings, while the incorporation of copper into Ni–P matrixes has no significant influence on the surface free energy of the coatings.     

Low noise double pass L-band erbium-doped fiber amplifier

A new double pass long wavelength band erbium-doped fiber amplifier with enhanced noise figure characteristics is demonstrated. The noise figure is improved by about 2.6 dB with the incorporation of broadband conventional-band fiber Bragg grating (FBG) in between the two segments of erbium-doped fiber. By incorporating both the pre-amplifier and the FBG, the noise figure is further improved, which varies from 4.0 to 5.0 dB in the flat gain region from 1570 to 1600 nm. The gain varies from 32.0 to 33.4 dB within this region. The new amplifier with high gain and low noise figure can be useful as an inline amplifier in a wavelength division multiplexing transmission system.     

Hydrogen indium vacancy complex VInH4 in n-type InP studied by positron-lifetime

Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (V_InH₄)⁺ to (V_InH₄)⁰. This phenomenon was more obvious in P-rich samples that have a higher concentration of V_InH₄. The transformation temperature of approximately 120 K suggests that the complex V_InH₄ is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral V_InH₄ accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP.     

Generation of angular momentum of fission fragments in a cluster model

Based on the dinuclear system concept, the role of bending vibrations in creation of the angular momentum of primary fission fragments is investigated. For ²⁵²Cf spontaneous fission, the angular momenta of the fragments are calculated as a function of the neutron multiplicity and compared with available experimental data. Different cluster compositions of the ²⁵²Cf fission modes at the scission point are considered.     

Charge manipulation and imaging of the Mn acceptor state in GaAs by cross-sectional scanning tunneling microscopy

An individual Mn acceptor in GaAs is mapped by cross-sectional scanning tunneling microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn²⁺3d⁵+hole) complex. We propose that the observed anisotropy of the Mn acceptor wavefunction is due to the d-wave present in the acceptor ground state.     

The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots

We report on low-temperature microphotoluminescence (μ-PL) measurements of InAs/GaAs quantum dots (QDs) exposed to a lateral external electric field. It is demonstrated that the QDs’ PL signal could be increased severalfold by altering the external and/or the internal electric field, which could be changed by an additional infrared laser. A model which accounts for a substantially faster lateral transport of the photoexcited carriers achieved in an external electric field is employed to explain the observed effects. The results obtained suggest that the lateral electric fields play a major role for the dot luminescence intensity measured in our experiment—a finding which could be used to tailor the properties of QD-based optoelectronic applications. The text was submitted by the authors in English.