Scanning transmission X‐ray microscopy probe for in situ mechanism study of graphene‐oxide‐based resistive random access memory

Here, an in situ probe for scanning transmission X‐ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K‐ and O K‐edges, both the RRAM junctions and the I₀ junction were fabricated on a single Si₃N₄ membrane to obtain local XANES spectra at these absorption edges with more delicate I₀ normalization. Using this probe combined with the synchrotron‐based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K‐edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.     

Bandgap engineering of self-assembled InAs quantum dots with a thin AlAs barrier

We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.     

The emission wavelength tuning of InAs/InP quantum dots with thin GaAs, InGaAs, InP capping layers by MOCVD

InAs quantum dots (QDs) were grown on InP substrates by metalorganic chemical vapor deposition. The width and height of the dots were 50 and 5.8 nm, respectively on the average and an areal density of 3.0×10¹⁰ cm⁻² was observed by atomic force microscopy before the capping process. The influences of GaAs, In_0.53Ga_0.47As, and InP capping layers (5–10 ML thickness) on the InAs/InP QDs were studied. Insertion of a thin GaAs capping layer on the QDs led to a blue shift of up to 146 meV of the photoluminescence (PL) peak and an InGaAs capping layer on the QDs led to a red shift of 64 meV relative to the case when a conventional InP capping layer was used. We were able to tune the emission wavelength of the InAs QDs from 1.43 to 1.89 μm by using the GaAs and InGaAs capping layers. In addition, the full-width at half-maximum of the PL peak decreased from 79 to 26 meV by inserting a 7.5 ML GaAs layer. It is believed that this technique is useful in tailoring the optical properties of the InAs QDs at mid-infrared regime.     

Observation of the decay B+/--->pi+/-pi0, study of B+/--->K+/-pi0, and search for B0-->pi0pi0

We present results for the branching fractions and charge asymmetries in B+/--->h(+/-)pi(0) (where h(+/-)=pi(+/-),K+/-) and a search for the decay B0-->pi(0)pi(0) using a sample of approximately 88 x 10(6) BBmacr; pairs collected by the BABAR detector at the PEP-II asymmetric-energy B Factory at SLAC. We measure B(B+/--->pi(+/-)pi(0))=(5.5(+1.0)(-0.9)+/-0.6)x10(-6), where the first error is statistical and the second is systematic. The B+/--->pi(+/-)pi(0) signal has a significance of 7.7sigma including systematic uncertainties. We simultaneously measure the K+/-pi(0) branching fraction to be B(B+/--->K+/-pi(0))=(12.8(+1.2)(-1.1)+/-1.0)x10(-6). The charge asymmetries are Api(+/-)(pi(0))=-0.03(+0.18)(-0.17)+/-0.02 and AK+/-(pi(0))=-0.09+/-0.09+/-0.01. We place a 90% confidence-level upper limit on the branching fraction B(B0-->pi(0)pi(0)) of 3.6 x 10(-6).     

Stationary binary subdivision schemes using radial basis function interpolation

A new family of interpolatory stationary subdivision schemes is introduced by using radial basis function interpolation. This work extends earlier studies on interpolatory stationary subdivision schemes in two aspects. First, it provides a wider class of interpolatory schemes; each 2L-point interpolatory scheme has the freedom of choosing a degree (say, m) of polynomial reproducing. Depending on the combination (2L,m), the proposed scheme suggests different subdivision rules. Second, the scheme turns out to be a 2L-point interpolatory scheme with a tension parameter. The conditions for convergence and smoothness are also studied. Dedicated to Prof. Charles A. Micchelli on the occasion of his 60th birthday Mathematics subject classifications (2000) 41A05, 41A25, 41A30, 65D10, 65D17. Byung-Gook Lee: This work was done as a part of Information & Communication fundamental Technology Research Program supported by Ministry of the Information & Communication in Republic of Korea. Jungho Yoon: Corresponding author. Supported by the Korea Science and Engineering Foundation grant (KOSEF R06-2002-012-01001).     

Generalized MacWilliams identities and their applications to perfect binary codes

We present generalized MacWilliams identities for binary codes. These identities naturally lead to the concepts of the local weight distribution of a binary code with respect to a word u and its MacWilliams u-transform. In the case that u is the all-one word, these ones correspond to the weight distribution of a binary code and its MacWilliams transform, respectively. We identify a word v with its support, and consider v as a subset of {1, 2,..., n}. For two words u,w of length n such that their intersection is the empty set, define the u-face centered at w to be the set . A connection between our MacWilliams u-transform and the weight distribution of a binary code in the u-face centered at the zero word is presented. As their applications, we also investigate the properties of a perfect binary code. For a perfect binary code C, the main results are as follows: first, it is proved that our local weight distribution of C is uniquely determined by the number of codewords of C in the orthogonal u-face centered at the zero word. Next, we give a direct proof for the known result, concerning the weight distribution of a coset of C in the u-face centered at the zero word, by A. Y. Vasil’eva without using induction. Finally, it is proved that the weight distribution of C in the orthogonal u-face centered at w is uniquely determined by the codewords of C in the u-face centered at the zero word.      

An answer to a question of A. Lubin: The lifting problem for commuting subnormals

In this paper, we give an answer to a long-standing open question on the lifting problem for commuting subnormals (due to A. Lubin): The subnormality for the sum of commuting subnormal operators does not guarantee the existence of commuting normal extensions.     

Compatibility and fungal degradation of poly[(R)-3-hydroxybutyrate]/aliphatic copolyester blend

Poly[(R)-3-hydroxybutyrate] (PHB) was blended with an aliphatic copolyester, which was synthesized by the esterification of adipic acid, ethylene glycol, and lactic acid. The blend showed a single T_g, which varied systematically but convexly upwards with the composition. The growth rate of PHB spherulites, the crystallization temperature, and the equilibrium melting temperature of the blend were decreased as the amount of the copolyester was increased. Therefore, the blend system was determined to be compatible. However, the degree of crystallinity, and the enthalpies of crystallization and fusion of PHB in the blend remained almost constant, regardless of the compositional change, although the crystallization rate was decreased upon blending. No chemical change such as transesterification was observed as a result of the blending, yet there was a slight change in the crystalline morphology of PHB. The rate of fungal degradation was lowered with an increase in the copolyester content of the blend. © 1996 John Wiley & Sons, Inc.     

A Novel Route to the Fused Maleic Anhydride Moiety of CP Molecules

A seven‐step cascade reaction —in which selective mesylation, epoxide formation, epoxide lysis, cyclization, reiterative oxidation, and nitrogen–oxygen exchange occur sequentially—facilitates the construction of the maleic anhydride moiety of CP molecules 1 and 2 (>93% yield per step). Unstable intermediates of this reaction sequence were detected, providing evidence for the proposed mechanism and resulting in the discovery of a new chemical entity.