Low-energy ion-assisted control of interfacial structures in metallic multilayers

A molecular dynamics method has been used to simulate the argon ion-assisted deposition of Cu/Co/Cu multilayers and to explore ion beam assistance strategies that can be used during or after the growth of each layer to control interfacial structures. A low-argon ion energy of 5–10 eV was found to minimize a combination of interfacial roughness and interlayer mixing (alloying) during the ion-assisted deposition of multilayers. However, complete flattening with simultaneous ion assistance could not be achieved without some mixing between the layers when a constant ion energy approach was used. It was found that multilayers with lower interfacial roughness and intermixing could be grown either by modulating the ion energy during the growth of each metal layer or by utilizing ion assistance only after the completion of each layers deposition. In these latter approaches, relatively high-energy ions could be used since the interface is buried and less susceptible to intermixing. The interlayer mixing dependence upon the thickness of the over layer has been determined as a function of ion energy.     

Sigma function solution of the initial value problem for Somos 5 sequences

The Somos 5 sequences are a family of sequences defined by a fifth order bilinear recurrence relation with constant coefficients. For particular choices of coefficients and initial data, integer sequences arise. By making the connection with a second order nonlinear mapping with a first integral, we prove that the two subsequences of odd/even index terms each satisfy a Somos 4 (fourth order) recurrence. This leads directly to the explicit solution of the initial value problem for the Somos 5 sequences in terms of the Weierstrass sigma function for an associated elliptic curve.

     

Bis[3‐(trimethyl­silyl)prop­yl] ethyl­enebisphospho­nate,H2DTMSP[EBP]

The title compound (H₂DTMSP[EBP]), C₁₄H₃₆O₆P₂Si₂, was crystallized by the slow evaporation of a solution in a 20:1 mixture of pentane and acetone. The H₂DTMSP[EBP] mole­cule lies about an inversion center. In the solid state, the mol­ecule exists in an anti configuration, with the mol­ecular backbone C—C bond located on an inversion center. The compound exists in the solid state as hydrogen‐bonded infinite sheets in the ab plane, unlike the methyl­ene analogue, which exists as hydrogen‐bonded infinite chains, demonstrating an `even–odd' effect of the length of the backbone alkyl chain.     

Dynamics of muons in the ferroelectric material KDP

Muon spin relaxation in zero field and longitudinal field was measured in single crystal samples of KH₂PO₄ (KDP) and KD₂PO₄ (DKDP) over a temperature range of 5 K to 300 K. At low temperatures, diamagnetic muons and muon substituted radicals with nuclear hyperfine coupling can be observed. For both KDP and DKDP, a minor change was observed in the dynamics of the muon below 140 K. Above 140 K, the mobility of the muon appears to increase and the diffusion rate becomes faster with increasing temperature. Only a small increase in the relaxation rate is observed in KDP due to the presence of theH ⁺, suggesting that the relaxation effects probably originate from the³¹P.     

Reduction of contact stress by use of relief notches

The photoelastic method is used to investigate the possibility of relieving the large local stresses that develop in the corners of a right angled indenter compressing a semi-infinite body by inducing geometric changes to the indenter/semi-infinite body configuration. It is shown that a circular notch cut along the free edges of the indenter can totally eliminate the large corner stresses. The notch, if placed along the interface edge of the half plane, can reduce the stress concentration, but never eliminate it. The results obtained have wide practical application.