The E1 capture amplitude in 12C(α,γ0) 16O

An excitation function of the ground-state γ₀-ray capture transition in ¹²C (α,γ)¹⁶O at θ_γ = 90^° was obtained in far geometry using six Ge detectors, where the study of the reaction was initiated in inverse kinematics involving a windowless gas target. The detectors observed predominantly the E1 capture amplitude. The data at E = 1.32 to 2.99 MeV lead to an extrapolated astrophysical S factor S _E1(E ₀) = 90±15 keV b at E ₀ = 0.3 MeV (for the case of constructive interference between the two lowest E1 sources), in good agreement with previous works. However, a novel Monte Carlo approach in the data extrapolation reveals systematic differences between the various data sets such that a combined analysis of all available data sets could produce a biased estimate of the S _E1(E ₀) value. As a consequence, the case of destructive interference between the two lowest E1 sources with S _E1(E ₀) = 8±3 keV b cannot be ruled out rigorously. Received: 6 June 2001 / Accepted: 26 July 2001     

Comparative study of the adsorption performance of a multi-sorbent bed (Carbotrap, Carbopack X, Carboxen 569) and a Tenax TA adsorbent tube for the analysis of volatile organic compounds (VOCs)

A comparison between two types of adsorbent tubes, the commonly used Tenax TA and a multi-sorbent bed (Carbotrap, Carbopack X, Carboxen 569) tube developed in our laboratory, has been done to evaluate their usefulness in the analysis of VOCs in ambient air. Duplicate indoor and outdoor samples of Tenax TA and multi-sorbent tubes of 10, 20, 40, 60 and 90 l were taken in Barcelona city (Spain) on July and October of 2009. Breakthrough values (defined as %VOCs found in the back tube) were determined for all sampling volumes connecting two sampling tubes in series. The analysis was performed by automatic thermal desorption (ATD) coupled with capillary gas chromatography (GC)/mass spectrometry detector (MSD). Significant differences between the concentrations obtained-from multi-sorbent bed and Tenax TA tubes are observed for the very volatile compounds (56 °C < boiling point < 100 °C and 4 kPa < vapour pressure (20 °C) < 47 kPa) (e.g. acetone, isopropanol, n-hexane) and for alcohols and chlorinated compounds (e.g. 1-butanol, carbon disulphide, dichloromethane, chloroform, carbon tetrachloride, trichloroethylene, tetrachloroethylene), being the concentrations found higher in multi-sorbent bed than in Tenax TA tubes. On the other hand, mainly all compounds with boiling points higher than 100 °C (except α-pinene, chlorinated and polar compounds) do not show significant differences between the obtained multi-sorbent bed and Tenax TA tube concentrations. For the concentrations obtained (5 ppt to 100 ppb), Tenax TA present high breakthrough values (from 0 to 77%) for mainly all compounds and sampling volumes studied. On the other hand, multi-sorbent bed tubes do not exhibit important breakthrough values for these compounds, except the VVOCs ethanol (for all sampled volumes), and acetone, dichloromethane and isopropanol (for sampling volumes over 40 l). The concentration differences observed between Tenax TA and multi-sorbent bed tubes are directly related to the high breakthrough values determined for Tenax TA adsorbent.     

Amorphous silicon diamond based heterojunctions with high rectification ratio

We have fabricated and characterized diamond based heterojunctions composed of homoepitaxial diamond (B-doped film: p type) and hydrogenated amorphous silicon (a-Si:H film: n-type). All devices include an intrinsic amorphous silicon interface (i-a-Si:H). (J–V) characteristics of a-Si:H heterojunctions measured from 300 K to 460 K present a very high rectification ratio (in the range 10⁸–10⁹) and a current density of 10 mA/cm² under 2 V of forward bias. The reverse current up to ? 4 V is below the detection limit in the whole temperature range. The devices present two regimes of operation indicating that more than one mechanism governs the carrier transport. These characteristics are compared with a Schottky barrier diode (SBD) using a tungsten carbide metal on top of the p-type diamond as a Schottky contact. The SBD device exhibits J–V characteristic with an ideality factor n close to one and the heterojunction follows this trend for low bias voltages whereas for bias voltage above 1 V a second regime with larger ideality factors n ~ 3.6 is observed. These results point out the prominent role of transport mechanisms at heterointerface between the a-Si:H layers and the p-type doped diamond which degrades the current injection. The breakdown voltage reached ? 160 V indicating the good quality of the deposited layers.     

Can the crystallization rate be independent from the crystallization enthalpy? The case of amorphous silicon

The crystallization enthalpy measured in a large series of amorphous silicon (a-Si) materials varies within a factor of 2 from sample to sample (Kail et al 2011 Phys. Status Solidi RRL 5 361). According to the classical theory of nucleation, this variation should produce large differences in the crystallization kinetics leading to crystallization temperatures and activation energies exceeding 550?°C and 1.7 eV, respectively, the 'standard' values measured for a-Si obtained by self-implantation. In contrast, the observed crystallization kinetics is very similar for all the samples studied and has no correlation with the crystallization enthalpy. This discrepancy has led us to propose that crystallization in a-Si begins in microscopic domains that are almost identical in all samples, independently of their crystallization enthalpy. Probably the existence of microscopic inhomogeneities also plays a crucial role in the crystallization kinetics of other amorphous materials and glasses.     

A new radical-based route to calothrixin B

[structure: see text] A high-yielding totally regioselective intramolecular homolytic acylation of a quinoline ring constitutes the key step in a new synthesis of the pentacyclic indolo[3,2-j]phenanthridine alkaloid calothrixin B.