Upper and lower bounds for the fixed spectrum frequency assignment problem

A survey of the results described in the authors PhD thesis (Montemanni 2001) is presented. The thesis, which was supervised by Prof. Derek H. Smith and Dr. Stuart M. Allen, has been defended in January 2002 at the University of Glamorgan (U.K.). The thesis proposes new heuristic algorithms, based on well-known meta-heuristic paradigms, and new lower bounding techniques, based on linear programming, for the fixed spectrum frequency assignment problem.Received: May 2003, Revised: May 2003, AMS classification: 90C27, 90C59,05C90, 90C05Roberto Montemanni: Present address: Istituto Dalle Molle di Studi sullIntelligenza Artificiale (IDSIA), Galleria 2, 6928 Manno-Lugano, Switzerland (e-mail: roberto@idsia.ch)     

Lower Bounds for the Height and Size of the Ideal Class Group in CM-Fields

 We prove that, under the assumption of the Generalized Riemann Hypothesis, the exponent of the ideal class group of a CM-field goes to infinity with its absolute discriminant. This gives a positive answer to a question raised by Louboutin and Okazaki [4]. Received September 10, 2001; in revised form April 5, 2002     

Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices

In this paper we review the radiative recombination processes occurring in semiconductor quantum wells and superlattices under different excitation conditions. We consider processes whose radiative efficiency depends on the photogenerated density of elementary excitations and on the frequency of the exciting field, including luminescence induced by multiphoton absorption, exciton and biexciton radiative decay, luminescence arising from inelastic excitonic scattering, and electron-hole plasma recombination.

Semiconductor quantum wells are ideal systems for the investigation of radiative recombination processes at different carrier densities owing to the peculiar wavefunction confinement which enhances the optical non-linearities and the bistable behaviour of the crystal. Radiative recombination processes induced by multi-photon absorption processes can be studied by exciting the crystal in the transparency region under an intense photon flux. The application of this non-linear spectroscopy gives direct access to the excited excitonic states in the quantum wells owing to the symmetry properties and the selection rules for artificially layered semiconductor heterostructures.

Different radiative recombination processes can be selectively tuned at exciting photon energies resonant with real states or in the continuum of the conduction band depending on the actual density of photogenerated carriers. We define three density regimes in which different quasi-particles are responsible for the dominant radiative recombination mechanisms of the crystal: (i) The dilute boson gas regime, in which exciton density is lower than 10¹⁰ cm^-2. Under this condition the decay of free and bound excitons is the main radiative recombination channel in the crystal. (ii) The intermediate density range (n < 10¹¹ cm^-2) at which excitonic molecules (biexcitons) and inelastic excitonic scattering processes contribute with additional decay mechanisms to the characteristic luminescence spectra. (iii) The high density range (n ?10¹² cm^-2) where screening of the Coulomb interaction leads to exciton ionization. The optical transitions hence originate from the radiative decay of free-carriers in a dense electron-hole plasma.

The fundamental theoretical and experimental aspects of the radiative recombination processes are discussed with special attention to the GaAs/Al _x Ga_1-x As and Ga _x In_1-x As/Al _y In_1-y As materials systems. The experimental investigations of these effects are performed in the limit of intense exciting fields by tuning the density of photogenerated quasi-particles and the frequency of the exciting photons. Under these conditions the optical response of the quantum well strongly deviates from the well-known linear excitonic behaviour. The optical properties of the crystal are then no longer controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated quasi-particles, resulting in dramatic changes of the emission properties of the semiconductor.

The systematic investigation of these radiative recombination processes allows us to selectively monitor the many-body induced changes in the linear and non-linear optical transitions involving quantized states of the quantum wells. The importance of these effects, belonging to the physics of highly excited semiconductors, lies in the possibility of achieving population inversion of states associated with different radiative recombination channels and strong optical non-linearities causing laser action and bistable behaviour of two-dimensional heterostructures, respectively.     

Synthesis of carbon nanotubes by CVD: Effect of acetylene pressure on nanotubes characteristics

The effect of acetylene partial pressure on the structural and morphological properties of multi-walled carbon nanotubes (MWCNTs) synthesized by CVD on iron nanoparticles dispersed in a SiO₂ matrix as catalyst was investigated. The general growing conditions were: 110 cm³/min flow rate, 690 °C synthesis temperature, 180 Torr over pressure and two gas compositions: 2.5% and 10% C₂H₂/N₂. The catalyst and nanotubes were characterized by HR-TEM, SEM and DRX. TGA and DTA were also carried out to study degradation stages of synthesized CNTs. MWCNTs synthesized with low acetylene concentration are more regular and with a lower amount of amorphous carbon than those synthesized with a high concentration. During the synthesis of CNTs, amorphous carbon nanoparticles nucleate on the external wall of the nanotubes. At high acetylene concentration carbon nanoparticles grow, covering all CNTs’ surface, forming a compact coating. The combination of CNTs with this coating of amorphous carbon nanoparticles lead to a material with high decomposition temperature.     

Critical clusters in interdependent economic sectors

In this paper we develop a data-driven hierarchical clustering methodology to group the economic sectors of a country in order to highlight strongly coupled groups that are weakly coupled with other groups. Specifically, we consider an input-output representation of the coupling among the sectors and we interpret the relation among sectors as a directed graph; then we recursively apply the spectral clustering methodology over the graph, without a priori information on the number of groups that have to be obtained. In order to do this, we resort to the eigengap criterion, where a suitable number of groups is selected automatically based on the intensity and structure of the coupling among the sectors. We validate the proposed methodology considering a case study for Italy, inspecting how the coupling among clusters and sectors changes from the year 1995 to 2011, showing that in the years the Italian structure underwent deep changes, becoming more and more interdependent, i.e., a large part of the economy has become tightly coupled.     

A numerical technique based on B-spline for a class of time-fractional diffusion equation

This paper presents an efficient numerical technique for solving a class of time-fractional diffusion equation. The time-fractional derivative is described in the Caputo form. The L1 scheme is used for discretization of Caputo fractional derivative and a collocation approach based on sextic B-spline basis function is employed for discretization of space variable. The unconditional stability of the fully-discrete scheme is analyzed. Two numerical examples are considered to demonstrate the accuracy and applicability of our scheme. The proposed scheme is shown to be sixth order accuracy with respect to space variable and (2 − α)-th order accuracy with respect to time variable, where α is the order of temporal fractional derivative. The numerical results obtained are compared with other existing numerical methods to justify the advantage of present method. The CPU time for the proposed scheme is provided.     

Temperature dependence of the time-resolved emissions of CsI:Tl

Abstract

Time-resolved emissions of Csl:T1 are investigated. The system is laser-excited in the A-band at 308 nm and the emissions are observed in the range 370–650 nm, from 30 K to 300 K. Their analysis by means of a deconvolution permits the valuation of decay-times down to 1 ns. At every temperature many bands are observed and some of them show slow and fast components. The decay-times of the fast components are in the range 1–10 ns while the slow ones are even longer than 1 μs. In many cases intermediate decay-times of the order of 100 ns exist. The competition among the bands interests the application of this system as active material for tunable solid-state laser.