首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   242806篇
  免费   3199篇
  国内免费   1457篇
化学   137559篇
晶体学   3332篇
力学   9408篇
综合类   61篇
数学   28411篇
物理学   68691篇
  2020年   2028篇
  2019年   2189篇
  2018年   2688篇
  2017年   2709篇
  2016年   4092篇
  2015年   2839篇
  2014年   3978篇
  2013年   10047篇
  2012年   8682篇
  2011年   10667篇
  2010年   7295篇
  2009年   7074篇
  2008年   9903篇
  2007年   10052篇
  2006年   9486篇
  2005年   8775篇
  2004年   7809篇
  2003年   6865篇
  2002年   6711篇
  2001年   7020篇
  2000年   5323篇
  1999年   3894篇
  1998年   3281篇
  1997年   3282篇
  1996年   3333篇
  1995年   2833篇
  1994年   2960篇
  1993年   2806篇
  1992年   3040篇
  1991年   3109篇
  1990年   2872篇
  1989年   2823篇
  1988年   2768篇
  1987年   2670篇
  1986年   2697篇
  1985年   3561篇
  1984年   3668篇
  1983年   3000篇
  1982年   3387篇
  1981年   3112篇
  1980年   2890篇
  1979年   3086篇
  1978年   3280篇
  1977年   3294篇
  1976年   3306篇
  1975年   3008篇
  1974年   3120篇
  1973年   3159篇
  1972年   2430篇
  1971年   1922篇
排序方式: 共有10000条查询结果,搜索用时 12 毫秒
41.
The direct regioselective C–H arylation of 3-methoxythiophene and 3,4-ethylenedioxythiophene (EDOT) was performed successfully under ‘Heck-type’ experimental conditions. This novel synthetic methodology has been used to prepare in a more simple way a series of oligothiophenes interesting for the electronic industry to build new synthetic organic materials.  相似文献   
42.
(S)-2-[2-(p-Tolylsulfinyl)phenyl]acetaldehyde reacts with different O-silylated ketenethioacetals in the presence of Yb(OTf)3 yielding β-hydroxythioesters in high yields and diastereoselectivities. The obtained compounds were readily transformed into β-hydroxyacids and their corresponding diols. These Mukaiyama aldol reactions are a direct evidence of the ability of the sulfinyl group to control 1,5- and 1,6-asymmetric induction processes.  相似文献   
43.
An overview of theoretical and experimental studies of the coherent type-B e + e-pair production by photons in aligned crystals performed at Nuclear Physics Institute at Tomsk Polytechnic University is given.  相似文献   
44.
45.
46.
We analyze diffusion from a periodic array of hemispherical droplets through a membrane. We find that the multiple sources do not interact strongly, even when the droplets are closely spaced, so that the flux through the membrane appears nearly additive.  相似文献   
47.
48.
49.
Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.  相似文献   
50.
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime. PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号