One-dimensional photonic crystal design

In this article we present a method to determine the band spectrum, band gaps, and discrete energy levels, of a one-dimensional photonic crystal with localized impurities. For one-dimensional crystals with piecewise constant refractive indices we develop an algorithm to recover the refractive index distribution from the period map. Finally, we derive the relationship between the period map and the scattering matrix containing the information on the localized modes.     

Polar decompositions and related classes of operators in spaces ∏κ

Polar decompositions with respect to an indefinite inner product are studied for bounded linear operators acting on a space. Criteria are given for existence of various forms of the polar decompositions, under the conditions that the range of a given operatorX is closed and that zero is not an irregular critical point of the selfadjoint operatorX ^[*]X. Both real and complex spaces are considered. Relevant classes of operators having a selfadjoint (in the sense of the indefinite inner product) square root, or a selfadjoint logarithm, are characterized.The work of this author was partially supported by INdAM-GNCS and MURSTThe work of this author was partially supported by NSF grant DMS-9988579.     

Excitation pulse deconvolution in luminescence lifetime analysis for oxygen measurements in vivo

Oxygen-dependent quenching of phosphorescence has been proven to be a valuable tool for the measurement of oxygen concentrations both in vitro and in vivo. For biological measurements the relatively long lifetimes of phosphorescence have promoted time-domain-based devices using xenon arc flashlamps as the most common excitation light source. The resulting complex form of the excitation pulse leads to complications in the analysis of phosphorescence lifetimes and ultimately to errors in the recovered pO2 values. Although the problem has been recognized, the consequences on in vivo phosphorescence lifetime measurements have been neglected so far. In this study, the consequences of finite excitation flash duration are analyzed using computer simulations, and a method for the recovery of phosphorescence decay times from complex photometric signals is presented. The analysis provides an explanation as to why different calibration constants are reported in the literature and presents a unified explanation whereby calibration constants are not solely a property of the dye but also of the measuring device. It is concluded that complex excitation pulse patterns without appropriate analysis methods lead to device-specific calibration constants and nonlinearity and can be a potent source of errors when applied in vivo. The method of analysis presented in this article allows reliable phosphorescence lifetime measurements to be made for oxygen pressure measurements and can easily be applied to existing phosphorimeters.     

3H‐1,2‐Dithiole‐3‐thione derivatives as novel solvatochromic dyes

The UV–Vis spectrum of 5‐(1‐butylthio)‐3H‐1,2‐dithiole‐3‐thione (1a) and that of the chromium pentacarbonyl complex of 5‐methyl‐3H‐1,2‐dithiole‐3‐thione (3) present significant changes with the solvent polarity. The two absorption bands shown by the compounds in the region above 300 nm were identified by theoretical calculations. For Compound 1a these are n→π^* and →π^* transitions and for Compound 3 the longest wavelength absorption corresponds to a charge transfer band and shows a remarkably negative solvatochromism. Not only has the wavelength of maximum absorption changed with the solvent but also the ratio of the absorbances at the two wavelengths. The effect of solvents was correlated with solvatochromic parameters such as π^* and α. The spectrum of 5‐(1‐butylthio)‐3H‐1,2‐dithiole‐3‐one ( 2 ) was also measured in different solvents but in this case the changes observed are less significant than for the other two compounds. The spectra of 1a and 3 were also determined in the presence of anionic (SDS), cationic (CTAB), and neutral surfactants (Brig‐35) and it is shown that these compounds can be used as probes for the polarity of the binding sites of organized assemblies. Copyright © 2008 John Wiley & Sons, Ltd.     

The effect of low intra-sublattice repulsion on phase diagram of YBa2Cu3O6+x : A Monte Carlo simulation study

We report the results of Monte Carlo simulation of the phase diagram and oxygen ordering in YBa₂Cu₃O_6+x for low intra-sublattice repulsion. At low temperatures, apart from tetragonal (T), orthorhombic (OI) and ‘double cell’ ortho II phases, there is evidence for two additional orthorhombic phases labelled here asOI andOIII. At high temperatures, there was no evidence for the decomposition of theOI phase into theT andOI phases. We find qualitative agreement with experimental observations and cluster-variation method results.     

Reactivity of 2-ethoxy-5-alkyl-3,4-dihydro-2H-pyrans towards aluminum alkyls : a facile synthesis of cyclobutylmethanols

2-Ethoxy-5-alkyl-3,4-dihydro-2H-pyrans react with Albuⁱ₃ and through a regioselective hydride addition provide substituted cyclobutylmethanols in very good yields.     

Alloy contribution to phonon softening in ultra-heavily doped Si:As

Experimentally observed phonon softening of the 520 cm^-1 Raman line in ultra-heavily doped n-Si is attributed to the electron-phonon self-energy effects as well as change in lattice force constants of the alloy system.     

Direct evidence for As as a Zn-site impurity in ZnO

Arsenic has been reported in the literature as one of the few p-type dopants in the technologically promising II-VI semiconductor ZnO. However, there is an ongoing debate whether the p-type character is due to As simply replacing O atoms or to the formation of more complicated defect complexes, possibly involving As on Zn sites. We have determined the lattice location of implanted As in ZnO by means of conversion-electron emission channeling from radioactive (73)As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites but in its large majority substitutional Zn sites. Arsenic in ZnO (and probably also in GaN) is thus an interesting example for an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system.