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31.
The ZFITTER project is aimed at the computation of high-precision theoretical predictions for various observables in high-energy electron-positron annihilation and other processes. The stages of the project development are described. Accent is made on applications to the analysis of LEP data. The present status of the project and perspectives are given as well.  相似文献   
32.
We perform a new, recursive reduction of one-loop n-point rank R   tensor Feynman integrals [in short: (n,R)(n,R)-integrals] for n?6n?6 with R?nR?n by representing (n,R)(n,R)-integrals in terms of (n,R−1)(n,R1)- and (n−1,R−1)(n1,R1)-integrals. We use the known representation of tensor integrals in terms of scalar integrals in higher dimension, which are then reduced by recurrence relations to integrals in generic dimension. With a systematic application of metric tensor representations in terms of chords, and by decomposing and recombining these representations, a recursive reduction for the tensors is found. The procedure represents a compact, sequential algorithm for numerical evaluations of tensor Feynman integrals appearing in next-to-leading order contributions to massless and massive three- and four-particle production at LHC and ILC, as well as at meson factories.  相似文献   
33.
We calculate the standard model predictions for top quark pair production and decay into six fermions at a linear e+e- collider. We include the factorizable electroweak $\mathcal{O}(\alpha)$ corrections in the pole approximation and QED corrections due to the initial state radiation in the structure function approach. The effects of the radiative corrections on the predictions are illustrated by showing numerical results for two selected six-fermion reactions $e^+e^-\rightarrow b\nu_{\mu}\mu^+\bar{b}\mu^-\bar{\nu}_\mu$ and $e^+e^-\rightarrow b\nu_{\mu}\mu^+\bar{b}d\bar{u}$ .  相似文献   
34.
We report about optical and structural investigations of a self-aligned single electron transistor (SET) structure using cathodoluminescence-(CL) and transmission electron microscopy (TEM). The SET structures were fabricated by MBE growth of GaAs/AlAs on different prepatterned GaAs (1 0 0) substrates. This technique for the in situ formation of nanoscopic semiconductor heterostructures is presently a widely used and promising approach for the fabrication of low-dimensional systems like quantum wires and quantum dots (QD). The active region of the SET structure consists of a GaAs/AlGaAs-QD formed by thickness modulation of a single quantum well (SQW) during the MBE growth. The position and the size of the QD is defined by the design of the substrate pattern. The thickness modulation of the GaAs-SQW is evidenced by TEM investigations. The lateral confinement potential given by the thickness modulation of GaAs-SQW is directly imaged by CL microscopy.  相似文献   
35.
36.
Expectations for constraints on extra Z bosons are derived for LEP2 and future linear e+e? colliders. For typical GUTs, a Z′ with MZ′ ≤ 3 to $6sqrt {s}$ may cause observable effects. The Z′ discovery limits are dominated by statistical errors. However, if a Z′ signal is observed, the discrimination between different models becomes much worse if systematic errors are taken into account. Discrimination between models is possible for $M_{Z^{?ime}} < 3sqrt {s}$. A determination of Z′ff couplings independently of models becomes attractive with future colliders. Anticipated bounds are determined.  相似文献   
37.
The complete standard model corrections together with the QED contributions from an additionalZ boson to the forward backward asymmetry of the reactione + e ?→(ψ,Z, Z′, ...)→f + f + are calculated. They include soft photon exponentiation and a cut on the photon energy. Some numerical applications are considered forE 6 generated extraZ bosons. Though being small at TRISTAN and LEP1 energies, the QED corrections due toZ′ exchange are very important near and above theZ′ peak.  相似文献   
38.
Stimulated Stokes emission has been observed from silicon crystals doped by antimony donors when optically excited by radiation from a tunable infrared free electron laser. The photon energy of the emission is equal to the pump photon energy reduced by the energy of the intervalley transverse acoustic (TA) g phonon in silicon (approximately 2.92 THz). The emission frequency covers the range of 4.6-5.8 THz. The laser process occurs due to a resonant coupling of the 1s(E) and 1s(A1) donor states (separation approximately 2.97 THz) via the g-TA phonon, which conserves momentum and energy within a single impurity center.  相似文献   
39.
An experiment (E166) at the Stanford Linear Accelerator Center has demonstrated a scheme in which a multi-GeV electron beam passed through a helical undulator to generate multi-MeV, circularly polarized photons which were then converted in a thin target to produce positrons (and electrons) with longitudinal polarization above 80% at 6 MeV. The results are in agreement with GEANT4 simulations that include the dominant polarization-dependent interactions of electrons, positrons, and photons in matter.  相似文献   
40.
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