Experimental study on laser cleaning of paint layer on white marble surface北大核心CSCD

In order to effectively remove the surface paint of the cultural relic of white marble, the area extrapolation method and laser-induced plasma spectroscopy (LIPS) method were used to obtain the ablation threshold power of the gold, silver paint layer and white marble surface. On the basis of this, the optimal laser power for removing paint without damaging the white marble substrate was determined. The image processing method was used to study the cleaning degree and variation trend of cleaning rate of the gold and silver paint on the surface of 10 mm×10 mm white marble by laser cleaning, and the optimal laser spot overlap rate and the optimal cleaning times were obtained. Finally, the image processing method was used to evaluate the cleaning effect of laser cleaning of paint layer on the white marble surface. More than 93% of the cleaning degree shows that the synergistic use of the area extrapolation method, LIPS method and image processing method can effectively improve the laser cleaning efficiency of the paint layer on white marble surface. Copyright ©2022 Journal of Applied Optics. All rights reserved.     

Topological defect states and phase transitions in mesoscopic superconducting squares with Rashba spin–orbit interaction

The European Physical Journal B - A circuit made of a phototube in series with a linear resistor connected in parallel to a resistor–capacitor shunted Josephson junction (JJ) is proposed to...     

Metal-cation-based anion exchange membranes

Here we present the first metal-cation-based anion exchange membranes (AEMs), which were synthesized by copolymerization and cross-linking of a norbornene monomer functionalized with a water-soluble bis(terpyridine)ruthenium(II) complex and dicyclopentadiene. Each ruthenium complex has two associated counteranions, unlike most ammonium- and phosphonium-based membranes with single cation-anion pairs. The resulting AEMs show anion conductivities and mechanical properties comparable to those of traditional quaternary-ammonium-based AEMs as well as good alkaline stability and methanol tolerance. These results suggest that metal-cation-based polymers hold promise as a new class of materials for anion-conducting applications.     

Fractal analysis on human dynamics of library loans

In this paper, the fractal characteristic of human behaviors is investigated from the perspective of time series constructed with the amount of library loans. The values of the Hurst exponent and length of non-periodic cycle calculated through rescaled range analysis indicate that the time series of human behaviors and their sub-series are fractal with self-similarity and long-range dependence. Then the time series are converted into complex networks by the visibility algorithm. The topological properties of the networks such as scale-free property and small-world effect imply that there is a close relationship among the numbers of repetitious behaviors performed by people during certain periods of time. Our work implies that there is intrinsic regularity in the human collective repetitious behaviors. The conclusions may be helpful to develop some new approaches to investigate the fractal feature and mechanism of human dynamics, and provide some references for the management and forecast of human collective behaviors.     

HT-7托卡马克slide-away放电充气对等离子体行为的影响

本文研究了slide-away放电条件下的等离子体约束性能;分析了充气对等离子体约束性能以及反常多普勒共振不稳定性的影响.研究了等离子体密度的提升对slide-away放电过程中逃逸电子辐射行为的影响.研究结果发现:slide-away放电充气可以抑制逃逸电子反常多普勒不稳定性,但是使得等离子体约束状态变差,逃逸电子辐射增强.     

高功率微波作用下热载流子引起n型金属-氧化物-半导体场效应晶体管特性退化研究

高功率微波(HPM)通过使半导体器件特性退化和功能失效,从而干扰电子系统无法正常工作. 针对金属氧化物半导体(MOS)器件的HPM效应, 建立了高功率微波引起n型金属氧化物半导体场效应晶体管(nMOSFET)特性退化的物理过程与模型. 器件仿真结果中nMOSFET的输出特性曲线显示栅极注入HPM引起器件特性退化,包括阈值电压正向漂移、 饱和电流减小、跨导减小等;结合物理模型分析可知, HPM引起的高频脉冲电压使器件进入深耗尽状态, 热载流子数目增多,热载流子效应导致器件特性退化. MOS器件的HPM注入实验结果显示,器件特性曲线、器件模型参数变化趋势与仿真结果一致, 验证了HPM引起nMOSFET特性退化的物理过程与模型.     

Calculations of the vibrational frequency and isotopic shift of UF6 and U2F6

Molecular structure, vibrational frequency and infrared intensity of UF6 are investigated by using the revised Perdew Burke-Enzerhof function with the triple-zeta polarized basis set. The calculation results are in good agreement with the experimental values and indicate the existence of a stable U2F6 molecule with a multiple bonded U2 unit. The calculation results also predict that the D3d symmetry of U2F6 is more stable than D3h. The optimized geometries, vibrational frequencies, and infrared intensities are also reported for U2F6 molecules in D3d symmetry. In addition, the isotopic shift of vibrational frequencies of the two molecules under isotopic substitution of uranium atom are also investigated with the same method. The U2F6 molecule is predicted to be better than UF6 for laser uranic isotope separation.     

Charged vortex structure in high-temperature superconductors

By using a model Hamiltonian with competing antiferromagnetic (AFM) spin density wave (SDW) and d-wave superconductivity orders, the effect of next-nearest-neighbour (nnn) hopping on spin and charge structures in high-temperature superconductors is investigated at finite temperatures. For an optimally doped sample, we find that the AFM order magnitude in the vortex core is firstly enhanced and then suppressed, accompanied with a ``positively → negatively → positively" charged vortex structure transition with increasing nnn hopping strength, which implies that the AFM order is unnecessarily bounded to an electron-rich vortex core. In addition, a charge ordering pattern with four negatively charged peaks localized in a small region is also found around the vortex core centre without net charge. Recent scanning-tunneling-microscopy experimental observations of the checkerboard structure are hopefully understood.     

葡聚糖的基体辅助激光解吸/电离飞行时间质谱测定

采用自行设计合成的新基体α-腈基阿魏酸（α-cyano-ferulic acid,简称CFA）并应用激光飞行时间质谱仪的离子偏转功能,对葡聚糖的分子量进行了测定研究。结果表明：与测定糖类物质的常用基体2,5-二羟基苯甲酸（DHB）相比,CFA测定葡聚糖,具有更佳的解吸电离效果,样品易出峰、重现性好、信噪比高;使用仪器的离子偏转器,阻止葡聚糖样品中聚合度较小的离子进入检测器,能显著提高仪器对聚合度较大离子的检测能力,得到质荷比（m/z)更高的质谱峰。     

低能质子在半导体材料Si 和GaAs中的非电离能损研究

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.由于低能时库仑相互作用占主导地位,一般采用Mott-Rutherford微分散射截面,但它没考虑核外电子库仑屏蔽的影响.为此,本文采用解析法和基于Monte-Carlo方法的SRIM程序计算了考虑库仑屏蔽效应后低能质子在半导体材料Si,GaAs中的NIEL,SRIM程序在计算过程中采用薄靶近似法, 并与其他作者的计算数据和实验数据进行了比较.结果表明：用SRIM程序计算NIEL时采用薄靶近似法处理是比较合理的,同时考虑库仑 关键词： 低能质子 非电离能损 硅 砷化镓