Fabrication of rhenium Josephson junctions

Rhenium is a superconductor with a relatively weak tendency to oxidize, which is advantageous in superconducting quantum circuit and qubit applications. In this work, Re/A1-A1Ox/Re Josephson tunnel junctions were fabricated using a selective film-etching process similar to that developed in Nb trilayer technology. The Re films had a superconducting transition temperature of 4.8 K and a transition width of 0.2 K. The junctions were found to be highly reproducible using the fabrication process and their characteristics had good quality with a low leakage current and showed a superconducting gap of 0.55 meV.     

Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.     

Charge state effect on the K-shell ionization of iron by xenon ions near the Bohr velocity

Fe K-shell ionization cross sections induced by 2.4–6.0 MeV Xe20+are measured and compared with different binaryencounter-approximation(BEA)models.The results indicate that the BEA model corrected both by the Coulomb repulsion and by the effective nuclear charge(Zeff)agrees well with the experimental data.Comparison of Fe K-shell X-ray emission induced by 5 MeV xenon ions with different initial charge states(20+,22+,26+,30+)verifies the applicability of the effective nuclear charge(Zeff)correction for the BEA model.It is found that Zeffcorrection is reasonable to describe direct ionization induced by xenon ions with no initial M-shell vacancies.However,when the M shell is opened,the Zeffcorrected BEA model is unable to explain the inner-shell ionization,and the electron transfer by molecular-orbital promotion should be considered.     

Experimental investigation of a flowing fluid layer on metal surface roughness measurement and aberration correction using adaptive optics

The induced optical aberration of laser beam passing through a transparent flowing fluid layer on a metal specimen is experimentally and empirical formula studied. The proposed study presents an experimental investigation of metal surface roughness measurement by combining an optical probe of laser-scattering phenomena and adaptive optics (AO) for aberration correction. In the absence of the AO correction scheme, induced flow velocity of 0.278 m/s can severely degrade the residual wavefront root mean square (RMS) error to 0.58 μm and decrease the scattered laser intensity. Real-time AO correction in closed-loop at a sampling rate of 8Hz can reduce the wavefront RMS error to 0.19 μm and improve the attenuation of scattered laser intensity. The maximum relative error of the estimated roughness (R _a) is less than 7.8% compared with the stylus method. The experimental results show satisfactory correction in the presence of a flowing fluid layer using the AO system.     

复杂网络中节点重要性排序的研究进展

如何用定量分析的方法识别超大规模网络中哪些节点最重要, 或者评价某个节点相对于其他一个或多个节点的重要程度, 这是复杂网络研究中亟待解决的重要问题之一. 本文分别从网络结构和传播动力学的角度, 对现有的复杂网络中节点重要性排序方法进行了系统的回顾,总结了节点重要性排序方法的最新研究进展, 并对不同的节点重要性排序指标的优缺点以及适用环境进行了分析, 最后指出了这一领域中几个有待解决的问题及可能的发展方向. 关键词： 复杂网络 节点重要性 网络结构 传播动力学     

Imprints of molecular orbitals using photoelectron angular distribution by strong laser pulses of circular polarization

We theoretically investigate the strong-field ionization of H+2 molecules in four different electronic states by calculating photoelectron angular distributions in circularly polarized fields. We find that the structure of photoelectron angular distribution depends on the molecular orbital as well as the energy of the photoelectron. The location of main lobes changes with the symmetric property of the molecular orbital. Generally, for molecules with bonding electronic states, the photoelectron's angular distribution shows a rotation of π/2 with respect to the molecular axis, while for molecules with antibonding electronic states, no rotation occurs. We use an interference scenario to interpret these phenomena. We also find that, due to the interference effect, a new pair of jets appears in the waist of the main lobes, and the main lobes or jets of the photoelectron's angular distribution are split into two parts if the photoelectron energy is sufficiently high.     

高效率的蓝色磷光有机电致发光器件

制备了基于双母体结构的高效率蓝色磷光有机电致发光器件。通过与采用单母体结构和双发光层结构的器件性能进行对比,发现双母体结构的应用对蓝光器件的性能起到了明显的提升作用。双母体蓝光器件的最大效率为14.9 cd/A(13.3 lm/W),最大亮度达到10 440 cd/m~2,其开启电压仅为2.7 V。蓝光器件同时展示出低的效率滚降特性,在100~5 000 cd/m~2范围内,器件的效率滚降仅为35.3%。在3~8 V的电压变化内,器件的色坐标一直位于蓝光区域。     

Study on anti-emission materials for non-emitting grid applications in microwave power tubes

Hafnium and platinum were deposited onto molybdenum grids by ion-beam assisted deposition method. Electron-emission characteristics from molybdenum grids with Hf and Pt films, which were contaminated by active electron-emission substances (Ba, BaO) of the cathode, were measured using analogous diode method. The surfaces of grids were analyzed by X-ray diffraction. The results revealed that the reaction between BaO and Hf formed BaHfO₃ compound, which greatly reduced the accumulation of BaO on the surface and accordingly decreased grid emission. In contrast, Ba were formed by the decomposition of BaO on the surface of Pt film under high temperature and re-evaporated from its surface, which reduced the active electron-emission substances on the surface of the grid and effectively restrained grid emission. Their mechanisms for grid-emission suppression are discussed and a good method to develop new grid-coating materials is suggested.     

Annealing and measurement temperature dependence of W2B5-based rectifying contacts to n-GaN

The thermal stability and measurement temperature dependence of Schottky contact characteristics on n-GaN using a W₂B₅/Ti/Au metallization scheme was studied using current-voltage (I-V), scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) measurements. The elemental profile obtained from samples annealed at 350 °C showed some titanium diffusion into the gold layer but little other difference from the as-deposited wafer. Annealing at 700 °C produced significant diffusion of titanium. The Schottky barrier height increased with anneal temperature up to 200 °C, reaching a maximum value of 0.65 eV, but decreased at higher annealing temperatures. The reverse breakdown voltage from diodes fabricated using the W₂B₅-based contacts showed a similar dependence. The reverse current magnitude was larger than predicted by thermionic emission alone. The barrier height showed only minor changes with measurement temperature up to 150 °C.