Experimental flow study over a blunt-nosed axisymmetric body at incidence

The flowfield over a blunt-nosed cylinder was examined experimentally at a low subsonic speed for Re=1.88×10⁵ and angles of attack up to 40°. Velocity measurements were carried out (employing a seven-hole Pitot tube) as well as wall static pressure and wall shear-stress measurements. Surface flow visualization was applied using liquid crystals and a mixture of oil–TiO₂. For all the examined cases no flow asymmetries were found. For high angles of attack (20° and above) a separation “bubble” appears at the leeside of the nose area (streamwise flow separation). The basic feature of the circumferential pressure distribution at the after body area for these angles of attack is a plateau close to the suction peak and a fast recovery next to it. One streamwise vortex on each side of the symmetry plane is formed as well as a separation bubble about 90° far from this plane, where the cross-flow primary separation line is located. Each cross-flow primary separation line starts at the leeside nose area and moves towards the windward side along the cylindrical after body. The space between the two primary separation lines close to the wall is characterized by high flow fluctuations on the leeside, compared to the low fluctuations of the windward side.     

Electron spin lifetimes in Hg0.78Cd0.22 Te and InSb

We have made direct pump–probe measurements of spin lifetimes in long wavelength narrow-gap semiconductors at wavelengths between 4 and 10 μm and from 4 to 300 K. In particular, we measure remarkably long spin lifetimes, τ_s300 ps, even at 300 K for epilayers of degenerate n-type InSb. In this material the mobility is approximately constant between 77 and 300 K, and we find that τ_s is approximately constant in this temperature range. In order to determine the dominant spin relaxation mechanism we have investigated the temperature dependence of τ_s in non-degenerate lightly n-type Hg_0.78Cd_0.22Te of approximately the same band gap as InSb, and find that τ_s varies from 356 ps at 150 K to 24 ps at 300 K. Our results, both in magnitude and temperature dependence of τ_s, imply that the Elliott–Yafet model dominates in these materials.     

Resonant Raman scattering by strained and relaxed germanium quantum dots

This paper reports on the results of resonant Raman scattering investigations of the fundamental vibrations in Ge/Si structures with strained and relaxed germanium quantum dots. Self-assembled strained Ge/Si quantum dots are grown by molecular-beam epitaxy on Si(001) substrates. An ultrathin SiO₂ layer is grown prior to the deposition of a germanium layer with the aim of forming relaxed germanium quantum dots. The use of resonant Raman scattering (selective with respect to quantum dot size) made it possible to assign unambiguously the line observed in the vicinity of 300 cm^?1 to optical phonons confined in relaxed germanium quantum dots. The influence of confinement effects and mechanical stresses on the vibrational spectra of the structures with germanium quantum dots is analyzed.     

Threshold character of the magnetoplastic effect in twinning of bismuth crystals

It is found that, when a bismuth crystal is subjected simultaneously to concentrated loading and a dc magnetic field, the magnetoplastic effect manifests itself as an abrupt decrease in the average length of wedge twins on the (111) cleavage plane (and, hence, as a decrease in the total twinned volume of the crystal) as a threshold value of the magnetic field is reached. However, the magnetic field stimulates glide deformation, which is indicated by an increase in the size of dislocation rosettes. The microhardness of a crystal varies smoothly and tends to increase with increasing magnetic field. The last phenomenon is accounted for by hardening of the crystal under the indenter in the presence of a magnetic field, because several slip systems become operative.     

Exact value of conjugate ion current in an electrolyte in the Gurevich-Kharkats diffusion-migration model

The exact solution of the problem of ion transport current in an electrolyte in the presence of a conjugate flow of solvent is obtained in the framework of the one-dimensional Gurevich-Kharkats diffusion-migration model; the conditions for the existence of the solution are analyzed.     

Stimulated raman scattering in fiber-optic communication lines

Stimulated Raman scattering (SRS) in a long-distance fiber-optic communication line with wavelength-division multiplexing (WDM) is studied theoretically at a high power of the signal transmitted. A new criterion for determining the SRS threshold is used to calculate the critical input power versus the number of optical channels and frequency separation between them. The theoretical model is verified experimentally. SRS interaction between two channels in a communication line with an SRS amplifier for which the optical waveguide of the line serves as a nonlinear medium is measured.