Rearrangement of 4,5α-epoxymorphinan derivatives with carbamoylepoxy rings provide novel oxazatricyclodecane structures

We describe the rearrangement of a carbamoylepoxy 4,5α-epoxymorphinan derivative that provided a novel 4,5α-epoxymorphinan derivative with an oxazatricyclodecane structure via an oxabicyclo[2.2.2]octane intermediate. We proposed the mechanism of the rearrangement reaction based on results observed in different deprotonation conditions. Epimerization occurred during rearrangement under reversible, but not irreversible, deprotonation conditions. The rearrangement product had a novel fundamental structure with moderate affinities for opioid receptors (K_i (μ)=47.7 nM, K_i (δ)=174.6 nM, and K_i (κ)=248.1 nM). Thus, the rearrangement products might have high potency as opioid ligands.     

Analysis of splice loss in single-mode fibres using a Gaussian field approximation

By using a Gaussian field approximation to the fundamental mode in a single-mode fibre, a very simple formula is derived for the splice loss in the two fibres when transverse, longitudinal and angular misalignments exist simultaneously. It is shown that the effects of the three misalignments on the splice loss are more significant for step-index fibres than for parabolic-index fibres, and also that matching oil in the gap between the fibres is effective for the end separation, but produces a reverse effect for the tilt. Calculated coupling efficiency between step-index fibres is compared with the experimental data reported so far, and good agreement between them is observed.     

Three-Quark Potential in SU(3) Lattice QCD

The static three-quark ( 3Q) potential is studied in SU(3) lattice QCD with 12(3)x24 and beta = 5.7 at the quenched level. From the 3Q Wilson loop, 3Q ground-state potential V(3Q) is extracted using the smearing technique for ground-state enhancement. With accuracy better than a few percent, V(3Q) is well described by a sum of a constant, the two-body Coulomb term, and the three-body linear confinement term sigma(3Q)L(min), with L(min) the minimal value of total length of color flux tubes linking the three quarks. Comparing with the Q-&Qmacr; potential, we find a universal feature of the string tension, sigma(3Q) approximately sigma(Q&Qmacr;), and the OGE result for Coulomb coefficients, A(3Q) approximately 1 / 2A(Q&Qmacr;).     

Second-harmonic generation and wave-front correction of a terawatt laser system

By combining second-harmonic generation and wave-front correction of a hybrid Ti:sapphire-Nd:glass terawatt laser chain, we were able to generate a focused intensity above 10(19) W/cm(2), with an estimated 10(9):1 intensity contrast ratio. The frequency of the laser is doubled by use of a type I KDP crystal, and wave-front correction is achieved with a deformable mirror coupled to a wave-front sensor.     

Surface cleaning of germanium nanodot ionization substrate for surface‐assisted laser desorption/ionization mass spectrometry

In surface‐assisted laser desorption/ionization mass spectrometry (SALDI‐MS), a chemical background signal, arising from organic contaminants such as plasticizers, is frequently observed mainly under m/z ca. 600, which impairs the advantages of the matrix‐free approach. Silver salts, which are used for the cationization of aromatic compounds, are also difficult to remove completely after the measurements. In this study, surface cleaning techniques used in semiconductor processing were used to clean our developed silicon‐based SALDI substrate on which self‐assembled germanium nanodots (GeNDs) had been deposited (termed a GeND chip). An immersion cleaning method using acetone with sonication, and a sulfuric‐peroxide mixture (SPM) cleaning method using a mixture of H₂SO₄/H₂O₂/deionized water, were examined for their effectiveness in removing organic compounds and residual silver salts. Removal of both types of contaminants was successfully performed by SPM cleaning. The limit of detection for glutathione was improved from ca. 5 pmol without cleaning to ca. 50 fmol after the SPM cleaning. Since GeND chips can tolerate acidic cleaning and sonication due to their chemical inertness and rigid nanodot structures, they appear to be an ideal reusable SALDI substrate. Copyright © 2009 John Wiley & Sons, Ltd.     

Dependence of photoluminescence of CdSe/ZnS on excitation wavelength

We have found that the photoluminescence (PL) intensity of CdSe/ZnS nanocrystals placed on a thin film of insulator (GaAsOx/GaAs) depends on excitation wavelength through the interference effects of the excitation light. By employing the multi-reflection/interference calculation, the insulator thickness of the underlying non-uniform patterns can be evaluated by the simple observation of CdSe/ZnS PL with a couple of excitation wavelengths. Moreover, the differences observed for the temporal evolution of CdSe/ZnS PL (blue shifts and degradation) among the excitation wavelengths suggest that the photo-induced changes of chemical composition and surface ligands are responsible for blue shifts and degradation, respectively.