Minimizing Maximum Weighted Error for Imprecise Computation Tasks

We consider the problem of preemptively scheduling a set of imprecise computation tasks on m ≥ 1 identical processors, with each task T_i having two weights, w_i and w′_i. Two performance metrics are considered: (1) the maximum w′-weighted error; (2) the total w-weighted error subject to the constraint that the maximum w′-weighted error is minimized. For the problem of minimizing the maximum w′-weighted error, we give an algorithm which runs in O(n³ log²n) time for multiprocessors and O(n²) time for a single processor. For the problem of minimizing the total w-weighted error subject to the constraint that the maximum w′-weighted error is minimized, we give an algorithm which also has the same time complexity.     

Optical Tunnelling from One-Dimensional Square-Well Potentials

The authors study a one-dimensional model for optical tunnellingwith a refractive index in the shape of a square well. The relevanceof the model and its limiting cases are discussed. The mainresult is the leading behaviour of the exponentially small imaginarypart of the eigenvalue which determines the radiation loss.The leading behaviour of the imaginary part is calculated usingBerry's formula which controls the asymptotic expansion of theAiry function Bi(z) to better-than-exponential accuracy.     

The epitaxial growth of gaas using alkylarsine: Part 2. molecular orbital calculation

Semi-empirical molecular orbital calculations were carried out for the compounds (C₂H₅)₃As, (C₂H₅)₃Ga and RAsH₂ (R = C₂H₅, i-C₃H₇, i-C₄H₉, and t-C₄H₉) by using the CNDO/2-U program, and their capability of β-elimination reaction is compared on the basis of the torsion energy to the transition state, electrostatic interactions and orbital overlapping between the central atom and the β-hydrogen, and bond order of the metal-carbon, and carbon-hydrogen bond. In the comparison of (C₂H₅)₃As with (C₂H₅)₃Ga, we found that the β-elimination of (C₂H₅)₃As could hardly be expected to take place in the thermal decomposition. The capability of β-elimination would be smaller in C₂H₅AsH₂ than that in (C₂H₅)₃As. Moreover when the ethyl group is replaced by a t-butyl group in RAsH₂, the β-elimination reaction appears to become more difficult and a large possibility for a radical process is suggested.     

Application of Novel Focusing Mirrors in Gyrotron Transmission Lines

A novel focusing mirror based on the shifting of the beam phase according to the Gaussian beam optics enabled us to realize a focusing elements with different focal lengths in different directions and to convert the gyrotron output into a Gaussian-like beam. In this paper, we compare the quality of beams produced by the new system (which includes novel mirrors) and a conventional system consisting of a quasi-optical antenna, an ellipsoidal mirror and two parabolic cylinder mirrors.     

Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia