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141.
A Jayanth Kumar N M Gowri R Venkateswara Raju G Nirmala B S Bellubbi T Radha Krishna 《Pramana》2006,67(2):383-387
Over the last two decades, the fiber optic technology has passed through many analytical stages. Some commercially available
fiber optic sensors, though in a small way, are being used for automation in mechanical and industrial environments. They
are also used for instrumentation and controls.
In the present work, an intensity-modulated intrinsic fiber optic sugar sensor is presented. This type of sensor, with slight
modification, can be used for on-line determination of the concentration of sugar content in sugarcane juice in sugar industry.
In the present set-up, a plastic fiber made of polymethylmethacrylate is used. A portion of the cladding (1 cm, 2 cm, 3 cm)
at the mid-point along the length of the fiber is removed. This portion is immersed in sugar solution of known concentration
and refractive index. At one end of the fiber an 850 nm source is used and at the other end a power meter is connected. By
varying the concentration of sugar solution, the output power is noted. These studies are made due to the change in refractive
index of the fluid. The device was found to be very sensitive which is free from EMI and shock hazards, stable and repeatable
and they can be remotely interfaced with a computer to give on-line measurements and thus become useful for application in
sugar industries. 相似文献
142.
Breathers in discrete nonlinear ferrimagnetic spin lattices are investigated for both easy-axis and easy-plane configurations.
The region in frequency space of the formation of breathers is determined and the anticontinuum limit discussed. The monochromatic
and the coloured breathers are found out numerically for different parameters and different conditions of excitations. 相似文献
143.
K. Singh S. Sihotra S. S. Malik J. Goswamy D. Mehta N. Singh R. Kumar R. P. Singh S. Muralithar E. S. Paul J. A. Sheikh C. R. Praharaj 《The European Physical Journal A - Hadrons and Nuclei》2006,27(3):321-324
The collective band structures of the 125Cs nucleus have been investigated by in-beam γ-ray spectroscopic techniques following the 110Pd ( 19F, 4n) reaction at 75MeV. The previously known level scheme, with rotational bands built on πg7/2, πg9/2 and πh11/2 orbitals, has been extended and evolves into bands involving rotationally aligned ν(h11/2)2 and π(h11/2)2 quasiparticles. A strongly coupled band has been reassigned a high-K πh11/2 ⊗ νg7/2 ⊗ νh11/2 three-quasiparticle configuration and a new side band likely to be its chiral partner has been identified. Configurations
assigned to various bands are discussed in the framework of Principal/Tilted Axis Cranking (PAC/TAC) model calculations. 相似文献
144.
Proton and alpha particle spectra have been measured in the 12C+93Nb and 12C+58Ni reactions at E(12C)=40 and 50 MeV and in the 16O + 93Nb reaction at E(16O) =75 MeV. The spectra are compared with the statistical model calculations. The shapes of the calculated spectra are in
agreement with experimental data except for the alpha spectrum in the 12C + 93Nb reaction at 40 MeV. The observed evaporation bump is at ∼2 MeV lower energy compared to the calculated one. This discrepancy
could imply alpha particle emission from a deformed configuration before compound nucleus formation at this near Coulomb barrier
beam energy. 相似文献
145.
The mass spectrum ofcb meson is investigated with an effective quark-antiquark potential of the form -αc/r +Ar
νwith ν varying from 0.5 to 2.0. TheS andP-wave masses, pseudoscalar decay constant, weak decay partial widths in spectator model and the lifetime ofB
cmeson are computed. The properties calculated here are found to be in good agreement with other theoretical and experimental
values at potential index,ν = 1 相似文献
146.
We report on the calculations related to the electronic structure of ZnO, CdO, MgO, ZnMgO2 and ZnCdO2 in the wurtzite, rocksalt and chalcopyrite structures. From this study we found that ZnO and MgO are of direct band semiconductor, CdO is of semi metallic in nature. ZnMgO2 and ZnCdO2 are direct band semiconductors. From the energy considerations, we found that ZnMgO2 and ZnCdO2 are more stable in chalcopyrite structure rather than in rocksalt structure. Using the calculated band gap values, the bowing parameter for ZnMgO2 and ZnCdO2 is deduced and found to be in agreement with the reported value. 相似文献
147.
Dipak Ghosh Argha Deb Swarup Ranjan Sahoo Kanchan Kumar Patra Prabir Kumar Haldar Jayita Ghosh 《Czechoslovak Journal of Physics》2002,52(6):789-794
An analysis of data of target fragments of 28Si-AgBr (at 14.5 AGeV) reveals the existence of emission asymmetry in the azimuthal plane, which is found to depend on the number of target fragments. The comparison with the data of 32S-AgBr (at 200 AGeV) and 16O-AgBr (at 60 AGeV) interactions indicates that emission asymmetry depends on the projectile mass and energy. 相似文献
148.
Q. Sun Q. Wang X.G. Gong V. Kumar Y. Kawazoe 《The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics》2002,18(1):77-81
We report results of the atomic and electronic structures of Al7C cluster using ab initio molecular dynamics with ultrasoft pseudopotentials and generalized gradient approximation. The lowest energy structure is
found to be the one in which carbon atom occupies an interstitial position in Al7 cluster. The electronic structure shows that the recent observation [Chem. Phys. Lett. 316, 31 (2000)] of magic behavior of Al7C- cluster is due to a large highest occupied and lowest unoccupied molecular orbital (HOMO-LUMO) gap which makes Al7C- chemically inert. These results have further led us to the finding of a new neutral magic cluster Al7N which has the same number of valence electrons as in Al7C- and a large HOMO-LUMO gap of 1.99 eV. Further, calculations have been carried out on (Al7N)2 to study interaction between magic clusters.
Received 28 July 2001 相似文献
149.
Mirgender Kumar Sarvesh Dubey Pramod Kumar Tiwari S. Jit 《Current Applied Physics》2013,13(8):1778-1786
The Silicon–Germanium-on-Insulator (SGOI) and Silicon-on-Insulator (SOI) based MOS structures are spearheading the strained-Si technology. The present work compares the subthreshold characteristics of two short-channel back-gated (BG) strained-Si-on-SGOI (SSGOI) and BG strained-Si-on-Insulator (SSOI) MOSFETs, and provides some solutions to overcome the degradation in subthreshold characteristics with the unrelenting downscaling of the devices. Subthreshold behaviors of the MOS structures are based on surface potential model which is determined by solving the 2D Poisson's equation with suitable boundary conditions by evanescent mode analysis for both of the MOS structures. The closed form expressions for threshold voltage, subthreshold current and subthreshold swing have been derived for symmetrical as well as independent gate operation (IGO). In addition, the Electrostatic integrity (EI) factors for SSOI and SSGOI MOS structures have been estimated and compared with Double-Gate (DG) MOSFET. The numerical simulation results, obtained by ATLAS?, a 2D device simulator from Silvaco, have been used to assess the validity of the models. 相似文献
150.
The photoacoustic (PA) spectrum of naphthalene cation in boric acid glass, in the region 250–400 nm is reported for the first tune and compared with its optical absorption spectrum. The energy levels for the ions are calculated using open shell Wasilewski method with limited configuration interaction and used to interpret the observed PA spectrum. 相似文献