The incorporation of oxygen impurities in semiconductor silicon in chemical vapour deposition

The incorporation of oxygen traces in chemical vapour deposited semiconductor silicon has been calculated for the temperature range of 1200–1500 K in dependence on the excess of hydrogen in the reaction gas. The results obtained correspond to the experimental data. With increasing temperatures of deposition and increasing excess of hydrogen the incorporation of oxygen decreases at a constant concentration of oxygen in the initial state.     

Emission of volatile sesquiterpenes and monoterpenes in grapevine genotypes following Plasmopara viticola inoculation in vitro

The grapevine (Vitis vinifera) is one of the most widely cultivated fruit crops globally, and one of its most important diseases in terms of economic losses is downy mildew, caused by Plasmopara viticola. Several wild Vitis species have been found to be resistant to this pathogen and have been used in breeding programs to introduce resistance traits to susceptible cultivars. Plant defense is based on different mechanisms, and volatile organic compounds (VOCs) play a major role in the response to insects and pathogens. Although grapevine resistance mechanisms and the production of secondary metabolites have been widely characterized in resistant genotypes, the emission of VOCs has not yet been investigated following P. viticola inoculation. A Proton Transfer Reaction‐Time of Flight‐Mass Spectrometer (PTR‐ToF‐MS) was used to analyze the VOCs emitted by in vitro‐grown plants of grapevine genotypes with different levels of resistance. Downy mildew inoculation significantly increased the emission of monoterpenes and sesquiterpenes by the resistant SO4 and Kober 5BB genotypes, but not by the susceptible V. vinifera Pinot noir. Volatile terpenes were implicated in plant defense responses against pathogens, suggesting that they could play a major role in the resistance against downy mildew by direct toxicity or by inducing grapevine resistance. The grapevine genotypes differed in terms of the VOC emission pattern of both inoculated and uninoculated plants, indicating that PTR‐ToF‐MS could be used to screen hybrids with different levels of downy mildew resistance. Copyright © 2015 John Wiley & Sons, Ltd.     

Nodal Solutions of a p-Laplacian Equation

We prove that the p-Laplacian problem –_p u = f(x, u),with u on a bounded domain R^N, with p > 1 arbitrary, has a nodal solution providedthat f : x R R is subcritical, and f(x, t) / |t|^p –² is superlinear. Infinitely many nodal solutions are obtainedif, in addition, f(x, –t) = –f(x, t). 2000 MathematicsSubject Classification 35J20, 35J65, 58E05.     

Comparative characterization of boron-implanted silicon after pulse laser annealing along single traces by SEM (SE,EBIC) and TEM studies

(111) oriented n-type silicon wafers which were implanted with 2 × 10¹⁵ B⁺/cm² at 77 K and at an energy of 60 keV are laser annealed (Nd:YAG pulse laser) in air for mean laser powers between P = 1.8 W and P = 4.0 W. The comparative application of scanning electron microscopy (SE, EBIC) and high voltage transmission electron microscopy (HVTEM, 1000 keV) allows an estimation of the annealing quality in separated lines without overlapping. Values specifically ascertained by SEM in the SE contrast mode for the annealing threshold power P _th, the power range for optimal annealing ΔP ₀ and for the geometric width of the monocrystalline resolidification perpendicular to the direction of the specimen movement (and related to the spot diameter) at different laser pulse powers P agree completely with the results found in EBIC. At an optimal laser pulse power of P ₀ = 3.2 W HVTEM enables monocrystalline epitaxially resolidified areas free of defects to be identified in the same geometric width as that ascertained by SE and EBIC.