Growth of copper phthalocyanine on hydrogen passivated vicinal silicon(1 1 1) surfaces

Using ultra-high vacuum scanning tunneling microscopy (UHV-STM), we show that copper-phthalocyanine (CuPc) grows in a well ordered manner on hydrogen passivated vicinal silicon surfaces. CuPc grows one-dimensionally parallel to the monatomic steps on the vicinal silicon surface. Surprisingly, elongated clusters of the CuPc parallel to the step directions are formed even on the middle of the terraces well away from the step edges. The one-dimensional growth mode continues even after the full monolayer coverage on the substrate which results in strongly oriented growth mode of a thin film of CuPc on the vicinal silicon surfaces.     

Laser-sintered mesoporous TiO2 electrodes for dye-sensitized solar cells

Low-temperature laser sintering has been successfully demonstrated to improve the overall conversion efficiency of dye-sensitized solar cells. Mesoporous TiO₂ electrodes were prepared from a colloidal solution of TiO₂ nanopowders by a laser direct-write technique and then sintered by a quasi-continuous-wave UV laser (λ=355 nm) for the fabrication of dye-sensitized solar cells. The overall conversion efficiency of the cells based on the laser-sintered TiO₂ electrodes was double that of the devices with non-laser-treated TiO₂ electrodes. This enhancement is attributed to both the removal of organic additives and the improved inter-nanoparticle electrical contacts induced by the laser-sintering process, which led to an increase in porosity and dye-absorption sites in the TiO₂ electrodes. PACS 61.80.Ba; 61.46.+w; 73.22.-f; 84.60.Jt     

Nanostructure characterization of high k materials by spectroscopic ellipsometry

In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 °C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 °C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering.     

Electro-optic pulse response of ferroelectric liquid crystals

The electro-optic response of ferroelectric smectic C* liquid crystals has been studied. Anomalous switching behaviour of such materials which possess a negative dielectric anisotropy has been reported. These materials show a minimum in response time at a sufficiently high field. We present results showing the dependency of this minimum upon spontaneous polarisation and the effect of AC bias. Calculations based upon the equation of motion of the director around the cone are presented which describe this effect and its dependence on the relative magnitudes of the spontaneous polarization and dielectric anisotropy of the material. Good agreement with the experimental results is found.     

Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures

We have characterized multidielectric scaled SONOS nonvolatile memory structures with the quasi-static linear voltage ramp (LVR) technique and dynamic pulse measurements. We have formulated physically-based ERASE/WRITE and retention methods with deep level amphoteric traps which capture and emit carriers to the bands in the silicon nitride film. Amphoteric trap parameters are extracted by the LVR technique. ERASE/WRITE and retention amphoteric trap model simulations agree well with the experimental dynamic pulse measurements. Experimental scaled SONOS structures have been fabricated with tunnel oxide X_OT=20 Å, nitride X_N=30 Å and blocking oxide X_OB=55 Å and demonstrated a static flatband shift of 3.6 V with ±5 V programming voltages. These structures may be used as the nonvolatile memory element in high density VLSI circuits.     

Global Parametric Sufficient Optimality Conditions for Semi-infinite Discrete Minmax Fractional Programming Problems Involving Generalized （η,ρ）-invex Functions

In this paper,we discuss a large number of sets of global parametric sufficient optimality condi-tions under various gcneralized (η,ρ)-invexity assumptions for a semi-infinite minmax fractional programmingproblem.     

Regular trends in distribution of substituted benzoic acids between organic solvents and water

The influence of physicochemical properties of organic solvents on the distribution constants of aromatic carboxylic acids between the organic and aqueous phases was examined.     

Relation between frobenius and 2-frobenius groups with order components of finite groups

IfG is a finite group, we define its prime graph Г(G), as follows: its vertices are the primes dividing the order ofG and two verticesp, q are joined by an edge, if there is an element inG of orderpq. We denote the set of all the connected components of the graph Г(G) by T(G)= {π_i(G), fori = 1,2, …,t(G)}, where t(G) is the number of connected components of Г(G). We also denote by π(n) the set of all primes dividingn, wheren is a natural number. Then ¦G¦ can be expressed as a product of m₁, m₂, …, m_t(G), where m_i’s are positive integers with π(m_i) = π_i. Thesem _i ’s are called the order components ofG. LetOC(G) := {m ₁,m ₂, …,m _t (G)} be the set of order components ofG. In this paper we prove that, if G is a finite group andOC(G) =OC(M), where M is a finite simple group witht(M) ≥ 2, thenG is neither Frobenius nor 2-Frobenius.