Model based online diagnosis of unbalance and transverse fatigue crack in rotor systems

A model based technique for online identification of malfunctions in rotor systems is discussed. Presence of fault changes the dynamic behavior of the system. This change is taken into account by equivalent loads acting on the undamaged system model. Equivalent loads are fictitious forces and moments acting on the undamaged system model, which generate a dynamic behavior identical to that of the real damaged system. The mathematical representation of equivalent loads is referred to as Fault Model. The work focuses on developing a fault model for a transverse fatigue crack in shaft and testing it through simulated studies. The basic principle of the technique is validated for unbalance identification, through numerical simulations as well as by experiments on a real rotor system.     

Special points for calculating integrals over the primitive cell of a periodic system

A method is proposed for constructing appropriate sets of special points in the Brillouin zone in which the extended unit cell method is used with a subsequent shift from the center of the reduced Brillouin zone. The proposed method offers several advantages over the commonly used Monkhorst-Pack method. The difference in the construction of sets of special points for the direct and reciprocal lattices is discussed for crystals belonging to a nonsymmorphic space group. The cases of a planar square lattice and an fcc lattice are considered to illustrate general results.     

Effect of lattice deformation and phase transitions on the electronic spectra of TlGaS<Subscript>2</Subscript>, TlGaSe<Subscript>2</Subscript>, and TlInS<Subscript>2</Subscript> layered semiconductors

The effect of the lattice deformation on the electronic spectra of TlGaS₂, TlGaSe₂, and TlInS₂ layered semiconductor crystals is analyzed. It is shown that changes in the band gap of these semiconductors due to thermal expansion and a change in the composition under hydrostatic or uniaxial pressure can be described within a unified model of the deformation potential. The main feature of this model is the inclusion of deformation potentials with different signs, which is characteristic of other semiconductors with a layered structure. An analysis of the lattice deformation of the studied semiconductors in terms of the proposed model of the deformation potential has revealed that, in the immediate vicinity of the phase transitions, the crystal lattice under pressure undergo an unusual deformation.     

The effect of high electric fields on the structure and dielectric properties of the B2 phase

Dielectric studies are presented of a banana-shaped compound that exhibits the antiferroelectric B₂ phase. Upon application and subsequent removal of strong electric fields the textures and dielectric properties of the phase drastically change. Most notable is the huge increase of the low frequency permittivity. This behaviour would suggest the induction of ferroelectricity by the electric field.     

Highly edge‐connected detachments of graphs and digraphs

Let G = (V,E) be a graph or digraph and r : V → Z₊. An r‐detachment of G is a graph H obtained by ‘splitting’ each vertex ν ∈ V into r(ν) vertices. The vertices ν₁,…,ν_r(ν) obtained by splitting ν are called the pieces of ν in H. Every edge uν ∈ E corresponds to an edge of H connecting some piece of u to some piece of ν. Crispin Nash‐Williams 9 gave necessary and sufficient conditions for a graph to have a k‐edge‐connected r‐detachment. He also solved the version where the degrees of all the pieces are specified. In this paper, we solve the same problems for directed graphs. We also give a simple and self‐contained new proof for the undirected result. © 2003 Wiley Periodicals, Inc. J Graph Theory 43: 67–77, 2003     

Fine and Wilf words for any periods

Let w = w₁ … w_n be a word of maximal length n, and with a maximal number of distinct letters for this length, such that w has periods p₁, …, p_n but not period gcd(p₁,…,p_r). We provide a fast algorithm to compute n and w. We show that w is uniquely determined apart from isomorphism and that it is a palindrome. Furthermore we give lower and upper bounds for n as explicit functions of p₁, …p_r. For r = 2 the exact value of n is due to Fine and Wilf. In case the number of distinct letters in the extremal word equals r a formula for n had been given by Castelli, Mignosi and Restivo in case r = 3 and by Justin if r > 3.     

Effect of Pressure on Fluid Damping in MEMS Torsional Resonators with Flow Ranging from Continuum to Molecular Regime

High quality factor of dynamic structures at micro and nano scale is exploited in various applications of micro electro-mechanical systems (MEMS) and nano electro-mechanical system. The quality factor of such devices can be very high in vacuum. However, when vacuum is not desirable or not possible, the tiny structures must vibrate in air or some other gas at pressure levels that may vary from atmospheric to low vacuum. The interaction of the surrounding fluid with the vibrating structure leads to dissipation, thus bringing down the quality factor. Depending on the ambient fluid pressure or the gap between the vibrating and the fixed structure, the fluid motion can range from continuum flow to molecular flow giving a wide range of dissipation. The relevant fluid flow characteristics are determined by the Knudsen number which is the ratio of the mean free path of the gas molecule to the characteristic flow length of the device. This number is very small for continuum flow and reasonably big for molecular flow. In this paper, we study the effect of fluid pressure on the quality factor by carrying out experiments on a MEMS device that consists of a double gimbaled torsional resonator. Such devices are commonly used in optical cross-connects and switches. We only vary fluid pressure to make the Knudsen number go through the entire range of continuum flow, slip flow, transition flow, and molecular flow. We experimentally determine the quality factor of the torsional resonator at different air pressures ranging from 760 Torr to 0.001 Torr. The variation of this pressure over six orders of magnitude ensures required rarefaction to range over all flow conditions. Finally, we get the variation of quality factor with pressure. The result indicates that the quality factor, Q, follows a power law, Q ∝P ^–r , with different values of the exponent r in different flow regimes. In the second part of the paper, we propose the use of effective viscosity for considering velocity slip conditions in solving Navier–Stokes equation numerically. This concept is validated with analytical results for a simple case and then compared with the experimental results presented in this paper. The study shows that the effective viscosity concept can be used effectively even for the molecular regime if the air-gap to length ratio is sufficiently small (h ₀/L<0.01). As this ratio increases, the range of validity decreases.     

Simulation of the instability of an accelerating gaseous envelope

The development of perturbations of the parameters of a dense gaseous envelope traveling with an acceleration driven by a difference in the pressures on either side is investigated numerically. Plane and axisymmetric time-dependent flows of a compressible medium are considered. The effect of both the density of the envelope and the form of the initial perturbations of its shape and motion on the mass cumulation in the compactions formed is studied. The evolutions of the perturbations of a layer and the surface of a contact discontinuity accelerated by an impinging plane shock wave are compared.