Controlling Metallophilic Interactions in Chiral Gold(I) Double Salts towards Excitation Wavelength‐Tunable Circularly Polarized Luminescence

Materials exhibiting excitation wavelength‐dependent photoluminescence (Ex‐De PL) in the visible region have potential applications in bioimaging, optoelectronics and anti‐counterfeiting. Two multifunctional, chiral [Au(NHC)₂][Au(CN)₂] (NHC=(4R,5R)/(4S,5S)‐1,3‐dimethyl‐4,5‐diphenyl‐4,5‐dihydro‐imidazolin‐2‐ylidene) complex double salts display Ex‐De circularly polarized luminescence (CPL) in doped polymer films and in ground powder. Emission maxima can be dynamically tuned from 440 to 530 nm by changing the excitation wavelength. The continuously tunable photoluminescence is proposed to originate from multiple emissive excited states as a result of the existence of varied Au^I???Au^I distances in ground state. The steric properties of the NHC ligand are crucial to the tuning of Au^I???Au^I distances. An anti‐counterfeiting application using these two salts is demonstrated.     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

Spin gapless semiconductor like Ti2MnAl film as a new candidate for spintronics application

A novel Heusler ferrimagnet Ti₂MnAl film has been grown on Si(001) substrate using magnetron sputtering. Characteristics of its magnetic and transport properties reveal the spin‐gapless‐semiconductor (SGS) nature of the stoichiometric Ti₂MnAl, in agreement with theoretical prediction. The as‐grown SGS‐like Ti₂MnAl film demonstrated high Curie temperature, nearly compensated ferrimagnetic properties with small coercivity and low magnetization. It also showed semiconductor‐like behavior at room temperature allowing good compatibility with commercial Si‐based semiconductor. In this regards, Ti₂MnAl film is a potential candidate material for spintronics application, especially for the minimization of energy consumption of device. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Large displacement analysis of shear deformable composite beams with interlayer slips

This paper presents a novel geometric non-linear finite element formulation for the analysis of shear deformable two-layer beams with interlayer slips. We adopt the co-rotational approach where the motion of the element is decomposed into two parts: a rigid body motion which defines a local coordinate system and a small deformational motion of the element relative to this local coordinate system. The main advantage of this approach is that the transformation matrices relating local and global quantities are independent to the choice of the geometrical linear local element. The effect of transverse shear deformation of the layers is taken into account by assuming that each layer behaves as a Timoshenko beam element. The layers are assumed to be continuously connected and partial interaction is considered by considering a continuous relationship between the interface shear flow and the corresponding slip. In order to avoid curvature and shear locking phenomena, the local linear element is formulated using “exact” displacement shape functions derived from the closed-form solution of the governing equations of a two-layer beam element. Finally, three numerical applications are presented in order to assess the performance of the proposed formulation.     

Inducing anisotropy in bulk Nd-Fe-Co-Al-B nanocrystalline alloys by quenching in magnetic field

We have observed magnetic anisotropy in bulk Nd_55−xCo_xFe₃₀Al₁₀B₅ (x=10, 15 and 20) alloys prepared by copper mold suction casting method with a presence of external magnetic field (quenching field) μ₀H=0.25 T. By changing direction of the measuring field from perpendicular to parallel one in comparison with that of the quenching field, coercive force of the alloys slightly decreases while remanent magnetization and squareness of hysteresis loop increase more clearly. It is also found that the higher Co-concentration in the alloys the larger magnetic anisotropy is induced. The structure analyses manifest nanocrystalline particles embedded in residual amorphous matrix of the alloys. The size of the particles is in range of 10-30 nm and their crystalline phases consist of Nd₂(Fe,Co)₁₄B, Nd₃Co, Nd₃Al, NdAl₂ and Nd.     

Inclusion of SWCNTs in Nb/Pt co-doped TiO2 thin-film sensor for ethanol vapor detection

Nb-Pt co-doped TiO₂ and the hybrid SWCNTs/Nb-Pt co-doped TiO₂ thin films have been prepared by the sol–gel spin-coating process for gas-sensor fabrication. Field emission scanning electron microscope (FE-SEM, TEM and X-ray diffraction (XRD) characterizations indicated that the SWCNTs inclusion did not affect the morphology of the TiO₂ thin film and the particle size. Additionally, the SWCNTs were well embedded in the TiO₂ matrix. The gas-sensing properties of Nb–Pt co-doped TiO₂ thin films with and without SWCNTs inclusion were investigated. The hybrid sensors with the inclusion of different SWCNTs contents are examined to elucidate the effect of SWCNTs content on the gas-sensing properties. Experimental results revealed that the responses to ethanol of Nb–Pt co-doped TiO₂ sensors with SWNCTs inclusion increase by factors of 2–5 depending on the operating temperature and the ethanol concentration, compared to that of the sensor without SWCNTs inclusion. Moreover, all hybrid sensors can operate with high sensitivity and stability at a relatively low operating temperature (<335 °C). The responses of the hybrid sensors are greatly affected by SWCNTs content inclusion. The optimized SWCNTs content of 0.01% by weight was obtained for our experiment. The improved gas-sensing performance should be attributed to the additional formation of the p/n junction between SWCNTs (p-type) and TiO₂ (n-type).