Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask.Transmission electron microscopy,scanning electron microscopy,and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth.The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer,resulting in the window region shrinking from a rectangle to a "black hole".Furthermore,strong yellow luminescence(YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence,suggesting that C-involved defects are responsible for the YL.     

采用单边大光腔结构改善电吸收调制器的光场分布

设计并制备了具有单边大光腔结构的半导体电吸收(electroabsorption，EA)调制器.模拟和测试的结果均表明：单边大光腔结构能有效地改善EA调制器的光场分布，使椭圆形的近场光斑变得圆形化，从而达到与圆形模式光纤之间的匹配，有利于提高耦合效率.     

γ-LiAlO2上非极性ZnO薄膜制备及其光谱性质研究

利用激光脉冲沉积(PLD)技术在(302)γ-LiAlO₂衬底上成功生长了非极性的a面(1120) ZnO薄膜. 衬底温度为350℃时，薄膜是混合取向(a向和c向)，以c面ZnO为主，且晶粒尺寸分布很宽；提高温度达500℃，薄膜变为单一的(1120)取向，摇摆曲线半高宽0.65°，晶粒尺寸分布趋窄，利用偏振透射谱可以明显看出其面内的各向异性. 衬底温度650℃下制备的样品晶粒继续长大，虽然摇摆曲线半高宽变大，但光致发光谱(PL)带边发射峰半高宽仅为105meV，比在350℃，500℃下制备的样品小1/5. 关键词： 非极性ZnO 2')" href="#">γ-LiAlO₂ PLD 透射谱     

超导故障限流器的研究现状及其应用

超导故障限流器(Superconducting Fault Current Limiter,SFCL)是利用超导体的基本特性,有效限制电力系统故障短路电流,提高电网安全性和稳定性的一种新型电力设备。文中在综合大量文献的基础上,对超导故障限流器进行了一种较为系统的分类。基于该种分类,结合目前国内外的研究现状,就电阻型、磁屏蔽型、饱和铁芯电抗器型、桥路型SFCL的工作原理作了详细的分析介绍,还给出了它们在电力系统中的安装位置。最后,对超导故障限流器的研究中存在的问题及其发展趋势做了说明。     

基于LabVIEW的超导磁体数采与测控系统研究

根据研制的大口径、高场强的超导强磁装置的特点,选择基于LabVIEW的数据采集和测控系统。低温传感器共六支,分别安装于磁体氦槽和冷屏不同位置,其中碳电阻温度计Cernox三支,铂电阻温度计Pt100两支、Pt1000一只,用于监测磁体温度;超导氦液面计一个,用于监测氦液面高度;根据磁体参数匹配研制了一套可调励磁速率的磁体专用直流电源及其失超保护系统,保证磁体安全运行。所有数据通过NI公司内插DAQ6251数据采集卡的PX I采集,用LabVIEW编写数据采集程序和人机界面。     

Optical potential analysis of proton elastic scattering from <Superscript>12</Superscript>C based on the <Emphasis Type="Italic">α</Emphasis>-particle model

Based on an α-particle model of ¹²C, an optical potential for intermediate-energy proton- ¹²C scattering is presented in the framework of the KMT theory. The parameterized proton- ⁴He amplitude, the required basic input for constructing the optical potential, is obtained by fitting the proton- ⁴He scattering data. The differential cross-sections and analyzing powers of the proton- ¹²C elastic scattering at incident energies ranging from 0.2 to 1.0GeV have been calculated by using the obtained optical potential. The main features of the measured angular distributions of the cross-section and the analyzing power can be satisfactorily described. The proton- ¹²C total cross-sections have also been calculated, and the results are in good agreement with the experimental data at energies below 0.6GeV but underestimate the data about 6% at higher energies.     

The structure and dynamics of water inside armchair carbon nanotube

In this paper we present some simulation results about the behaviour of water molecules inside a single wall carbon nanotube (SWNT). We find that the confinement of water in an SWNT can induce a wave-like pattern distribution along the channel axis, similar phenomena are also observed in biological water channels. Carbon nanotubes(CNTs) can serve as simple nonpolar water channels. Molecular transport through narrow CNTs is highly collective because of tight hydrogen bonds in the protective environment of the pore. The hydrogen bond net is important for proton and other signal transports. The average dipoles of water molecules inside CNTs (7,7), (8,8) and (9,9) are discussed in detail. Simulation results indicate that the states of dipole are affected by the diameter of SWNT. The number of hydrogen bonds, the water--water interaction and water--CNT interaction are also studied in this paper.     

Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane （TMDSO） ratio and input power in radio frequency （RF） plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate （WVTR）, oxygen transmission rate （OTR）, and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2：1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier （WVTR and OTR） properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.