全文获取类型
收费全文 | 16162篇 |
免费 | 2892篇 |
国内免费 | 1852篇 |
专业分类
化学 | 11470篇 |
晶体学 | 164篇 |
力学 | 1184篇 |
综合类 | 72篇 |
数学 | 1664篇 |
物理学 | 6352篇 |
出版年
2024年 | 56篇 |
2023年 | 353篇 |
2022年 | 608篇 |
2021年 | 588篇 |
2020年 | 645篇 |
2019年 | 604篇 |
2018年 | 561篇 |
2017年 | 503篇 |
2016年 | 867篇 |
2015年 | 764篇 |
2014年 | 962篇 |
2013年 | 1169篇 |
2012年 | 1490篇 |
2011年 | 1458篇 |
2010年 | 988篇 |
2009年 | 934篇 |
2008年 | 1085篇 |
2007年 | 952篇 |
2006年 | 864篇 |
2005年 | 765篇 |
2004年 | 537篇 |
2003年 | 438篇 |
2002年 | 431篇 |
2001年 | 354篇 |
2000年 | 308篇 |
1999年 | 333篇 |
1998年 | 275篇 |
1997年 | 247篇 |
1996年 | 273篇 |
1995年 | 271篇 |
1994年 | 194篇 |
1993年 | 150篇 |
1992年 | 155篇 |
1991年 | 145篇 |
1990年 | 128篇 |
1989年 | 102篇 |
1988年 | 86篇 |
1987年 | 67篇 |
1986年 | 50篇 |
1985年 | 41篇 |
1984年 | 30篇 |
1983年 | 25篇 |
1982年 | 14篇 |
1981年 | 16篇 |
1980年 | 9篇 |
1979年 | 1篇 |
1978年 | 2篇 |
1972年 | 1篇 |
1957年 | 7篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
21.
22.
针对VO2薄膜在微测辐射热计上的应用,采用射频反应溅射法,在室温下制备氧化钒薄膜;研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压,先获得成分接近VO2的非晶化薄膜,再在400℃空气中氧化退火,便可制得高电阻温度系数,低电阻率的VO2薄膜,电阻温度系数约为-4%/℃,薄膜方块电阻为R□为100—300kΩ;薄膜在室温下沉积,400℃下退火的制备方法与微机电加工(micro electromechanic
关键词:
二氧化钒
电阻温度系数
氧分压
射频反应溅射法 相似文献
23.
24.
Guofen Yu Yuanci Gao Shenggang Liu Wenxiang Wang Jin Wu 《International Journal of Infrared and Millimeter Waves》2002,23(8):1261-1269
Analysis of the field distributions in a single biological cell under electromagnetic wave is given. With Debye approximation, the dielectric relaxation of each part of the cell, including the extracellular and cellular media, the cell membrane and the nuclear membrane, was taken into account. Making use of some typical parameters for a cell, the voltage across nuclear and cytoplasma membranes under electromagnetic waves are calculated up to millimeter wave frequency range. The calculated result indicates that it is unlikely to generate electroporation by present available millimeter wave sources. 相似文献
25.
The existence and uniqueness of classical global solutions to a type of Boussinesq equations with initial and boundary values are studied in this paper. The existence of such solutions is proved by means of compactness theorem and Schauders fixed point theorem, and its uniqueness by the so called energy method.Projects Supported by the Science Fund of the Chinese Academy of Sciences. 相似文献
26.
Weidong Gao Meiqiong Zhan Shuhai Fan Janda Shao Zheng-Xiu Fan 《Applied Surface Science》2005,250(1-4):195-202
The laser-induced damage (LID) behavior of narrow-band interference filters was investigated with a Nd:YAG laser at 1064 nm under single-pulse mode and free-running mode. The absorption measurement of such coatings was performed with surface thermal lensing (STL) technique. The damage morphologies under the two different laser modes were also studied in detail. It was found that all the filters exhibited a pass-band-center-dependent absorption and laser-induced damage threshold (LIDT) behavior, but the damage morphologies were diverse. The explanation was given with the analysis of the electric field distribution and the operational behavior of the irradiation laser. 相似文献
27.
Hong-Wen Gao 《Journal of Analytical Chemistry》2003,58(4):328-332
The reactions between Cu(II) and picramine CA (PCA) and Al(III) and PCA were both sensitive at pH 7. The competition coordination between Cu and the Al–PCA complex was applied to the selective determination of Cu (CCSD) by the spectral correction technique. Results have shown that the complexes formed at pH 7 are Al2(PCA) and Cu(PCA)3, their cumulative stability constants are 4.43 × 105 and 2.08 × 1015, respectively, and their real molar absorptivities are 5.78 × 103 at 650 nm and 3.19 × 104at 530 nm. At the analysis of the samples, the relative standard deviation (RSD) was 5.0% and the recovery rate of Cu was between 94 and 108%. 相似文献
28.
Deposition of Hydrogen-Free Silicon Nitride Thin Films by Microwave ECR plasma Enhanced Magnetron Sputtering at Room Temperature
下载免费PDF全文
![点击此处可从《中国物理快报》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Hydrogen-free silicon nitride (SiNx) films were deposited at room temperature by microwave electron cyclotron resonance (MW-ECR) plasma enhanced unbalance magnetron sputtering system. Both Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy are used to study the bonding type and the change of bonding structures of the silicon nitride films. The results indicate that the chemical structure and composition of SiNx films deposited by this technique depend strongly on the N2 flow rates, the stoichiometric SiNx film, which has the highest hardness of 22.9 GPa, could be obtained at lower N2 flow rate of 4 sccm. 相似文献
29.
使用结构简单的单温炉设备,通过三步升温热解二茂铁、三聚氰氨混合物方法,在二氧化硅、多晶陶瓷基底上分别合成了碳纳米管阵列、碳纳米管捆束.使用扫描电子显微镜、透射电子显微镜、电子能量损失谱和x射线光电子能谱对合成样品进行了结构和成分分析.结果显示:两种基底上合成的纳米管均为多壁纯碳管;生长于光滑二氧化硅表面的碳纳米管具有高度取向性和一致的外径,长度为10—40μm.碳纳米管采取催化剂顶端生长模式并展示出类杯状形貌;生长于粗糙多晶陶瓷表面的碳纳米管捆束随机取向,碳纳米管直径为15—80nm,长度在几百微米,展示
关键词:
碳纳米管
热解法
三步升温工艺 相似文献
30.