Copolymerization of styrene and norbornene with β‐diketiminato nickel/methylaluminoxane catalytic system

Styrene–norbornene (S‐N) copolymerizations were carried out using β‐diketiminato nickel complexes CH{C(CF₃)NAr}₂NiBr (Ar = 2,6‐ⁱPr₂C₆H₃, 1 ; Ar = 2,6‐Me₂C₆H₃, 2 ) in the presence of methylaluminoxane. The influence of the comonomer feed content and polymerization temperature on the conversion and composition of the copolymers with the catalytic system was investigated. An increase in the feed ratio of S/N led to an increase in the incorporated styrene content of the resulting copolymer. NMR characterization of the copolymers generated with the catalytic systems showed that the random S‐N copolymers are produced. Differential scanning calorimetric determination of the copolymers shows higher T_g values than polystyrene, and gel permeation chromatographic measurements have shown that the copolymers possess rather narrow molecular weight distributions, suggesting that the copolymerization take place at a single active site. Copyright © 2012 John Wiley & Sons, Ltd.     

热爆炸临界参数的数值解法

本文提出的热爆炸临界参数的数值解法是一种变分方法.这种方法依据的是文献[1]给出的热爆炸临界参数的一个变分原理。数值计算的结果表明,这种方法是一种简便、经济而又精确度较高的方法。     

高压下Pd82Si18合金凝固过程中形成的亚稳相

 使用X射线衍射、差热分析、透射电镜及Ｘ射线能谱分析，研究了Pd₈₂Si₁₈合金在高压下的凝固特点及所形成的相的结构和稳定性。在5.5 GPa压力下以100 K/s的冷却速率淬火，得到了面心立方结构钯硅固溶体（MS-Ⅰ），其点阵常数为a=0.388 3 nm。与钯硅固溶体共存的还有另一未知结构亚稳相（MS-Ⅱ）。在700 K时上述亚稳相转变成平衡相Pd+Pd₃Si。     

锯齿型与扶手椅型碳化硅纳米管光电性质第一性原理研究

本文基于密度泛函理论计算分析了手性参数为(17,0)、(20,0)、(26,0) (10,10)、(12,12)、(15,15)的碳化硅纳米管的能带图,态密度及主要光学性质。结果表明：锯齿型与扶手椅型碳化硅纳米管均具有明显的半导体性质;在相近直径下,扶手椅型碳化硅纳米管带隙宽度要大于锯齿型碳化硅纳米管的带隙宽度;碳化硅纳米管的光吸收峰在100nm~200nm之间,可用于制作紫外线探测器件。     

剪切形变下掺杂及缺陷对MoS2电子结构的影响

本文利用密度泛函理论,研究剪切形变下掺杂改性及不同类型缺陷对MoS2电子结构的影响。发现：剪切形变下,MoS2+P体系为相对最稳定的结构,掺杂改性相较于缺陷对模型稳定性影响更小;模型MoS2+P+Se中P-Mo键易形成共价键,而其中的Se-Mo键和MoS2+P-Mo-S模型中的P-Mo键,易形成离子键;掺杂使MoS2模型能隙变大,而缺陷使能隙减小,且S和Mo原子共缺陷的模型带隙为0;缺陷相较于掺杂改性模型,更能使Mo原子周围增加电荷聚集度,带隙值更低,更能影响或调控模型的电子结构。     

钾原子中多种受激辐射参与的混频过程

当双原子共振激发钾原子于６Ｓ能级时,由光泵受激辐射和电离复合受激辐射参与的六波或四波混频,产生了位于紫外和紫区的诸多相干辐射、文中对多种混频机制进行了分析和讨论,并对所测得的相干辐射线进行了标识．     

Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

Using the technology computer-aided design three-dimensional simulation, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive to the dynamic voltage scaling and subthreshold circuits radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in the supply voltage variation.     

密集阵高功率微波空间功率合成

对基于矩形阵列的高功率微波二维密集阵阵列合成进行了研究。仿真分析了均匀矩形栅格阵列的远场方向图,结果表明采用密集阵可以实现高效的、具有确定主波束的空间功率合成。并分析了阵元间距及阵元初相位对阵列空间功率合成的影响,结果表明:阵元间距越小,栅瓣越少,主波束宽度越宽,具有确定主波束的临界距离越小;当目标高度超过阵临界距离时,阵元初相位相差越小合成效率越高,阵列初相位分布范围超过/2时,阵列得不到确定的主波束,进行阵列设计时应充分考虑阵元间距及初相位对阵列合成的影响。